1517 results about "Non symmetric" patented technology

A coupling system for connecting a sun gear to a shaft within a planetary gear train, includes a sun gear coupling connecting the sun gear to the shaft. The sun gear coupling has at least one undulant flexible section joined to an inflexible spindle for accommodating misalignment between the sun gear and the shaft. The flexible section comprises a cylindrical ring having a diameter greater than the diameter of the spindle, and joined to the spindle by two longitudinally spaced apart diaphragms. The juncture between the diaphragms, the ring, and the spindle is curved in cross section on an outer side to improve flexibility and minimize stress concentrations, and the inner sides of the diaphragms are straight edges which result in a non-symmetric contour of the diaphragm walls.

A one transistor (1T-RAM) bit cell and method for manufacture are provided. A metal-insulator-metal (MIM) capacitor structure and method of manufacturing it in an integrated process that includes a finFET transistor for the 1T-RAM bit cell is provided. In some embodiments, the finFET transistor and MIM capacitor are formed in a memory region and an asymmetric processing method is disclosed, which allows planar MOSFET transistors to be formed in another region of a single device. In some embodiments, the 1T-RAM cell and additional transistors may be combined to form a macro cell, multiple macro cells may form an integrated circuit. The MIM capacitors may include nanoparticles or nanostructures to increase the effective capacitance. The finFET transistors may be formed over an insulator. The MIM capacitors may be formed in interlevel insulator layers above the substrate. The process provided to manufacture the structure may advantageously use conventional photomasks.

The specification and drawings present a new apparatus and method for providing a wide field-of-view as well as illumination uniformity in exit pupil expanders (EPE) using stacked EPE substrates (or plates) with non-symmetric exit pupil expansion that use a plurality of diffractive elements for expanding the exit pupil of a display for viewing.

Accordingly, the present invention provides a double gated transistor and a method for forming the same that results in improved device performance and density. The preferred embodiment of the present invention uses provides a double gated transistor with asymmetric gate doping, where one of the double gates is doped degenerately n-type and the other degenerately p-type. By doping on of the gates n-type, and the other p-type, the threshold voltage of the resulting device is improved. In particular, by asymmetrically doping the two gates, the resulting transistor can, with adequate doping of the body, have a threshold voltage in a range that enables low-voltage CMOS operation. For example, a transistor can be created that has a threshold voltage between 0V and 0.5V for nFETs and between 0 and −0.5V for pFETs.

By providing a substantially non-damaged semiconductor region between a pre-amorphization region and the gate electrode structure, an increase of series resistance at the drain side during the re-crystallization may be reduced, thereby contributing to overall transistor performance, in particular in the linear operating mode. Thus, symmetric and asymmetric transistor architectures may be achieved with enhanced performance without unduly adding to overall process complexity.

Asymmetric, semiconductor memory cells, arrays, devices and methods are described. Among these, an asymmetric, bi-stable semiconductor memory cell is described that includes: a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with the floating body region; a second region in electrical contact with the floating body region and spaced apart from the first region; and a gate positioned between the first and second regions, such that the first region is on a first side of the memory cell relative to the gate and the second region is on a second side of the memory cell relative to the gate; wherein performance characteristics of the first side are different from performance characteristics of the second side.

Symmetrical / asymmetrical bidirectional S-shaped I-V characteristics with trigger voltages ranging from 10 V to over 40 V and relatively high holding current are obtained for advanced sub-micron silicided CMOS (Complementary Metal Oxide Semiconductor) / BiCMOS (Bipolar CMOS) technologies by custom implementation of P1-N2-P2-N1 / / N1-P3-N3-P1 lateral structures with embedded ballast resistance 58, 58A, 56, 56A and periphery guard-ring isolation 88-86. The bidirectional protection devices render a high level of electrostatic discharge (ESD) immunity for advanced CMOS / BiCMOS processes with no latchup problems. Novel design-adapted multifinger 354 / interdigitated 336 layout schemes of the ESD protection cells allow for scaling-up the ESD performance of the protection structure and custom integration, while the I-V characteristics 480 are adjustable to the operating conditions of the integrated circuit (IC). The ESD protection cells are tested using the TLP (Transmission Line Pulse) technique, and ESD standards including HBM (Human Body Model), MM (Machine Model), and IEC (International Electrotechnical Commission) IEC 1000-4-2 standard for ESD immunity. ESD protection performance is demonstrated also at high temperature (140° C.). The unique high ratio of dual-polarity ESD protection level per unit area, allows for integration of fast-response and compact protection cells optimized for the current tendency of the semiconductor industry toward low cost and high density-oriented IC design. Symmetric / asymmetric dual polarity ESD protection performance is demonstrated for over 15 kV HBM, 2 kV MM, and 16.5 kV IEC for sub-micron technology.

A memory uses multiple threshold levels in a memory cell that are not a power of two, and further uses a cell mapping technique wherein the read mapping is only a partial function The domain of read states for a single three-level memory cell, for example, has three states, but only two of them can be uniquely mapped to a bit. The domain of read states for two three-level memory cell, for example, has nine states, but only eight of them can be uniquely mapped to three bits. Although the read mapping is only partial, the voltage margin for the three-level memory cells is larger that the voltage margin available in the commonly used four-level memory cells. This increased voltage margin facilitates memory cell threshold voltage sensing, thereby increasing the reliability of the memory. Memory reliability may be further improved by increasing the voltage margin between the memory cell 0 state and the 1 state relative to the voltage margin between the 1 state and the 2 state, which more effectively accommodates charge loss from the 0 state through electron leakage. Asymmetrical read and program mapping may also be used to improve read reliability in the presence of ground noise or VCC noise.