43results about How to "High dry etch resistance" patented technology

The invention provides an organic film composition comprises (A) a heat-decomposable polymer, (B) an organic solvent, and (C) an aromatic ring containing resin, with the weight reduction rate of (A) the heat-decomposable polymer from 30° C. to 250° C. being 40% or more by mass. There can be provided an organic film composition having not only a high dry etching resistance but also an excellent filling-up or flattening characteristics.

The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

A material comprising a novolac resin having a C6-C30 aromatic hydrocarbon group substituted with a sulfo group or an amine salt thereof is useful in forming a photoresist undercoat. The undercoat-forming material has an extinction coefficient sufficient to provide an antireflective effect at a thickness of at least 200 nm, and a high etching resistance as demonstrated by slow etching rates with CF4 / CHF3 gas for substrate processing.

The present invention relates to a positive photosensitive composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is less than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor. The invention also relates to a process of forming an image using the novel photosensitive composition.

A polymer is composed of recurring units of hydroxyvinylnaphthalene, (meth)acrylic units having a lactone ring fused to a bridged ring, and (meth)acrylic units having acid labile groups. A positive resist composition comprising the polymer as a base resin, when exposed to high-energy radiation and developed, exhibits a high sensitivity, a high resolution, and a minimal line edge roughness due to controlled swell during development.

Disclosed is a composition for forming a resist underlayer film for lithography purposes, which is used for the formation of a resist underlayer film that can be used as a hard mask. Specifically disclosed is a composition for forming a resist underlayer film for lithography purposes, which contains a hydrolysable organosilane or a hydrylysate or hydrolyzed and condensed product thereof as a silane compound, wherein a hydrolysable organosilane represented by formula (1) [wherein R1 represents a group represented by formula (2) (wherein R4 represents an organic group; R5 represents an alkylene group having 1 to 10 carbon atoms, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination of any two or more of them; and X1 represents a group represented by formula (3), (4) or (5)); R2 represents an organic group; and R3 represents a hydrolysable group] is contained as the hydrolysable organosilane.

A polymerizable compound having a fluorinated substituent (Z) represented by the general formula (1), an adamantane structure and a polymerizable group (A) having the structure represented by the general formula (1), a production method thereof, and a photoresist composition, a thermocurable resin composition and a photocurable resin composition containing a polymer obtained using the polymerizable compound are provided. Use of the polymerizable compound with the adamantane structure and a resin composition thereof in the present invention provides in the field of photolithography the effect of preventing a liquid immersion medium from penetration and improving dry etching resistance in a liquid immersion exposure method as well as reducing adhesion to a mold and improving dry etching resistance in a nanoimprint method.

Resist underlayer film-forming composition for forming resist underlayer film with high dry etching resistance, wiggling resistance and exerts good flattening property and embedding property for uneven parts, including resin obtained by reacting organic compound A including aromatic ring and aldehyde B having at least two aromatic hydrocarbon ring groups having phenolic hydroxy group and having structure wherein the aromatic hydrocarbon ring groups are bonded through tertiary carbon atom. The aldehyde B may be compound of Formula (1):The obtained resin may have a unit structure of Formula (2):Ar1 and Ar2 each are C6-40 aryl group. The organic compound A including aromatic ring may be aromatic amine or phenolic hydroxy group-containing compound. The composition may contain further solvent, acid and / or acid generator, or crosslinking agent.Forming resist pattern used for semiconductor production, including forming resist underlayer film by applying the resist underlayer film-forming composition onto semiconductor substrate and baking it.

There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures:

An organic film composition including a compound represented by the following general formula (1),wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R1 represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14.There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling / planarizing characteristics.

The invention provides a compound for forming an organic film having a partial structure represented by the following formula (vii-2),wherein R1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting R1 may be substituted by an oxygen atom; a+b is 1, 2 or 3; c and d are each independently 0, 1 or 2; x represents 0 or 1, when x=0, then a=c=0; L7 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L8′ represents the partial structure represented by the following formula (i), 0≦o<1, 0<p≦1 and o+p=1,wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L0 represents a divalent organic group. There can be provided an organic film composition for forming an organic film having high dry etching resistance as well as advanced filling / planarizing characteristics.

The (meth)acrylate of the present invention is represented by the following formula (1). The (meth)acrylate can be produced by first producing a lactone by reducing an addition product obtained by the Diels-Alder reaction between 1,3-diene and maleic anhydride, and then hydrating the lactone to produce an alcohol followed by (meth)acrylation of the alcohol. A polymer produced by (co)polymerizing a monomer composition comprising the (meth)acrylate of the present invention is excellent in transparency, dry etching resistance, and solubility in organic solvents, and so it is preferably used as a resin for a chemically amplified resist composition. wherein each of R1, R2, R3 and R4 represents a hydrogen atom, a methyl group or an ethyl group; either one of X1 or X2 represents a (meth)acryloyloxy group and the other represents a hydrogen atom; both A1 and A2 represent hydrogen atoms, or A1 and A2 form —O—, —CH2— or —CH2CH2—.

An object of the present invention is to provide a composition for formation of etching stopper layer, which can simultaneously realize dry etching selectivity and low permittivity, and a production process of a semiconductor device using the same. This object can be attained by a composition for formation of etching stopper layer, comprising a silicon-containing polymer, the silicon-containing polymer contained in the composition comprising a disilylbenzene structure, and a production process of a semiconductor device comprising forming an etching stopper layer using the composition.

There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures:

The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.

The present invention provides photoacid generators for use in chemically amplified resists and lithographic processes using the same.

A problem of The present invention is to provide a curable composition capable of forming a resist which can be easily washed after curing and which has high dry etching resistance and excellent precision of fine pattern transfer, also provide a resist film and a laminate each containing the curable composition, and further provide a pattern forming method using the resist film. The problem of the present invention can be solved by providing a curable composition containing a multifunctional polymerizable monomer (A) which has two or more groups having a polymerizable group and has at least one group Q having a polymerizable group represented by formula (1) below, the amount of silicon atoms in an nonvolatile content being 10 wt % or more.

Disclosed is a composition for forming a fine pattern, which enables to form a fine pattern having high dry etching resistance. Also disclosed is a method for forming such a fine pattern. The composition contains a resin containing a repeating unit having a silazane bond, and a solvent. The method for forming a fine pattern comprises a step for processing a resist pattern with such a composition.

The present invention provides a fine pattern-forming composition enabling to form a resist pattern having high dry etching resistance, and also provides a pattern formation method using that composition. This formation method hardly causes pipe blockages in the production process. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a negative resist pattern from a chemically amplified resist composition, and comprises a polymer containing a repeating unit having a hydroxyaryl group and an organic solvent not dissolving the negative resist pattern. In the formation method, the fine pattern-forming composition and the resist composition are individually cast with the same coating apparatus, so as to prevent pipe blockages.