Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

51results about How to "Increase dose rate" patented technology

Method for manufacturing ultrafine powder from polytetrafluoroethylene through irradiation cracking

InactiveCN102672968AHigh powerHigh radiation processing efficiencyGrain treatmentsAirflowPolytetrafluoroethylene
The invention discloses a method for manufacturing ultrafine powder from polytetrafluoroethylene through irradiation cracking. The method is characterized in that polytetrafluoroethylene raw materials are dried; the dried polytetrafluoroethylene raw materials are subjected to low-temperature cold treatment by liquid nitrogen; the polytetrafluoroethylene raw materials subjected to the low-temperature treatment are crushed into powder materials with the particle diameter being 100-1000mum by a crushing machine; the powder materials are subjected to sealed package under the gas protection effect; the packed powder materials are placed into an electronic accelerator irradiation system for irradiation cracking; and the irradiated powder materials pass through an air flow crushing machine to be subjected to air flow crushing and grading, and the ultrafine polytetrafluoroethylene powder with the particle diameter reaching 0.2-3mum is obtained. The method has the characteristics that the preparation process is simple, the control is easy, the energy consumption is low, the process continuous degree is high, the product performance is stable, the prepared ultrafine polytetrafluoroethylene powder has the characteristics that the dispersibility is good, and the agglomeration cannot easily occur. The prepared ultrafine polytetrafluoroethylene powder can be widely applied to the fields of paint, ink, dray powder lubricating agents and space flight and aviation appliances, and the material performance is obviously improved.
Owner:四川久远科技股份有限公司

Ion implantation device and a method of semiconductor manufacturing by the implantation of ions derived from carborane molecular species

InactiveUS20080305598A1High doseLow-energy implantTransistorElectric discharge tubesImpact ionizationHigh doses
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized carborane cluster ions are implanted into semiconductor substrates to perform doping of the substrate. The carborane cluster ions have the chemical form C2B10Hx+, C2B8Hx+ and C4B18Hx+and are formed from carborane cluster molecules of the form C2B10H12 ,C2B8H10 and C4B18H22 The use of such carborane molecular clusters results in higher doping concentrations at lower implant energy to provide high dose low energy implants. In accordance with one aspect of the invention, the carborane cluster molecules may be ionized by direct electron impact ionization or by way of a plasma.
Owner:SEMEQUIP

Particle beam irradiation system and operating method

The operation control data about the component device constituting the synchrotron 13 are structured to include an initial acceleration control data item, a plural extraction control data items, a plural energy change control data items that connect the plural extraction control data items. The plural extraction control data items include extraction condition setting data items and extraction condition cancellation data items corresponding to the plural extraction control data items. As a result, a particle beam irradiation system capable of controlling changes in beam energy, updating operation cycle, and extracting beam in a short time can be provided.
Owner:HITACHI LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products