265results about How to "Reduce grain size" patented technology

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The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma, and then thermal crystallization using a metal element is performed. The concentration of crystal nuclei1 generated is thus increased, making the grain size smaller, by performing these processes. Heat treatment may also be performed, of course, after exposing the semiconductor film, to which the metal element is added, to an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma.

The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma, and then thermal crystallization using a metal element is performed. The concentration of crystal nuclei1 generated is thus increased, making the grain size smaller, by performing these processes. Heat treatment may also be performed, of course, after exposing the semiconductor film, to which the metal element is added, to an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma.

A castable, moldable, or extrudable structure using a metallic base metal or base metal alloy. One or more insoluble additives are added to the metallic base metal or base metal alloy so that the grain boundaries of the castable, moldable, or extrudable structure includes a composition and morphology to achieve a specific galvanic corrosion rates partially or throughout the structure or along the grain boundaries of the structure. The insoluble additives can be used to enhance the mechanical properties of the structure, such as ductility and / or tensile strength. The insoluble particles generally have a submicron particle size. The final structure can be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final structure as compared to the non-enhanced structure.

A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.

A castable, moldable, and / or extrudable structure using a metallic primary alloy. One or more additives are added to the metallic primary alloy so that in situ galvanically-active reinforcement particles are formed in the melt or on cooling from the melt. The composite contain an optimal composition and morphology to achieve a specific galvanic corrosion rate in the entire composite. The in situ formed galvanically-active particles can be used to enhance mechanical properties of the composite, such as ductility and / or tensile strength. The final casting can also be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final composite over the as-cast material.

A castable, moldable, or extrudable magnesium-based alloy that includes one or more insoluble additives. The insoluble additives can be used to enhance the mechanical properties of the structure, such as ductility and / or tensile strength. The final structure can be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final structure as compared to the non-enhanced structure. The magnesium-based composite has improved thermal and mechanical properties by the modification of grain boundary properties through the addition of insoluble nanoparticles to the magnesium alloys. The magnesium-based composite can have a thermal conductivity that is greater than 180 W / m−K, and / or ductility exceeding 15-20% elongation to failure.

The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

A method for electrochemically plating tin or tin alloy onto a workpiece to provide a tin or tin alloy deposit on said workpiece having a stress differential and workpieces characterized by a tin or tin alloy deposit having a stress differential.

A ceramic anode structure obtainable by a process comprising the steps of: (a) providing a slurry by dispersing a powder of an electronically conductive phase and by adding a binder to the dispersion, in which said powder is selected from the group consisting of niobium-doped strontium titanate, vanadium-doped strontium titanate, tantalum-doped strontium titanate, and mixtures thereof, (b) sintering the slurry of step (a), (c) providing a precursor solution of ceria, said solution containing a solvent and a surfactant, (d) impregnating the resulting sintered structure of step (b) with the precursor solution of step (c), (e) subjecting the resulting structure of step (d) to calcination, and (f) conducting steps (d)-(e) at least once.

The production of low-loss, tunable composite ceramic materials with improved breakdown strengths is disclosed. The composite materials comprise ferroelectric perovskites such as barium strontium titanate or other ferroelectric perovskites combined with other phases such as low-loss silicate materials and / or other low-loss oxides. The composite materials are produced in sheet or tape form by methods such as tape casting. The composite tapes exhibit favorable tunability, low loss and tailorable dielectric properties, and can be used in various microwave devices.

According to one embodiment, a soft magnetic layer, a first nonmagnetic underlayer having a fine crystal structure and made of Pd or a Pd alloy, a second nonmagnetic underlayer made of Ru or an Ru alloy, and a perpendicular magnetic recording layer are stacked on a nonmagnetic substrate.

A method is provided for forming a Si electroluminescence (EL) device for emitting light at short wavelengths. The method comprises: providing a substrate; forming a first insulator layer overlying the substrate; forming a silicon-rich silicon oxide (SRSO) layer overlying the first insulator layer, embedded with nanocrystalline Si having a size in the range of 0.5 to 5 nm; forming a second insulator layer overlying the SRSO layer; and, forming a top electrode. Typically, the SRSO has a Si richness in the range of 5 to 40%. In one aspect, the SRSO layer is formed using a DC sputtering process. In another aspect, the SRSO formation step includes a rapid thermal annealing (RTA) process subsequent to depositing the SRSO. Likewise, thermal oxidation or plasma oxidation can be performed subsequent to the SRSO layer deposition. The size of Si nanocrystals is decreased in response to above-mentioned deposition, annealing, and oxidation processes.

