265results about How to "Reduce grain size" patented technology

The invention relates to devices for the treatment of heart disease and particularly to endo-arterial prostheses, which are commonly called stents. More particularly, the invention relates to methods of manufacturing and coating stents utilizing thermal spray processing (TSP). In one aspect the invention involves the use of TSP for the manufacture of fine grained tubing for subsequent use as a stent or other tubular or ring-based implant, or the manufacture of intermediate sized tubing that may then be drawn to final size tubing and for the coating of a stent. An average grain size of less than 64 microns is achieved by the invention resulting in a stent having an annular wall average thickness of about eight or more grains.

The number of grains in active regions of devices can be made uniform by making the grains of crystalline semiconductor films, obtained by thermal crystallization using a metal element, smaller. The present invention is characterized in that a semiconductor film is exposed within an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma, and then thermal crystallization using a metal element is performed. The concentration of crystal nuclei1 generated is thus increased, making the grain size smaller, by performing these processes. Heat treatment may also be performed, of course, after exposing the semiconductor film, to which the metal element is added, to an atmosphere in which a gas, having as its main constituent one or a plurality of members from the group consisting of inert gas elements, nitrogen, and ammonia, is processed into a plasma.

A castable, moldable, or extrudable structure using a metallic base metal or base metal alloy. One or more insoluble additives are added to the metallic base metal or base metal alloy so that the grain boundaries of the castable, moldable, or extrudable structure includes a composition and morphology to achieve a specific galvanic corrosion rates partially or throughout the structure or along the grain boundaries of the structure. The insoluble additives can be used to enhance the mechanical properties of the structure, such as ductility and / or tensile strength. The insoluble particles generally have a submicron particle size. The final structure can be enhanced by heat treatment, as well as deformation processing such as extrusion, forging, or rolling, to further improve the strength of the final structure as compared to the non-enhanced structure.

The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

A method and an apparatus for controlling a grain size of a component generated using an additive manufacturing process. Construct a first fused layer of the component by fusing a plurality of layers of a fusible material, wherein the first fused layer has a thickness T1. Thereafter, introduce stress through the first fused layer of the component. The component is generated by repeating the aforementioned steps. Further, the component is heated to a temperature above a recrystallization start temperature (Rxst) to control the grain size of the component.

A method for manufacturing a memory device, and a resulting device, is described using silicon oxide doped chalcogenide material. A first electrode having a contact surface; a body of phase change memory material in a polycrystalline state including a portion in contact with the contact surface of the first electrode, and a second electrode in contact with the body of phase change material are formed. The process includes melting and cooling the phase change memory material one or more times within an active region in the body of phase change material without disturbing the polycrystalline state outside the active region. A mesh of silicon oxide in the active region with at least one domain of chalcogenide material results. Also, the grain size of the phase change material in the polycrystalline state outside the active region is small, resulting in a more uniform structure.