Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Chemically amplified resist composition and patterning process

一种化学增幅、抗蚀剂的技术，应用在光学、图纹面的照相制版工艺、用于光机械设备的光敏材料等方向，能够解决感光度降低等问题

Pending Publication Date: 2020-02-21
SHIN ETSU CHEM CO LTD
View PDF26 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the acid diffusion distance decreases, the LWR decreases, but the sensitivity decreases
For example, as the PEB temperature decreases, the result is a decrease in LWR but a decrease in ISO
As the addition of quencher increases, the result is a decrease in LWR but a decrease in sensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemically amplified resist composition and patterning process
  • Chemically amplified resist composition and patterning process
  • Chemically amplified resist composition and patterning process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0282] Examples of the invention are given below by way of illustration and not by way of limitation. The abbreviation "pbw" means parts by weight.

[0283] Quencher 1-22, amine compound 1, and carboxylic acid 1 used in the resist composition have the structures shown below. Quenchers 1-22 were prepared by neutralization of ammonium hydroxide or amine compounds providing the cations shown below with carboxylic acids bearing iodo or bromo aromatic rings providing the anions shown below.

[0284]

[0285]

Synthetic example

[0287] Synthesis of base polymers (polymers 1-3)

[0288] The base polymer was prepared by combining appropriate monomers, performing their copolymerization reaction in a tetrahydrofuran (THF) solvent, pouring the reaction solution into methanol to crystallize, repeatedly washing with hexane, separating and drying. For the resulting polymers denoted polymers 1-3, using 1 Composition was analyzed by H-NMR spectroscopy, and Mw and Mw / Mn were analyzed by GPC using THF solvent relative to polystyrene standards.

[0289]

Embodiment 1-27 and comparative example 1-7

[0291] Preparation of resist composition

[0292] A resist composition was prepared by dissolving each component in a solvent according to the formulation described in Tables 1-3, and filtering through a filter having a pore size of 0.2 μm. The solvent contained 100 ppm of surfactant FC-4430 (3M). The components in Tables 1-3 are shown below.

[0293] Base polymer: Polymer 1-3 of the above formula

[0294] Organic solvents:

[0295] PGMEA (Propylene Glycol Monomethyl Ether Acetate)

[0296] CyH(cyclohexanone)

[0297] PGME (Propylene Glycol Monomethyl Ether)

[0298] Acid generator: PAG 1 to PAG 4 of the following structural formula

[0299]

[0300] Comparing Quenchers 1-5:

[0301]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

The present invention provides a chemically amplified resist composition and a patterning method. The chemically amplified resist composition comprises a quencher containing an ammonium salt of an iodized or brominated aromatic ring-bearing carboxylic acid, and an acid generator exhibits a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having improved resolution, LWR and CDU.

Description

[0001] Cross References to Related Applications [0002] This non-provisional application claims priority under 35 U.S.C. §119(a) to Patent Application No. 2018-150146 filed in Japan on August 9, 2018, the entire contents of which are hereby incorporated herein by reference. technical field [0003] The present invention relates to a chemically amplified resist composition and a patterning method using the same, the chemically amplified resist composition comprising: a quencher containing an ammonium salt of a carboxylic acid having an iodo or bromo aromatic ring; and acid generator. Background technique [0004] In order to meet demands for higher integration density and operating speed of LSIs, efforts to reduce pattern sizes are rapidly advancing. The broadly expanding flash memory market and the need for increased storage capacity are driving the development of miniaturization technologies. As an advanced miniaturization technique, the fabrication of microelectronic d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004
CPCG03F7/004G03F7/0045G03F7/0382G03F7/0392G03F7/0397G03F7/039G03F7/20G03F7/2004G03F7/027
Inventor 畠山润大桥正树
Owner SHIN ETSU CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com