A thin film magnetic head includes first and second shield
layers that are positioned on both sides of a magnetoresistive (MR) stack with respect to a film surface orthogonal direction; a first exchange-
coupling layer that is positioned between the MR stack and the first shield layer and that generates an exchange-
coupling between a first magnetoresistive (MR)
magnetic layer and a first magnetic
control layer of the first shield layer; a second exchange-
coupling layer that is positioned between the MR stack and the second shield layer and that generates an exchange-coupling between a second magnetoresistive (MR)
magnetic layer and a second magnetic
control layer of the second shield layer; a bias
magnetic field application layer that is disposed at an opposite surface of the MR stack from an
air bearing surface (ABS) and that applies a bias
magnetic field to the MR stack in a direction orthogonal to the ABS; and pair of side shield
layers that are positioned at both sides of the MR stack with respect to a track width direction. Each of the side shield
layers includes a pair of magnetic layers that are antiferromagnetically exchange-coupled through a side shield
ruthenium layer.