Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Testing method and testing device of avalanche photodiode

An avalanche optoelectronics and testing method technology, applied in the field of optoelectronics, can solve the problems of mirror image ratio imbalance and low accuracy of measuring dark current responsivity, and achieve the effect of improving measurement accuracy and speed

Active Publication Date: 2013-11-13
GUANGDONG RUIGU OPTICAL NETWORK COMM CO LTD
View PDF11 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When testing the photocurrent and dark current of the avalanche photodiode, the mirror current test method is used. This method has the influence of mirror ratio imbalance, which makes the measurement accuracy of the dark current responsivity not high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Testing method and testing device of avalanche photodiode
  • Testing method and testing device of avalanche photodiode
  • Testing method and testing device of avalanche photodiode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0029] Example: see Figure 1 to Figure 6 , the testing method of the avalanche photodiode provided by the present embodiment, it comprises the following steps:

[0030] (1) On the circuit main board, a function control circuit and a test circuit connected to each other are set, wherein the function control circuit tests the avalanche photodiode by controlling the test circuit;

[0031] (2) In the test circuit described in step (1), a sensitivity test limiting amplifier circuit, a reverse breakdown voltage test circuit and photocurrent, dark current test circuit are set;

[0032] (3) In the reverse breakdown voltage test circuit described in step (2), the Boost high voltage generation circuit connected in turn is set, the linear voltage stabilization filter circuit and the constant current source generation circuit; In the current and dark current test circuit, a feedback IV conversion circuit connected to each other, an isolated power supply circuit and an optocoupler transm...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a testing method of an avalanche photodiode, which is characterized by comprising the following steps that (1), a function control circuit and a testing circuit are arranged on a circuit mainboard, and the function control circuit tests the avalanche photodiode through controlling the testing circuit; (2), a sensitivity testing amplitude limiting amplification circuit, a reverse breakdown voltage testing circuit and a light current and dark current testing circuit are arranged in the testing circuit in Step (1); and (3), a Boost high voltage generation circuit, a linear voltage stabilization filter circuit, a constant current source generation circuit, a feedback type IV (current-voltage) conversion circuit, an isolated power supply circuit and an optocoupler transmission circuit which are connected sequentially are arranged in the testing circuits in Step (2). The invention further discloses a testing device of the avalanche photodiode, which implements the method.

Description

technical field [0001] The invention relates to the field of photoelectric technology, in particular to a method for testing an avalanche photodiode and an avalanche photodiode test device for implementing the method. Background technique [0002] The avalanche photodiode is a p-n junction photodetection diode, in which the avalanche multiplication effect of carriers is used to amplify the photoelectric signal to improve the detection sensitivity. Its basic structure often adopts the Read diode structure that is prone to avalanche multiplication effect (that is, N+PIP+ type structure, P+ side receives light), and a large reverse bias is added during operation to make it reach the state of avalanche multiplication; its light absorption The area is basically the same as the multiplication area (there are P area and I area with high electric field). [0003] The traditional method of testing the reverse breakdown voltage of an avalanche photodiode is to gradually increase the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R31/26
Inventor 胡锋肖华平
Owner GUANGDONG RUIGU OPTICAL NETWORK COMM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com