A castable, moldable, and / or extrudable structure using a metallic primary alloy. One or more additives are added to the metallic primary alloy so that in situ galvanically-active reinforcement particles are formed in the melt or on cooling from the melt. The composite contains an optimal composition and morphology to achieve a specific galvanic corrosion rate in the entire composite. The in situ formed galvanically-active particles can be used to enhance mechanical properties of the composite, such as ductility and / or tensile strength. The final casting can also be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final composite over the as-cast material.

A method and an apparatus for controlling a grain size of a component generated using an additive manufacturing process. Construct a first fused layer of the component by fusing a plurality of layers of a fusible material, wherein the first fused layer has a thickness T1. Thereafter, introduce stress through the first fused layer of the component. The component is generated by repeating the aforementioned steps. Further, the component is heated to a temperature above a recrystallization start temperature (Rxst) to control the grain size of the component.

A hot-rolling transformation-induced plasticity steel plate and a preparation method thereof belong to the field of metallurgical technology. The steel plate comprises the following components by weight percentage: 0.18 to 0.20 percent of C, 1.30 to 1.45 percent of Mn, 0.60 to 0.70 percent of Si, 0.50 to 0.60 percent of Al, 0.009 percent or less than 0.009 percent of P, 0.007 percent or less than 0.007 percent of S, 0 to 0.040 percent of Nb and the balance of Fe. The preparation method thereof comprises the steps of: smelting low-silicon and low-carbon steel into steel ingot; heating the steel ingot to 1200 plus / minus 10 DEG C to obtain billet through forging; loading the billet into a heating furnace, heating the billet to 1200 plus / minus 10 DEG C and keeping temperature for 1 to 2 hours; carrying out rough rolling and precision rolling; air cooling till the temperature reaches 700 to 760 DEG C; accelerating cooling at a speed of reducing 40 to 50 DEG C per second; and adopting a reeling machine for reeling. The hot-rolling transformation-induced plasticity steel plate prepared by the method has high intensity of tension and better impact ductility.

The invention relates to steel for a 300MPa-grade automobile structural part and a production method for the steel. The steel comprises the following main components in percentage by weight: 0.06-0.08 percent of C, 0.05-0.09 percent of Si, 0.30-0.45 percent of Mn, 0.025-0.055 percent of Al, 0.015-0.025 percent of P, less than or equal to 0.006 percent of S, 0.010-0.019 percent of Nb, less than or equal to 0.006 percent of N and the balance of Fe and impurities. The production method comprises the production steps of molten iron desulfurization, converter smelting, ladle argon blowing, continuous casting, heating of a casting blank, hot rolling, winding, conventional pickling, cold rolling, continuous operation and flattening for later use. The production method disclosed by the invention has the advantages of short process flow, lower energy consumption and stable mechanical property; and in addition, on the premise that the yield strength of 300-340MPa and the tensile strength of 390-445MPa are met, the elongation percentage is not lower than 31 percent, the plastic strain ratio r is 1.45-1.80, a strain hardening index n is 0.16-0.20, a wide-cold test bending is 180 degrees and a bending diameter d is equal to 0; and in a metallographic structure, an equiaxed ferrite is 85-90 percent and a granular pearlite is 10-15 percent.

Provided are a metal halide perovskite light emitting device and a method of manufacturing the same. The method of manufacturing a metal halide perovskite light emitting device includes preparing a substrate having a positive electrode formed on an upper part thereof, starting coating the substrate on which the positive electrode is formed with a metal halide perovskite light emitting layer, forming a metal halide perovskite light emitting layer by dripping a low-molecular-weight organic substance solution during the coating of the metal halide perovskite light emitting layer, and forming a negative electrode on the light emitting layer. According to the present invention, a low-molecular-weight organic substance is included in a metal halide perovskite light emitting layer to reduce the sizes of grains in metal halide perovskites, to improve electrical characteristics by the effect of defect passivation on a metal halide perovskite, and to improve luminous efficiency of a thin film by reducing an exciton diffusion length by spatially trapping excitons well in decreased grains, thereby effectively improving efficiency of a metal halide perovskite light emitting diode and overcoming limitations in application.

The present invention provides a method for the fabrication of high performance densified nanocrystalline bulk thermoelectric material, comprising: (1) preparing a thermoelectric alloy nanopowders by a ball milling process to achieve an average crystal size of 5-30 nm, and (2) preparing the nanocrystalline bulk thermoelectric material by high pressure sintering at a temperature of 0.25-0.8 Tm under a pressure of 0.8-6.0 GPa for 10-120 minutes, to achieve a relative density of 90-100% and an average grain size of 10-50 nm. The method is easy to operate and allows the production of a thermoelectric material with a ZT value higher than 2. In addition, the method can ensure both good thermoelectric properties and high density, and therefore have important applications for energy industry.

