4727 results about "Transition layer" patented technology

Low-bandgap, monolithic, multi-bandgap, optoelectronic devices (10), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells (22, 24) including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate (26) by use of at least one graded lattice constant transition layer (20) of InAsP positioned somewhere between the InP substrate (26) and the LMM subcell(s) (22, 24). These devices are monofacial (10) or bifacial (80) and include monolithic, integrated, modules (MIMs) (190) with a plurality of voltage-matched subcell circuits (262, 264, 266, 270, 272) as well as other variations and embodiments.

A non-uniform interface is formed between a polycrystalline ultra hard material layer and a cemented tungsten carbide substrate, or a polycrystalline ultra hard material layer and a transition layer, or a transition layer and a substrate of a cutting element. A first sheet made from an intermediate material is formed and embossed on one face forming a non-uniform pattern raised in relief on the face. The embossed sheet is placed on a face of a presintered substrate. An ultra hard material sheet is formed and embossed, forming a non-uniform face complementary to the non-uniform face on the sheet of intermediate material. The ultra hard material sheet is placed over the intermediate material sheet so that the complementary faces are adjacent to each other. The assembly of substrate and sheets is sintered in a HPHT process. The sintering process causes the first sheet to become integral with the substrate and results in a substrate having a non-uniform cutting face onto which is bonded a polycrystalline ultra hard material layer. Embossed transition material sheets may be employed between the ultra hard material sheet and the first sheet to form transition layers with uniform or non-uniform interfaces.

A two-step masking process is disclosed for forming a ball limiting metallurgy (BLM) pad structure for a solder joint interconnection used between a support substrate and a semiconductor chip. A solder non-wettable layer and a solder wettable layer are deposited on the surface of a support substrate or semiconductor chip which are to be connected. A phased transition layer is deposited between the wettable and non-wettable layers. A thin photo-resist mask defines an area of the solder wettable and phased layers which are etched to form a raised, wettable frustum cone portion. A second mask is deposited on the surface of the support substrate or semiconductor chip, and has an opening concentrically positioned about the frustum cone. Solder is deposited in the opening and covers the frustum cone and the area about its periphery. When solidified, the solder, acting as a mask, is used to sub-etch the underlying solder non-wettable layer thereby defining the BLM pad. When reflowed, the solder beads away from the surface of the solder non-wettable layer to form a ball which securely adheres about the frustum cone.

The invention relates to a photoactive component, especially a solar cell, comprising organic layers and formed by at least one stacked pi, ni, and/or pin diode. The diodes are characterised in that they comprise at least one p-doped or n-doped transport layer having a larger optical band gap than that of the photoactive layer. The individual diodes are characterised by a high internal quantum yield, but can be optically thin (peak absorption <80%). A high external quantum yield is obtained by either enlarging the optical path of the incident light in the diodes using light traps, or by stacking a plurality of the diodes. The transition between two diodes being facilitated by transition layers for the purposes of improved recombination and generation. Both forms of embodiment have a number of specific advantages using the doped transport layers with a large band gap.

A coating system for Si-containing materials, particularly those for articles exposed to high temperatures. The coating system exhibits improved resistance to corrosion from sea salt and CMAS as a result of using aluminate compounds to protect silicate-containing layers of the coating system. The coating system includes an environmental barrier coating, a thermal barrier coating overlying the environmental barrier coating and formed of a thermal-insulating material, and a transition layer between the environmental barrier coating and thermal barrier coating, wherein the transition layer contains at least one aluminate compound and/or alumina.

The invention discloses a manufacturing method of a multilayer shell-core composite structural part, which comprises the following steps of: (1) respectively preparing feed for injection forming of a core layer, a transition layer and a shell layer, wherein powder in the feed of the core layer and the powder in the feed of the shell layer are selected from one or a mixture of some of metal powder, ceramic powder, or toughened ceramic powder and are different from each other, and the powder in the feed of the transition layer is gradient composite powder; (2) respectively manufacturing blanks of the multilayer shell-core composite structural part layer by layer with a powder injection forming method; (3) degreasing the blanks; and (4) sintering the blanks to obtain the multilayer shell-core composite structural part. The multilayer shell-core composite structural part is manufactured with the powder injection forming method, and has the advantages of high surface hardness, abrasion resistance, uniform thickness of the shell layer, stable and persistent performance, strong binding force between the shell layer and the core layer due to the transition layer, good integral bending strength and good impact toughness and is difficult to crack.

An enhancement-mode GaN transistor and a method of forming it. The enhancement-mode GaN transistor includes a substrate, transition layers, a buffer layer comprised of a III Nitride material, a barrier layer comprised of a III Nitride material, drain and source contacts, a gate III-V compound containing acceptor type dopant elements, and a gate metal, where the gate III-V compound and the gate metal are formed with a single photo mask process to be self-aligned and the bottom of the gate metal and the top of the gate compound have the same dimension. The enhancement mode GaN transistor may also have a field plate made of Ohmic metal, where a drain Ohmic metal, a source Ohmic metal, and the field plate are formed by a single photo mask process.

