Plasma etching device

Abstract

A plasma etching device is provided. The device includes a chamber, a cathode assembly, and an integral cathode liner. The chamber provides a plasma reaction space. The cathode assembly is positioned at an inner and central part of the chamber and supports a substrate. The integral cathode liner has a plurality of first vents and second vents formed at two levels and spaced apart respectively such that the uniformity of a gas flow and exhaust flow within the chamber is maintained, and is outer inserted to the cathode assembly and coupled at its lower end part to an inner surface of the chamber.

Description

CROSS REFERENCE[0001]This application claims foreign priority under Paris Convention and 35 U.S.C. §119 to Korean Patent Application No. 10-2009-0076043, filed Aug. 18, 2009 with the Korean Intellectual Property Office.BACKGROUND OF THE INVENTION[0002]1. Technical Field[0003]The present invention relates to a plasma etching device for treating a large size wafer. More particularly, the present invention relates to a plasma etching device for improving plasma uniformity by outer inserting an integral cathode liner having a plurality of first vents and second vents formed at two levels respectively to be spaced apart, to a cathode assembly such that the uniformity of a gas flow and exhaust flow of a reaction gas within a chamber is maintained and simultaneously, preventing a flickering phenomenon by grounding a lower end part of the integral cathode liner to the chamber.[0004]2. Description of the Related Art[0005]Generally, a large size wafer used for a semiconductor integrated circu...

AI Technical Summary

Benefits of technology

[0015]An aspect of exemplary embodiments of the present invention is to address at least the problems and / or disadvantages and to provide at least the advantages described below. Accordingly, an aspect of exemplary embodiments of the present invention is to maintain a uniformity of a gas flow and exhaust flow within a chamber to improve plasma uniformity, by pump exhausting a reaction gas, a polymer, or a particle generated after plasma reaction through an integral cathode liner having a plurality of first vents and second vents formed at two levels.

[0016]Another aspect of exemplary embodiments of the present invention is to improve a ground force of a cathode liner, thus preventing a plasma flickering phenomenon occurring between vents.

[0017]A further aspect of exemplary embodiments of the present invention is to secure an etching uniformity of the whole substrate surface by making it possible to control aperture rates of second vents and control plasma uniformity through a minute control of a gas flow and exhaust flow within the chamber.

[0025]The device further includes a gasket for preventing a leakage of a reaction gas at a lower side surface of the coupling plate.

Problems solved by technology

Firstly, because the reaction gas, the polymer, or the particle generated after plasma reaction is pump exhausted through one baffle plate, there is a limit in uniformly exhausting the reaction gas, the by-product, etc. Thus, there is a problem that it fails to secure the plasma uniformity within the chamber.

Secondly, because the baffle plate is not effectively grounded to the chamber, there is a problem that there occurs a plasma flickering phenomenon in which plasma between the vents is irregularly flickered.

Thirdly, because of the absence of a control means for controlling aperture ratios of the vents, there is a problem that it is impossible to minutely control an etching rate of the substrate through control of a gas flow or exhaust flow within the chamber.

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