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30results about How to "High dissolution contrast" patented technology
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Patterning process
ActiveUS20110177462A1High dissolution contrastHigh dimensional control accuracyPhotosensitive materialsPhotomechanical exposure apparatusOrganic solventHigh energy
A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive / negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.
Owner:SHIN ETSU CHEM IND CO LTD
Patterning process, resist composition, and acetal compound
InactiveUS20110236826A1High dissolution contrastHigh sensitivityOrganic chemistryOrganic compound preparationHigh energyRadiation
A pattern is formed by applying a resist composition comprising a polymer comprising recurring units having an acid labile group-substituted hydroxyl group, an acid generator, and an organic solvent onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation to define exposed and unexposed regions, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.
Owner:SHIN ETSU CHEM CO LTD
Patterning process
ActiveUS20120009529A1High dissolution contrastIncrease contrastPhotomechanical exposure apparatusMicrolithography exposure apparatusResistMeth-
A pattern is formed by applying a resist composition comprising a (meth)acrylate copolymer comprising both recurring units having an acid labile group-substituted carboxyl group and recurring units having a lactone ring, an acid generator, and an organic solvent onto a substrate, prebaking the composition to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with a developer. The developer comprises at least 40 wt % of an organic solvent selected from methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate.
Owner:SHIN ETSU CHEM IND CO LTD
Patterning process and resist composition
ActiveUS20140322650A1High dissolution contrastImprovement in resist performance factorPhotosensitive materialsPhotomechanical exposure apparatusPolymer scienceOrganosolv
A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R1 is H, F, CH3 or CF3, Z is a single bond, phenylene, naphthylene, or (backbone)-C(═O)—O—Z′—, Z′ is alkylene, phenylene or naphthylene, XA is an acid labile group, YL is H or a polar group. In formula (3), R2 and R3 are a monovalent hydrocarbon group, R4 is a divalent hydrocarbon group, or R2 and R3, or R2 and R4 may form a ring with the sulfur, L is a single bond or a divalent hydrocarbon group, Xa and Xb are H, F or CF3, and k is an integer of 1 to 4.
Owner:SHIN ETSU CHEM IND CO LTD
Patterning process and resist composition
ActiveUS20120308930A1High dissolution contrastSuppressing acid diffusionPhotosensitive materialsElectric discharge tubesPolymer scienceOrganic solvent
A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group and / or hydroxy group and recurring units having an oxirane or oxetane ring, an acid generator, and an organic solvent displays a high dissolution contrast in organic solvent development and controlled acid diffusion. A fine hole pattern featuring good size control can be formed.
Owner:SHIN ETSU CHEM IND CO LTD
Negative resist composition and patterning process
ActiveUS9023587B2High dissolution contrastHigh sensitivityPhotosensitive materialsRadiation applicationsResistImage resolution
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180101094A1Great acid diffusion suppressing effectMinimal LWROrganic compound preparationSemiconductor/solid-state device manufacturingResistIndium
A resist composition comprising a base polymer and a metal salt of carboxylic acid or sulfonamide is provided, the metal being selected from calcium, strontium, barium, cerium, aluminum, indium, gallium, thallium scandium, and yttrium. The resist composition exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Chemically amplified resist composition and patterning process
ActiveUS20180143532A1High dissolution contrastMinimal LWRPhotomechanical exposure apparatusPhotosensitive material processingResistImage resolution
A chemically amplified resist composition comprising a quencher containing a quaternary ammonium iodide, dibromoiodide, bromodiiodide or triiodide, and an acid generator exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Monomer, polymer, resist composition, and patterning process
ActiveUS20140045123A1Improve lipophilicityHigh dissolution contrastOrganic chemistryElectric discharge tubesResistPolymer chemistry
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20170205709A1High dissolution contrastHigh resolutionOrganic chemistrySemiconductor/solid-state device manufacturingResistDissolution
A resist composition comprising a base polymer and a sulfonium salt capable of generating fluorinated aminobenzoic acid offers a satisfactory dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180088463A1High dissolution contrastMinimal LWRPhotomechanical coating apparatusPhotomechanical exposure apparatusRubidiumCerium
A resist composition comprising a base polymer and a metal salt of an iodinated aromatic group-containing carboxylic acid, the metal being selected from among sodium, magnesium, potassium, calcium, rubidium, strontium, cesium, barium, cobalt, nickel, copper, zinc, cadmium, tin, antimony, zirconium, hafnium, cerium, aluminum, and indium, exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20180081268A1Minimal LWRHigh dissolution contrastPhotomechanical coating apparatusPhotomechanical exposure apparatusResistImage resolution
A resist composition comprising an alkali metal salt of tetraiodophenolphthalein, tetraiodophenolsulfonphthalein or tetraiodofluorescein exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing
ActiveUS20080311514A1Convenient introductionHigh dissolution contrastSilicon organic compoundsPhotosensitive materialsSide chainSiloxane
In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
InactiveUS20170075218A1High dissolution contrastHigh resolutionPhotomechanical coating apparatusPhotomechanical exposure apparatusResistNitrogen
A resist composition comprising a base polymer and a sulfonium salt of carboxylic acid containing nitrogenous heterocycle offers dimensional stability on PPD and a satisfactory resolution.
