31results about How to "Increase the electric field" patented technology

An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

A composite photonic structure element includes a photonic crystal and a multi-layer film. The photonic crystal is formed by alternately laying an active layer having a nonlinear effect for converting a fundamental wave into a second higher harmonic and an inactive layer having no nonlinear effect, so that the energy of the fundamental wave coincides with the photonic band gap end. The multi-layer film is formed by layering a plurality of sets of two types of thin films having different refractive indexes so as to reflect the fundamental wave. The multi-layer film is connected to both ends of the photonic crystal. The fundamental wave comes into one of the end faces and the fundamental wave is reciprocally reflected between resonators having a multi-layer film so that the intensity of the fundamental wave in the photonic crystal is increased. The fundamental wave is converted into a second higher harmonic in the active layer and the second higher harmonic is extracted outside from the other end face.

The present invention provides a capacitive pen for operating on a capacitive touch panel (200), which includes: a sending unit (1), which sends a high-voltage AC signal to the capacitive touch panel (200); the capacitive pen controls A processing unit (2), which generates the high-voltage AC signal, and sends the high-voltage signal to the capacitive touch panel (200) through the sending unit (1), so that the capacitive touch panel (200 ) measuring the position information of the capacitive pen (100) according to the high voltage AC signal. The capacitive stylus provided by the present invention sends a high-voltage AC signal to the capacitive touch panel so that the capacitive touch panel can be positioned according to the high-voltage AC signal. Since the high-voltage AC signal is strong, the signal-to-noise ratio and positioning accuracy can be improved.

Provided in the present disclosure is a capacitive pen for operating on a capacitive touch-control panel (200), comprising: a receiving unit (1) for receiving a measurement signal transmitted by the capacitive touch-control panel (200), a signal processing unit (5) for generating a high voltage signal synchronous with the measurement signal according to the signal received by the receiving unit (1), and a transmitting unit (2) for transmitting the high voltage signal to the capacitive touch-control panel (200) such that the capacitive touch-control panel (200) obtains the information of a capacitive pen (100). The capacitive pen of the present disclosure transmits a synchronous high voltage signal to enhance the sensing signal of a touch-control panel, such that the touch-control panel can sense a small-area conductor, thus expanding the function of the pen on the basis of finger touch control, and greatly improving user experience. In addition, the circuit is easy to realize, and has low cost and good compatibility.

The invention discloses a tunneling field effect transistor for effectively increasing the on-state current, which belongs to the field of semiconductor devices and is used for increasing the on-state current of the tunneling field effect transistor. In the present invention, the upper and lower gate dielectric layers of the tunneling field effect transistor are extended to the source region and partly covered to the source region, the surface of the gate dielectric layer on one side of the source region is covered with a metal gate, and the surface of the gate dielectric layer on the other side of the source region is covered with a bias electrode , the bias electrode and the metal grid on this side are separated by a partition wall to form an up-and-down asymmetric structure. By applying a bias voltage to the bias electrode, or using the metal work function difference between the bias electrode and the metal grid, the gate electrode is enhanced. The electric field perpendicular to the channel direction on the upper and lower sides of the covered part of the source region increases the strength of the carrier line tunneling, and the total carrier tunneling area and tunneling probability increase, thereby effectively increasing the device's on-state current.