704 results about "Plasma reaction" patented technology

A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film.

A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.

Spiral coils generate very powerful electromagnetic fields by operating with two different but simultaneous resonant behaviors. Quarter-wave resonance is established by adjusting the frequency (and wavelength) of a radiofrequency (RF) voltage source until the length of the spiral conductor is equal to ¼ of the wavelength of the alternating voltage. This generates an electromagnetic standing wave with at least one peak node and at least one null node. Inductive-capacitive (L / C) resonance is established by optimizing the thickness and width of the wire ribbon used to make the spiral coil. When inductance and capacitance are balanced, the current response will synchronize with the voltage input, creating in-phase behavior, minimal total impedance, and maximal power output. If two such coils are placed near each other, they will create an extremely powerful electromagnetic field between them, which can promote chemical and plasma reactions involving charged particles such as ions or plasma particles, possibly including nuclear fusion reactions.

An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils.

A method for manufacturing powders of oxides in a nanometer level through a direct current plasma thermal reaction is disclosed. The energy required is provided by the plasma that is generated in the non-transferred DC plasma apparatus. Once the solid precursors are introduced into the plasma, the solid precursors are vaporized and oxidized in the plasma reaction region of the non-transferred DC plasma apparatus continuously. Then, the oxide powders in a nanometer scale can form homogeneously and continuously. By controlling the nozzle size, the speed of the plasma can be adjusted and the coarsening and agglomeration of the nanopowders can be effectively prevented. Finally, oxide nanopowders of high-purity and high-dispersity are obtained by cooling down the plasma gas containing the vaporized and oxidized precursor through a vortical cooling-gas.