72results about How to "Eliminate Diffusion" patented technology

An electrochemical method and apparatus for high-amperage electrical energy storage features a high-temperature, all-liquid chemistry. The reaction products created during charging remain part of the electrodes during storage for discharge on demand. In a simultaneous ambipolar electrodeposition cell, a reaction compound is electrolyzed to effect transfer from an external power source; the electrode elements are electrodissolved during discharge.

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

A fuel delivery rail assembly for supplying fuel to a plurality of fuel injectors in an engine is provided. The assembly includes an elongate conduit having a longitudinal fuel passage therein, a fuel inlet pipe, and a plurality of sockets. One wall of the conduit opposite to the socket mounting wall includes a flat or arcuate flexible absorbing surface. A high-frequency noise suppressing device such as a binding member is fixed within the conduit for connecting the one wall and the socket mounting wall. The binding member includes is comprised of a pipe, a bar or a rigid block. The binding member may be a body portion of an extending socket terminating with the one wall. Thus, fuel pressure pulsations and shock waves are reduced by bending of the absorbing surface, and emission of high-frequency noise is eliminated.

A fuel delivery rail assembly for supplying fuel to a plurality of fuel injectors in an engine includes an elongated conduit having a longitudinal fuel passage therein, a fuel inlet pipe, and a plurality of sockets. One wall of the conduit opposite to the socket mounting wall includes a flat or arcuate flexible absorbing surface. A high-frequency noise suppressing component such as a rib, a cavity or a clamp is applied to the one wall opposite to the absorbing surface. Thus, fuel pressure pulsations and shock waves are reduced by bending the absorbing surface, and emission of high-frequency noise is eliminated.

A diffusion barrier alloy film has a diffusion barrier layer which has more excellent diffusion barrier properties than an Re—Cr alloy film, and can stand usage at higher temperatures (e.g., 1150° C. or higher). The diffusion barrier layer 18 is made of an Re—W alloy σ phase containing 12.5 to 56.5% of. W in terms of atomic composition and the remainder of Re excluding unavoidable impurities. A metal base 10 has a surface coated with a diffusion barrier layer 18. If required, the diffusion barrier layer 18 has a surface coated with a diffusion alloy layer 20 containing 10% or greater and less than 50% of Al, Cr, or Si in terms of atomic composition, providing a high-temperature apparatus member.

The invention discloses a natural gas catalytic pyrolysis hydrogen production catalyst and a preparation method thereof. The natural gas catalytic pyrolysis hydrogen production catalyst takes MOyCNFs as a carrier to load an active component Ni; wherein, the weight portions of each component are as follows: 10 to 50 portions of Ni element, 5 to 70 portions of MOy and 2 to 45 portions of CNFs; the preparation method is as follows: the MOy and pretreated CNFs are added into water solution of nickel salt, then a soda lye is added to adjust the pH value between 6 and 8; then the mixture is stirred and stood; the obtained deposit is filtered, washed and dried, thus obtaining the catalyst. The catalyst has the advantages of high methane conversion rate, high carbon deposit resistance and good stability. The invention belongs to the field of natural gas hydrogen production.

The invention discloses a tracking system of a satellite-ground quantum communication link direction, aiming at the application background of the high-precision beaconing tracking of satellite-groundquantum communication, and provides a real-time high-precision high-bandwidth beaconing detection and information acquiring system of FPGA hardware image processing and information extraction based ona CMOS or CCD detector and adopts an integrated design method. The invention also proposes a beaconing facula image processing method with the combination of facula shaping and position extraction, inhibits the interrupting influence of an atmosphere turbulence signal channel between a satellite and the ground on the beaconing facula, and improves the tracking and pointing precision, bandwidth and stability of a capturing tracking system. Under the condition that the atmosphere turbulence exists, the detection precision of the system on beaconing laser is better than 0.5 mu rad, and the detection bandwidth is higher than 2.5 kHz. The invention satisfies the requirement of the satellite-ground quantum communication capturing tracking system, in particular a satellite-carried terminal.

A preparation method of gate oxide includes the steps of providing a silicon substrate, conducting thermal oxidation treatment, implementing a technology for heating processing to form silicon dioxide gate oxide, conducting nitrogen injection on the silicon dioxide gate oxide by using a plasma nitriding technology to form SiON gate oxide, conducting laser treatment on the surface of the SiON gate oxide by using a laser rapid annealing technology, and conducting high temperature annealing on the SiON gate oxide with the surface being treated in a laser mode. According to the preparation method of the gate oxide, before high temperature annealing is conducted on the SiON gate oxide, the laser rapid annealing technology is introduced for conducting the laser treatment on the surface of the SiON gate oxide, an intrinsic oxide layer is removed, the bad influence of organic matter absorption on nitrogen doping is prevented, moreover, the formed non-crystallizing surface can prevent surface nitrogen atoms from volatilizing, and meanwhile the nitrogen atoms can be stopped from diffusing towards an SiO2 / Si interface. Therefore, high and stable nitrogen content can be guaranteed, accurate clipping of the dielectric coefficient of SiON gate media is achieved, and the electrical properties of devices can be effectively improved.

The invention provides a method for continuously preparing a nanoflower lithium ion battery layered anode material and a reaction kettle realizing the method. The method includes: (1), preparing a: preparing raw materials according to a chemical formula LiNixCoyMn1-x-yO2; (2), co-precipitating: using a co-precipitation method to obtain a reaction product, and subjecting the reaction product to aging, filtering, washing and drying to obtain precursor particles of a nanoflower structure; (3), calcining:calcining the precursor particles at high temperature to obtain the nanoflower lithium ion battery layered anode material. A template agent does not need to be added in the preparation process, and the particles are controllable in size, uniform in distribution and high in uniformity. Three layers of stirring paddles are arranged in the reaction kettle and stir at the same time, so that the materials are quick and uniform in reaction, and the particles are uniform and high in fluidity. By using the method, the lithium ion battery anode material in special nanoflower shape; the method is simple to operate, the reaction kettle is stable and reliable in structure, and industrial production is facilitated.

