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4513results about "Chemical conversion by chemical reaction" patented technology

Testing apparatus using charged particles and device manufacturing method using the testing apparatus

A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25••1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.
Owner:EBARA CORP

Method for supplying gas with flow rate gradient over substrate

A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction.
Owner:ASM IP HLDG BV

UV light irradiating apparatus with liquid filter

A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.
Owner:ASM JAPAN

UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations

A UV irradiation apparatus for treating substrates includes: at least two process stations each provided with a UV transmissive window; at least one electric UV lamp using two electrodes in a gas tube extending over the UV transmissive windows of the process stations aligned along the gas tube and shared by the process stations; a UV transmissive zone disposed between the UV lamp and the process stations and provided with reflectors; and shutters for blocking UV light from being transmitted to the respective process stations independently.
Owner:ASM JAPAN

Electron beam exciter for use in chemical analysis in processing systems

ActiveUS20100032587A1Disparity will become so greatHigh electron energyCathode ray tubes/electron beam tubesRadiation therapyElectron sourceFluorescence
The present invention is directed to a gas line electron beam exciter, gas line electron beam excitation system and method for exciting a gas using an electron beam exciter. The electron beam exciter generally comprises a variable density electron source for generating a cloud of electrons in an electron chamber and a variable energy electron extractor for accelerating electrons from the electron chamber as an electron beam and into an effluent stream for fluorescing species in the effluent. The electron density of the electron beam is variably controlled by adjusting the excitation power applied to the variable density electron source. The electrons in the electron chamber reside at a reference electrical potential of the chamber, typically near ground electrical potential. The electron energy of the electron beam is variably controlled by adjusting an electrical potential across the variable energy electron extractor, which energizes the electrons through an extraction hole of the chamber and toward the extractor. The greater the difference in the electrical potential between the electron extractor and the electron source, the higher the energy imparted to the electrons in the electron beam. The excitation power applied to the electron source can be adjusted independently from the electron energy of the electron beam, thereby altering the electron density of the electron beam without changing the energy level of the electrons of the electron beam.
Owner:VERITY INSTR +1

Dielectric material treatment system and method of operating

A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.
Owner:TOKYO ELECTRON LTD

Technique for low-temperature ion implantation

A technique for low-temperature ion implantation is disclosed. In one particular exemplary embodiment, the technique may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a pre-chill station located in proximity to an end station in an ion implanter. The apparatus may also comprise a cooling mechanism within the pre-chill station. The apparatus may further comprise a loading assembly coupled to the pre-chill station and the end station. The apparatus may additionally comprise a controller in communication with the loading assembly and the cooling mechanism to coordinate loading a wafer into the pre-chill station, cooling the wafer down to a predetermined temperature range, and loading the cooled wafer into the end station where the cooled wafer undergoes an ion implantation process.
Owner:VARIAN SEMICON EQUIP ASSOC INC

Apparatus for generating a plurality of beamlets

The invention relates to an apparatus for generating a plurality of charged particle beamlets, comprising a charged particle source for generating a diverging charged particle beam, a converging means for refracting said diverging charged particle beam and a lens array comprising a plurality of lenses, wherein said lens array is located between said charged particle source and said converging means.In this way, it is possible to reduce aberrations of the converging means.
Owner:ASML NETHERLANDS BV

Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same

A photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufactured with the photomask are disclosed. The photomask includes a substrate and a patterned layer formed on at least a portion of the substrate. The patterned layer may be formed using a mask pattern file created by analyzing a pattern in a mask layout file to identify a region including an antenna ratio less than a first design rule. A feature located in the identified region is moved based on a second design rule from a first position to a second position in the mask layout file to create a space in the identified region. A grounding feature is placed in the space and automatically connected to a gate feature in the mask layout file such that the antenna ratio is increased to greater than or approximately equal to the first design rule.
Owner:CELERICS TECH

Method for treating a target volume with a particle beam and device implementing same

The invention concerns a method for treating a target volume with a particle beam, in particular a proton beam, which consists in generating said particle beam using an accelerator and in producing from said beam a narrow spot directed towards the target volume, characterized in that said spot sweeping speed and the particle beam intensity are simultaneously varied.
Owner:ION BEAM APPL

Charged particle beamlet exposure system

The invention relates to a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising:a first aperture means comprising at least a first substantially round aperture for partially shielding an emitted charged particle beam for forming a charged particle beamlet;a lens system comprising at least one lens for focussing a charged particle beamlet from said first aperture within or in the vicinity of an image focal plane of said lens;a deflector means, substantially located in said image focal plane, comprising at least one beamlet deflector for the deflection of a passing charged particle beamlet upon the reception of a control signal, anda second aperture means comprising at least one second substantially round aperture positioned in the conjugate plane of the first aperture, and said second aperture being aligned with said first aperture and said beamlet deflector for blocking said charged particle beamlet upon deflection by said beamlet deflector and to transmit it otherwise.
Owner:ASML NETHERLANDS BV