Owner:SHIN ETSU CHEM IND CO LTD
Patterning process, resist composition, polymer, and polymerizable ester compound
ActiveUS20130157194A1High dissolution contrastIncrease contrastOrganic chemistryPhotosensitive materialsCompound aSolubility
A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer adapted to form a lactone ring under the action of an acid so that the polymer may reduce its solubility in an organic solvent developer, an acid generator, and an organic solvent displays a high dissolution contrast between the unexposed region of promoted dissolution and the exposed region of inhibited dissolution.
Owner:SHIN ETSU CHEM IND CO LTD
Patterning process
ActiveUS8722321B2High dissolution contrastHigh dry etch resistanceSemiconductor/solid-state device manufacturingPhotosensitive material processingOrganic solventHigh energy
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200218154A1High dissolution contrastWide depth of focusPhotomechanical exposure apparatusPhotosensitive material processingSolventChemical compound
The present invention is a resist composition comprises a polymer compound having one or two repeating units selected from repeating units represented by the following general formulae (p-1), (p-2) and (p-3), a repeating unit represented by the following formula (a-1) and the formula (a-2) polarities of which are changed by an action of an acid, and a repeating unit represented by the following formula (b-1); a salt represented by the following general formula (B); and a solvent, wherein a difference of a C log P of the repeating unit (a-1) before and after changing the polarity is 3.0 to 4.5, and a difference of a C log P of the repeating unit (a-2) before and after changing the polarity is 2.5 to 3.2. This provides a resist composition which has high sensitivity, wide DOF and high resolution, reduces LER, LWR and CDU, and has good pattern shape after exposure and excellent etching resistance.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition and patterning process
ActiveUS20200301275A1High dissolution contrastExcellent in ability to insolubilize its exposed portionPhotomechanical exposure apparatusPhotosensitive material processingPolymer scienceOnium
A chemically-amplified negative resist composition includes: (A) an acid generator containing an onium salt (s) shown by the following formula(e) (A-1) and / or (A-2); and (B) a base polymer containing repeating units shown by the following formulae (B1) and (B2). Thus, the present invention provides: a chemically-amplified negative resist composition which provides a pattern with high sensitivity, low LWR and CDU, and favorable profile; and a resist patterning process using the composition.
