Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing
decaborane and other heat-sensitive materials via a novel
vaporizer and vapor
delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g.
decaborane, into the
ion source; Ionizing the
decaborane into a large fraction of B10Hx+; Preventing
thermal dissociation of decaborane; Limiting charge-exchange and low energy
electron-induced fragmentation of B10Hx+; Operating the
ion source without an arc
plasma, which can improve the emittance properties and the purity of the beam; Operating the
ion source without use of a strong applied
magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce
electron impact ionizations without the use of an arc
discharge, by incorporation of an externally generated, broad directional
electron beam which is aligned to pass through the
ionization chamber to a thermally isolated
beam dump; Providing production-worthy dosage rates of
boron dopant at the
wafer; Providing a hardware design that enables use also with other dopants, especially using novel
hydride,
dimer-containing, and
indium- or
antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion
optics requirements of the
installed base of ion implanters in the field; Eliminating the
ion source as a source of transition metals
contamination, by using an external and preferably remote
cathode and providing an
ionization chamber and extraction aperture fabricated of non-contaminating material, e.g.
graphite,
silicon carbide or aluminum; Enabling retrofit of the new
ion source into the
ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a
control system in retrofit installations that enables retention of the installed
operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the
solid within the
vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which
ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of
semiconductor devices and especially
CMOS source / drains and extensions, and
doping of
silicon gates.