Neutral particle beam processing apparatus

A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), an orifice electrode (5) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (4) disposed upstream of the orifice electrode (5) in the vacuum chamber (3). The orifice electrode (5) has orifices (5a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (5) and the grid electrode (4) via a dielectric (5b) to extract positive ions from the plasma generated by the plasma generator and pass the extracted positive ions through the orifices (5a) in the orifice electrode (5).
Owner:ASM IP HLDG BV

Resonant chamber applicator for remote plasma source

An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.
Owner:APPLIED MATERIALS INC

Ultraviolet ray generator, ultraviolet ray irradiation processing apparatus, and semiconductor manufacturing system

The present invention relates to an ultraviolet ray generator 101, and the generator 101 has an ultraviolet ray lamp 1, a protective tube 2 being made of a material which is transparent with respect to ultraviolet ray and housing the ultraviolet ray lamp 1, and gas introduction port 6a introducing nitrogen gas or inert gas into the protective tube 2.
Owner:NAT INST OF ADVANCED IND SCI & TECH +1

Method for providing a fill pattern for an integrated circuit design

A method for providing a fill pattern for integrated circuit designs is disclosed. A keepout file having keepout data is generated from a chip design layout file having chip design layout data. The keepout file includes a map of areas of an integrated circuit design where fill patterns cannot be placed. The map of areas from the keepout file is then overlaid with a fill pattern to yield a fill-pattern file. Fill patterns from the fill-pattern file is removed from locations that coincide with locations as defined by the keepout data to yield a final-fill file with crucial fill pattern data. The crucial fill pattern data from the final-fill file is overlaid on the design layout data in the chip design layout file to yield a complete design layout file. Finally, the design rule integrity and logical to physical correspondence of the complete design layout file is verified.
Owner:MIND FUSION LLC

Charged particle therapy system, range modulation wheel device, and method of installing range modulation wheel device

The invention provides a charged particle therapy system capable of increasing the number of patients treated. An irradiation filed forming apparatus for irradiating a charged particle beam extracted from a charged particle beam generator to an irradiation target includes an RMW device. The RMW device comprises a housing and an RMW disposed within the housing. A rotary shaft of the RMW is rotatably mounted to the housing. The RMW device is detachably installed in an RMW holding member provided in a casing of the irradiation filed forming apparatus. The housing can be placed in contact with the RMW holding member, and hence positioning of the rotary shaft of the RMW to a predetermined position can be performed in a short time. This contributes to cutting a time required for treatment per patient and increasing the number of patients treated.
Owner:HITACHI LTD

Particle therapy system

A particle therapy system is provided which can simply and quickly correct a beam orbit. In a particle therapy system provided with an irradiation facility comprising a first beam transport system for receiving a beam and transporting the beam to the patient side, and an irradiation nozzle for forming an irradiation field of the beam, the particle therapy system comprises first beam position monitors for detecting a position upstream of the irradiation nozzle at which the beam passes, second beam position monitors for detecting a position downstream of the irradiation nozzle at which the charged-particle beam passes, and first and second steering magnets. Correction bending amounts for causing the beam to be coincident with a predetermined orbit after the correction are determined in accordance with detected results from the first and second beam position monitors, and first and second steering magnets are excited under control so that the determined correction bending amounts are obtained.
Owner:HITACHI LTD

System for the Delivery of Proton Therapy

A process for an intensity-modulated proton therapy of a predetermined volume within an object includes discretising the predetermined volume into a number of iso-energy layers each corresponding to a determined energy of the proton beam. A final target dose distribution is determined for each iso-energy layer. The final target dose distribution or at least a predetermined part of this final target dose distribution is applied by parallel beam scanning by controlling the respective beam sweepers, thereby scanning one iso-energy layer after the other using an intensity-modulated proton beam while scanning a predetermined iso-energy layer.
Owner:PAUL SCHERRER INSTITUT

Charged particle beam irradiation system

A charged particle beam irradiation system comprises a high-speed steerer (beam dump device) 100 disposed in a course of a beam transport line 4 through which an ion beam is extracted from a charged-particle beam generator 1. The beam dump device 100 is provided with dose monitoring devices 105, 106 for measuring a dose of an ion beam applied to a beam dump 104 so that the intensity of the ion beam can be measured without transporting the ion beam to irradiation nozzles 15A through 15D. Thus, the system is capable of adjusting the intensity of an ion beam extracted from a synchrotron without operating each component of a beam transport line, and an irradiation nozzle.
Owner:HITACHI LTD

Radiation treatment plan making system and method

A radiation exposure region to be irradiated with particle beams and a peripheral region thereof are respectively divided into pluralities of exposure regions, radiation treatment simulation for applying particle beams according to the shape of each divided exposure region is performed, and a radiation treatment condition is obtained for causing the flatness of the radiation exposure region to be in a desired range, and a dose of particle beams applied to the unit exposure region of the peripheral region to be minimum. Thus, the problem of low efficiency of radiation is solved.
Owner:MITSUBISHI ELECTRIC CORP
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