A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a third slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, and a fourth slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width. The slit patterns arranged at the first to fourth slit regions are sequentially enlarged in width in the horizontal direction in multiple proportion to the width d of the slit pattern at the first slit region. The centers of the slit patterns arranged at the first to fourth slit regions in the horizontal direction are placed at the same line. The slit patterns arranged at the respective slit regions in the vertical direction are spaced from each other with a distance of 8*d. Alternatively, the first to fourth slit regions may be arranged in reverse order, or in the vertical direction.

The invention discloses a titanium silicalite molecular sieve synthesizing method which comprises the following steps: forming a crystallization mixture from a titanium source, a template agent, water, polyhydric alcohols, peroxide, a silicon source and an optional inorganic ammonium source, crystallizing, and recycling the titanium silicalite molecular sieve, wherein the silicon source refers to an organic silicon source and / or a solid silicon source. According to the method, the activity of the synthesized titanium silicalite molecular sieve can be improved, and the grain size is reduced.

Bevel and hypoid gears are used in power transmissions including automotive applications. Provided is a net shaped bevel or hypoid gear having a generally annular gear body including a plurality of radially outwardly extending gear teeth formed from a generally annular blank made of powdered metal. Also provided is a method for manufacturing a net shaped bevel or hypoid gear including the steps of providing and optionally heat treating a generally ring-shaped or annular blank made of metal powder, then incrementally deforming the blank by orbitally forming or roll forming to produce a net shaped gear member with a plurality of outwardly extending gear teeth, which may be of a bevel or hypoid type.

A process for manufacturing a soluble casting core for use in casting complex shaped metal matrix composite components. The soluble casting core is generated by a sequence of steps which provide a molten slurry mixture composed of an alkali metal salt such as sodium carbonate and a plurality of ceramic particulates such as magnesium oxide dispersed therein. After heating and mixing the slurry mixture is solidified in a mold pattern to form a casting core configured to generate a complex shaped component during a casting process. The soluble casting core is used for casting molten metal alloys therein, without failure of the casting surfaces and forming of a complex shaped metal matrix composite component. The soluble casting core is readily dissolved and separated from the soluble casting core by immersing the core mold in heated water and / or exposing to steam, without damage to the metal matrix composite component.

A tastable, moldable, and / or extrudable structure using a metallic primary alloy. One or more additives are added to the metallic primary alloy so that in situ galvanically-active reinforcement particles are formed in the melt or on cooling from the melt. The composite contains an optimal composition and morphology to achieve a specific galvanic corrosion rate in the entire composite. The in situ formed galvanically-active particles can be used to enhance mechanical properties of the composite, such as ductility and / or tensile strength. The final casting can also be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final composite over the as-cast material.

The invention relates to a high-size special-shape carbon-based composite material member and a preparing method thereof. The member includes, by mass, 20-35% of carbon fibers, 35-75% of pyrolytic carbon and 5-15% of SiC. The preparing method includes needling the continuous carbon fibers into a prefabricated blank the density of which is 0.4-0.55 g / cm<3> according to a required shape of the member; then fixing the inner and outer surfaces of the prefabricated blank by adopting a graphite mold; and then performing high-temperature thermal treatment, a first time of carbon deposition, demolding, coarse machining, a second time of carbon deposition, graphite processing, silicon vapor bathing and finish machining in order to obtain a finished product. According to the member and the method, a problem that high-size special-shape carbon-based composite material members are liable to deform in long-time standing processes and preparing processes is overcome, and the obtained product has advantages of good mechanical performance, a low thermal expansion coefficient, high thermal conductivity, good chemical stability, and the like, is suitable for industrial production, and can be applied in the field of aviation and aerospace, the field of communication and transportation, the field of biomedicine, and the like.

A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.

laminated ceramic capacitor which has favorable moisture resistance includes an inner layer section that has dielectric ceramic layers and internal electrodes stacked alternately, and outer layer sections formed outside the inner layer section. The dielectric ceramic layers have a perovskite-type compound including a main constituent containing Ca and Zr, and an additive containing Si and Mn. The average grain size in the dielectric ceramic layers constituting the outer layer sections is smaller than the average grain size in the dielectric ceramic layers constituting the inner layer section. The Si / Mn molar ratio in the dielectric ceramic near the interfaces between the internal electrodes and the dielectric ceramic layers is ≦15.

The present invention provides an aluminium alloy refiner. The aluminium alloy refiner is characterized by comprising 7 to 10 parts of Ti, 2 to 3 parts of B and the balance of Al by weight, for example, 8 parts of Ti, 3 parts of B and 89 parts of Al by weight. The aluminium alloy refiner is prepared by rapid solidification. After the refiner is added to A356.2 aluminium alloy, the grain size of the alloy is significantly reduced than that of the aluminium alloy treated by a conventional refiner. Moreover, the solubility of metals in liquid may be increased due to rapid solidification, such that the refiner is more easily absorbed by the aluminium alloy melt after being added to the aluminium alloy.