An insert for a drill bit may include a metallic carbide body; an outer layer of polycrystalline diamond material on the outermost end of the insert, the polycrystalline diamond material comprising a plurality of interconnected first diamond grains and a first binder material in interstitial regions between the interconnected first diamond grains; and at least two transition layers between the metallic carbide body and the outer layer, the at least two transition layers comprising: an outermost transition layer comprising a composite of second diamond grains, first metal carbide or carbonitride particles, and a second binder material; and an innermost transition layer comprising a composite of third diamond grains, second metal carbide or carbonitride particles, and a third binder material wherein a thickness of the outer layer is lesser than that of each of the at least two transition layers.

A high strength multi-layer polymeric article having a low wear surface includes a base polymer layer, and a polymer composite capping layer disposed on the base polymer layer. The capping layer includes a first polymer including a transfer film forming polymer, and a second polymer different from the first polymer for strengthening this polymer composite mixed with the first polymer. The first polymer provides at least 10 weight % of the composite capping layer. A transition layer composite including the first and second polymer is interposed between the capping layer and the base polymer layer, at least a portion of the transition layer providing a non-constant first or second polymer concentration. A wear rate of the article is <10⁻⁷ mm³/Nm. The first polymer can be PTFE and the second polymer can be a polyaryletherketone (PEEK).

A build-up welding technology for repairing the rolling roller of section includes such steps as pre-turning, defect inspection, pre-heating, welding transition layer with flux-cored wire SN-YD1031 and flux SSF, welding working layer with flux-cored wire SN-YD285 and flux HJ107, heat treating, turning, and inspection.

A transition layer 38 is provided on a die pad 22 of an IC chip 20 and integrated into a multilayer printed circuit board 10. Due to this, it is possible to electrically connect the IC chip 20 to the multilayer printed circuit board 10 without using lead members and a sealing resin. Also, by providing the transition layer 38 made of copper on an aluminum pad 24, it is possible to prevent a resin residue on the pad 24 and to improve connection characteristics between the die pad 24 and a via hole 60 and reliability.

The present invention is nanometer multilayer metal carbide/diamond-like film material and its preparation process. The nanometer multilayer film material includes one base material layer, one transition layer and one nanometer multilayer film layer arranged successively. The transition layer consists of one metal layer, one metal nitride layer and one metal carbonitride layer; and the nanometer multilayer film layer consists of metal carbide layers and diamond-like film layers arranged alternately. The preparation process includes: bombarding with Ti, Cr, and Zr or W targets successively to clean the base material; depositing one metal layer, one metal nitride layer and one metal carbonitride layer successively; and depositing metal carbide layers and diamond-like film layers alternately. The nanometer multilayer film material has high micro hardness, low friction coefficient and high adhesion, and may be applied in improving the surface performance of metal parts.

The invention relates to a welding method of a girth weld of an inner cladding thin-walled stainless steel composite tube. The welding method comprises the following steps: girth welds of the inner cladding stainless steel composite tube are respectively and gradually welded by three welding seams, an inner cladding layer welding seam and a transition layer welding seam are welded by argon tungsten-arc welding, the stainless steel inner cladding layer welding seam adopts welding wires with the same quality thereof, the transition layer welding seam adopts ER309 welding wires, and the base layer is welded by shielded metal arc welding or CO2 gas shielded welding and adopts a welding material matched with the strength of the base layer; and the inner cladding layer, the transition layer and the first layer of the base layer are welded under back argon gas protection. The welding method guarantees corrosion resistance of a joint of the inner cladding layer and mechanical property of a welding joint of the base layer; and the method plays an important role in promoting wide application of the inner cladding stainless steel composite tube in businesses such as oil-gas delivery, chemical industry, oil refining and the like, improving corrosion resistance of an inner wall of a pipe, and solving the problems of high cost and the like caused by adopting a full wall-thickness stainless steel pipe.

Environmental barrier coatings for high temperature ceramic components including: a bond coat layer; an optional silica layer; and at least one transition layer including: from about 85% to about 100% by volume of the transition layer of a primary transition material selected from a rare earth disilicate, or a doped rare earth disilicate; and from 0% to about 15% by volume of the transition layer of a secondary material selected from Fe₂O₃, iron silicates, rare earth iron oxides, Al₂O₃, mullite, rare earth aluminates, rare earth aluminosilicates, TiO₂, rare earth titanates, Ga₂O₃, rare earth gallates, NiO, nickel silicates, rare earth nickel oxides, Lnb metals, Lnb₂O₃, Lnb₂Si₂O₇, Lnb₂SiO₅, borosilicate glass, alkaline earth silicates, alkaline earth rare earth oxides, alkaline earth rare earth silicates, and mixtures thereof; where the transition layer is applied to the component as a slurry including at least water, the primary transition material and at least one slurry sintering aid, and where a reaction between the slurry sintering aid and the primary transition material results in the transition layer having a porosity of from 0% to about 15% by volume of the transition layer.