Darlington distributed power amplifier based on linearization stacking technology

Abstract

The invention discloses a Darlington distributed power amplifier based on a linearization stacking technology, comprising a distributed linearization stacked Darlington transistor amplification network, a linearization stacked Darlington transistor input distribution network and a linearization stacked Darlington transistor output synthesis network. A core architecture of the invention adopts thedistributed linearization stacked Darlington transistor amplification network, and the amplification network is composed of three distributed Darlington transistors based on the linearization stackingtechnology at least; meanwhile, the invention considers influence of a two-transistor linearization stacked Darlington transistor on equivalent capacitance of an input and output artificial transmission line, accuracy of circuit design is greatly improved, and difficulty of circuit debugging in later period is reduced, so that the whole power amplifier obtains good broadband power output capability and power gain capability, and stability and reliability of a circuit are improved.

Description

technical field [0001] The invention relates to the fields of heterojunction bipolar transistor radio frequency power amplifiers and integrated circuits, in particular to a high-efficiency, high-output-power, high-gain distributed power amplifier applied to a transmitting module at the end of an ultra-wideband transceiver. Background technique [0002] With the rapid development of electronic warfare, software radio, ultra-wideband communication, wireless local area network (WLAN) and other military electronic warfare and communication, and civilian communication markets, RF front-end transceivers are also developing in the direction of high performance, high integration, and low power consumption. Therefore, the market urgently needs the radio frequency and microwave power amplifier of the transmitter to have ultra-wideband, high output power, high efficiency, low cost and other performances, and the integrated circuit is the key technology that is expected to meet the marke...

AI Technical Summary

Problems solved by technology

[0004] (1) High-power high-efficiency amplification capability is limited: the characteristic frequency of transistors in semiconductor processes is getting higher and higher, which leads to low breakdown voltage and limits the power capacity of a single transistor

In order to obtain high power capability, multi-channel transistor power synthesis is often required, but the efficiency of the power amplifier is relatively low due to the energy loss of the multi-channel synthesis network, so the high power and high efficiency capabilities are poor

[0005] (2) Ultra-broadband high power amplification capability is limited: in order to meet the high power index, multiple transistor power synthesis is required, but the load impedance of multi-channel synthesis is greatly reduced, resulting in a very high impedance conversion ratio; in high impedance conversion ratio Realizing broadband characteristics is a great challenge

[0007] ① In the traditional distributed power amplifier, the core amplifier circuit is realized by multiple single transistors in a distributed amplification arrangement. Since the single transistor is affected by parasitic parameters, its power gain will be significantly reduced as the operating frequency increases. , At the same time, the power characteristics will be significantly deteriorated, so in order to obtain an ultra-wideband flat amplification structure, it is necessary to sacrifice low-frequency gain to balance high-frequency loss, resulting in very low ultra-wideband gain of traditional distributed amplifiers;

[0008] ②In order to improve the amplifier gain and improve the isolation, Cascode dual-transistor distributed amplification structure is also used. However, although the Cascode dual-transistor increases the circuit isolation, it cannot gain a significant deterioration with frequency, nor can it realize the Cascode dual-transistor. Optimum impedance matching, which reduces output power characteristics

[0009] It can be seen from this that the design difficulties of ultra-wideband RF power amplifiers based on integrated circuit technology are: high power output is difficult under ultra-wideband; there are many limitations in the traditional single transistor structure or the distributed amplification structure of Cascode transistors

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