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Composition for resist lower layer film formation for lithography and process for producing semiconductor device

一种抗蚀剂下层、组合物的技术，应用在半导体/固态器件制造、图纹面的照相制版工艺、用于光机械设备的光敏材料等方向，能够解决没有记载等问题

Inactive Publication Date: 2010-07-28
NISSAN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Patent Document 4 does not describe that polysilane is suitable for use in resist underlayer films (antireflection films).

Method used

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  • Composition for resist lower layer film formation for lithography and process for producing semiconductor device
  • Composition for resist lower layer film formation for lithography and process for producing semiconductor device
  • Composition for resist lower layer film formation for lithography and process for producing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0066] Prepare a toluene solution containing a concentration of 10% by mass of the following compound having structural units represented by the following formula (6a) and formula (7a) and having a silanol group, a hydrogen atom, and a chlorine atom at the end. Polysilane compound (manufactured by Osaka Gas Chemical Co., Ltd., brand name SI-2030, weight average molecular weight 2200, number average molecular weight 1400).

[0067]

[0068] The chlorine atom at the terminal is an impurity derived from the raw material for synthesizing the polysilane. 2.04 g of 1-adamantanol (manufactured by Tokyo Chemical Industry Co., Ltd.) and 0.40 g of nickel chloride were added to 20.00 g of this toluene solution, and stirred at room temperature for 17 hours. Then nickel chloride was removed by filtration, the solvent (toluene) was distilled off under reduced pressure, and vacuum-dried at 80° C. for 10 hours. Yield 2.36 g. The amount of adamantane ring introduced into the obtained poly...

Synthetic example 2

[0070] Add α- 1.37 g of hydroxy-γ-butyrolactone and 0.34 g of nickel chloride were stirred at room temperature for 17 hours. Then nickel chloride was removed by filtration, the solvent (toluene) was distilled off under reduced pressure, and vacuum-dried at 80° C. for 10 hours. Yield 2.48g. The amount of 5-membered ring lactone introduced into the obtained polymer was 19% by mass relative to 100% by mass of the raw material polysilane compound before reacting with α-hydroxy-γ-butyrolactone.

Embodiment 1

[0072] To 0.40 g of the polymer obtained in Synthesis Example 1, 9.60 g of propylene glycol monomethyl ether acetate was added to obtain a 4.0% by mass solution. Then, it was filtered using a polyethylene microfilter with a pore size of 0.1 μm to prepare a solution as a composition for forming a resist underlayer film.

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Abstract

The invention provides a composition for resist lower layer film formation, which can be evenly coated and can suppress the occurrence of a sublimate in heat curing. There is also provided a composition for forming a resist lower layer film having a large dry etching selection ratio relative to an upper layer resist. A composition for resist lower layer film formation for lithography, comprising a polysilane compound having a unit structure represented by formula (1) [Chemical formula 1] (1) wherein R1 and R2 each independently represent a group represented by -X-Y, wherein X represents an oxygen atom, an alkylene group having 1 to 18 carbon atoms, or -OCnH2n- wherein n is an integer of 1 to 18; and Y represents a lactone ring or an adamantane ring, orone of R1 and R2 represents a group represented by -X-Y while the other represents an aryl group, a methyl group, an ethyl group, or a cycloalkyl group having 3 to 6 carbon atoms, and a composition for resist lower layer film formation for lithography, comprising an organic solvent.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film containing a polysilane compound, which is used in a photolithography process in the manufacturing process of a semiconductor device and can be used for a resist underlayer film formed between a semiconductor substrate and a resist thing. Background technique [0002] In recent years, along with the development of high integration of semiconductor elements, miniaturization of patterns of wiring and the like has been demanded. In order to form a fine pattern, a resist pattern is formed using short-wavelength light such as an ArF excimer laser (wavelength: 193 nm) as a light source for exposure. [0003] The larger the aspect ratio (height / width) of the resist pattern, the more likely pattern collapse occurs. In order to prevent pattern collapse, it is necessary to reduce the thickness of the resist film. However, a resist pattern formed of a resist having a thin film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11G03F7/26
CPCC08G77/60C09D183/16G03F7/0752G03F7/11
Inventor 今村光境田康志中岛诚竹井敏
Owner NISSAN CHEM CORP
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