2468results about How to "Reduced dimension" patented technology

There is disclosed herein a tube of material (1) having a seam (12) extending between a proximal end and a distal end, two edges (10a, 10b) of the material meeting and at least partially overlapping along the seam (12) and being sewn together at the seam by stitches (21, 22, 24) of relatively flexible thread (20), the thread of one or more of the stitches (22, 24) passing from a first side (12a) of the overlapped edges (10a, 10b) of material, through both layers of overlapped material, crossing a relatively rigid member (30) which is disposed on a second, opposite side (12b) of the overlapped edges of material, and passing back to the first side (12a). There is further disclosed an implant delivery catheter (40) incorporating the tube of material (1), and associated methods for its manufacture.

A firing system for an applicator instrument adapted to dispense surgical fasteners includes a housing, an elongated shaft extending from the housing, a firing rod disposed within the elongated shaft, a firing rod release engageable with the firing rod for preventing distal movement of the firing rod during at least one stage of a firing cycle, a trigger mounted to the housing, and a firing spring having a first end connected with the firing rod and a second end adapted for being sequentially coupled and decoupled from the trigger during the firing cycle. The firing cycle includes an initial stage in which the trigger is open and decoupled from the energy storing element, and the firing spring is at least partially compressed, and a piloting stage during which the firing rod release is disengaged from the firing rod for enabling distal movement of the firing rod.

Non-volatile memory cells store a level of charge corresponding to the data being stored in a dielectric material storage element that is sandwiched between a control gate and the semiconductor substrate surface over channel regions of the memory cells. More than two memory states are provided by one of more than two levels of charge being stored in a common region of the dielectric material. More than one such common region may be included in each cell. In one form, two such regions are provided adjacent source and drain diffusions in a cell that also includes a select transistor positioned between them. In another form, NAND arrays of strings of memory cells store charge in regions of a dielectric layer sandwiched between word lines and the semiconductor substrate.

A compression anastomosis ring (CAR) assembly for use in joining severed organ wall portions of a hollow organ. The assembly comprises a first portion which includes an anvil assembly and a second portion which comprises a bottom ring, at least one ring element, and at least one spring element formed of a shape-memory alloy. The at least one spring element provides a restorative force and is in compressive force contact with the bottom ring and the tissue to be joined is positioned between the anvil ring and the bottom ring. A plurality of needles on one of the ring elements is operative, upon application of a closure force, to pierce the tissue and the anvil ring, holding the anvil ring to the second portion of the CAR assembly. An applicator for applying the CAR assembly and a method for using the assembly and applicator are taught.

A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. The first electrode has a circumferential extending shape, such as an annular shape, surrounding an inner wall of the contact structure. The second electrode is located within an interior of the circumferential extending shape and separated from the first electrode by an insulating material. A resistance memory bridge is in contact with an edge surface of the first and second electrodes. The first electrode in the contact structure is connected to a transistor and the second electrode in the contact structure is connected to a bit line. A bit line is connected to the second electrode by a self-aligning process.

The present invention provides implantable devices and associated methods for interconnecting human vessels in a side-to-side or an end-to-side arrangement rapidly, safely and in a minimally invasive manner. The devices comprise a vessel connector and a intravascular support mechanism for establishing fluid communication between two vessels. Certain embodiments further include a sealing member for further sealing the openings in the vessels created for inserting the subject devices.

A process for fabrication of a semiconductor device including a modified ONO structure, comprising forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first oxide layer; and forming a top oxide layer on the layer comprising a high-K dielectric material. The semiconductor device may be, e.g., a MIRRORBIT(TM) two-bit EEPROM device or a floating gate flash device including a modified ONO structure.

Sensor arrangement having row and column lines arranged in first and second directions, respectively, sensor arrays arranged in crossover regions of the row and column lines, a detector, and a decoding device. The sensor arrays have a coupling device for electrically coupling respective row and column lines, and a sensor element to influence electric current flow through the coupling device. The detector is electrically coupled to a respective end section of at least a portion of the row and column lines, and detects a respective accumulative current flow from the individual electrical current flows provided by the sensor arrays of the respective lines. The decoding device is coupled to the row and column lines, and evaluates at least a portion of the accumulative electric current flows fed to the decoding device via the row and column lines to determine at which of the sensor elements a sensor signal is present.