Owner:SHIN ETSU CHEM IND CO LTD
Chemically amplified resist composition and patterning process
ActiveUS20200050104A1Large light absorptionHigh dissolution contrastPhotomechanical exposure apparatusPhotosensitive materials for photomechanical apparatusSimple aromatic ringCarboxylic acid
A chemically amplified resist composition comprising a quencher containing an ammonium salt of an iodized or brominated aromatic ring-bearing carboxylic acid, and an acid generator exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Onium salt, chemically amplified negative resist composition, and pattern forming process
PendingUS20210395195A1Minimal top lossDissolution contrastOrganic chemistrySemiconductor/solid-state device manufacturingPolymer scienceHalogen
An onium salt having a partial structure of formula (A) is provided wherein Ra1 and Ra2 are hydrogen or a C1-C10 hydrocarbyl group in which hydrogen may be substituted by halogen and —CH2— may be replaced by —O— or —C(═O)—, both Ra1 and Ra2 are not hydrogen at the same time, Ra1 and Ra2 may bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Chemically amplified resist composition and patterning process
PendingCN110824840AHigh resolutionIncreased sensitivityPhotomechanical exposure apparatusPhotosensitive materials for photomechanical apparatusCarboxylic acidPhotochemistry
Owner:SHIN ETSU CHEM CO LTD
Patterning process
ActiveUS8691494B2High dissolution contrastHigh dry etch resistancePhotosensitive materialsSemiconductor/solid-state device manufacturingMeth-Organic solvent
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
ActiveUS20200285149A1High dissolution contrastWide focus marginPhotomechanical exposure apparatusPhotosensitive material processingPolymer scienceImage resolution
A resist composition is provided comprising a base polymer and a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene salt of an iodized aromatic group-containing N-carbonysulfonamide. The salt is effective for sensitizing and suppressing acid diffusion and prevents any film thickness loss after development. The resist composition is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.
Owner:SHIN ETSU CHEM IND CO LTD
Chemically amplified resist composition and patterning process
ActiveUS20210048747A1High dissolution contrastMinimal LWRPhotomechanical exposure apparatusPhotosensitive material processingPhenolPhotochemistry
Owner:SHIN ETSU CHEM IND CO LTD
Onium salt, chemically amplified negative resist composition, and pattern forming process
ActiveUS20220113626A1Minimal top lossDissolution contrastOrganic chemistryPhotosensitive material processingPhysical chemistryOnium
An onium salt containing an anion having formula (A1) and a cation having formula (A1-a), (A1-b) or (A1-c) is provided. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.
Owner:SHIN ETSU CHEM IND CO LTD
Alcohol compound, chemically amplified negative resist composition, and resist pattern forming method
PendingCN114656341AImprove hydrophilicityReduce solubilityOrganic chemistryPhotosensitive material processingAlcoholCross linker
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
PendingUS20210080828A1High dissolution contrastWide focus marginPhotosensitive material processingCoatingsPolymer scienceImage resolution
A resist composition comprising a base polymer and a salt is provided. The salt consisting of an anion derived from an iodized or brominated phenol and a cation derived from a 2,5,8,9-tetraaza-1-phosphabicyclo[3.3.3]undecane, biguanide or phosphazene compound. The resist composition exerts a high sensitizing effect and an acid diffusion suppressing effect, causes no film thickness loss after development, and is improved in resolution, LWR and CDU when a pattern is formed therefrom by lithography.
Owner:SHIN ETSU CHEM IND CO LTD
Resist composition, pattern forming process, polymer, and monomer
ActiveUS20170184967A1High dissolution contrastImprove dof margin and mefOrganic chemistryRadiation applicationsRepeat unitMonomer
A polymer comprising recurring units containing a specific lactone ring and having an alkyl group on γ-butyrolactone skeleton of fused ring lactone and an alkyl ester substituent group intervening between the lactone structure and the polymer backbone is provided. A resist composition comprising the polymer as base resin is improved in such properties as DOF margin and MEF and quite effective for precise micropatterning.
Owner:SHIN ETSU CHEM CO LTD
Resist composition and patterning process
ActiveUS20180239249A1High dissolution contrastHigh resolutionPhotosensitive materials for photomechanical apparatusBenzoic acidPolymer science
A resist composition comprising a base polymer and a quencher in the form of an iodonium salt of fluorinated aminobenzoic acid, fluorinated nitrobenzoic acid or fluorinated hydroxybenzoic acid offers a high dissolution contrast and minimal LWR independent of whether it is of positive or negative tone.
Owner:SHIN ETSU CHEM IND CO LTD
Chemically amplified resist composition and patterning process
PendingUS20210033969A1High dissolution contrastMinimal LWRPhotomechanical exposure apparatusPhotosensitive material processingAmmoniumPhotochemistry
A chemically amplified resist composition comprising a quencher containing an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group exclusive of an iodized or brominated aromatic ring and an acid generator exerts a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having satisfactory resolution, LWR and CDU.
Owner:SHIN ETSU CHEM IND CO LTD
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