The invention discloses an image encryption method based on the projection synchronization of a hyperchaotic system. The method comprises the steps of plaintext image quantifying and ciphertext image quantifying. The first step comprises generating of a hyperchaotic sequence of a hyperchaotic driving system, image row scrambling, image column scrambling, image diffusing, circulation image row scrambling, image column scrambling, multiple rounds of image diffusing, and a ciphertext image is acquired. The second step comprises ciphertext image quantifying, generating of a hyperchaotic sequence of a hyperchaotic response system, time acquiring, column scrambling index and line scrambling index valuing, image inverse diffusing, image inverse column scrambling, image inverse row scrambling, circulation image inverse diffusing, image inverse column scrambling, multiple rounds of image inverse row scrambling, and a decrypted image is acquired. According to the invention, a feedback mechanism with the current image is introduced; the row (column) scrambling address code and the key matrix are dynamically changed in each round of encryption; experiments show that the method has the advantages of good encryption effect, high security and large key space, can resist selected plaintext attacks, known plaintext attacks and various statistical attacks.

A W-Cu-Ni alloy having thermophysical properties suitable for use in electrical contacts and electrodes is described. The alloy is formed by direct sintering of a powder blend comprising a tungsten-copper composite powder and a nickel powder. The tungsten-copper composite powder component of the blend comprises individual dual phase particles having a copper phase and a tungsten phase wherein the tungsten phase substantially encapsulates the copper phase. The method for direct sintering the W-Cu-Ni alloy substantially eliminates the formation of brittle intermetallics and slumping during sintering.

The invention relates to a slide-valve vacuum pump suitable for a tile vacuum extruder, belongs to the technical field of vacuum pumps, is suitable for the industries of building materials, chemical engineering, medicines, electrons and ceramics as vacuum extraction equipment, and is especially suitable for the slide-valve vacuum pump used in the tile vacuum extruder. The slide-valve vacuum pump comprises an air inlet fine filter, a one-way check valve, a pump body, a one-piece slide bar and sliding sleeve, an eccentric wheel, a one-piece slide block, a main shaft, a belt pulley, a belt, a motor, an exhaust valve, a first exhaust oil-gas separation chamber, a second exhaust oil-gas separation chamber, a third exhaust oil-gas separation chamber, a pump oil cyclic cooling device and a base; the air inlet fine filter is arranged on a vacuum pump air inlet pipe on one side of the pump body through the one-way check valve; the air inlet fine filter comprises a shell, a fine filter filtering element, an air passing pipe, a cover board and a seal ring; and the one-way check valve comprises a valve body, a one-way check valve air inlet, a one-way check valve air outlet, a one-way check valve core, a valve core mounting base and a spring.

A composite barrier layer formed between a glass film and active regions of a memory device is disclosed. The composite barrier layer comprises an oxide layer formed by atomic deposition process and an insulating layer, for example a nitride barrier layer, formed over the oxide layer. The composite barrier layer eliminates the diffusion of impurity atoms from the glass film into the active regions of the device.

There is provided a laminate used as an underlayer layer for a photoresist in a lithography process of a semiconductor device and a method for manufacturing a semiconductor device by using the laminate. The method comprising: laminating each layer of an organic underlayer film (layer A), a silicon-containing hard mask (layer B), an organic antireflective film (layer C) and a photoresist film (layer D) in this order on a semiconductor substrate. The method also comprises: forming a resist pattern in the photoresist film (layer D); etching the organic antireflective film (layer C) with the resist pattern; etching the silicon-containing hard mask (layer B) with the patterned organic antireflective film (layer C); etching the organic underlayer film (layer A) with the patterned silicon-containing hard mask (layer B); and processing the semiconductor substrate with the patterned organic underlayer film (layer A).

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

The invention discloses an aluminum alloy cast ingot uniform heat treatment method of tin pot body, which comprises the following steps: (1)making mass percent of alloy as 0.20 Si, 0.52 Fe, 0.18 Cu, 1.02 Mn and 1.23 Mg; setting the other single element not bigger than 0.05 and major total not bigger than 0.15; making the surplus as Al; casting the tin pot body with aluminum alloy; proceeding high-temperature uniform treatment in propulsion heating furnace with cooling device; controlling the temperature at 550-620 deg.c and keeping temperature time at 12-24h; forced-cooling to 460-500 deg.c with cooling speed at 20-60 deg.c / h; (2) controlling heat treatment of evolution phase in the same heating furnace; controlling the temperature at 450-500 deg.c and time at 6-12 h. This invention provides support for high quality production of AA3104 aluminum alloy sheet.

The invention discloses a rotary-vane efficient energy-saving environmental-friendly vacuum pump, relates to a rotary-vane vacuum pump for a tile vacuum-extruder, belongs to the technical field of vacuum pumps and is suitable for being used as vacuuming equipment for standby use in building material industry, chemical industry, medicine industry, electronic industry, ceramics industry and the like, especially suitable for the rotary-vane vacuum pump used for the tile vacuum-extruder. The rotary-vane efficient energy-saving vacuum pump comprises a gas-water separator, an air filter, a pump body stator, a rotator, rotary vanes, a vent valve assembly, a side-placed oil tank, an air-cooled oil-pumping cooler, a venting oil mist filter, a centrifugal fan, a housing, a frame and a motor, wherein the gas-water separator comprises a cylinder body, a clapboard, a netting filter net cylinder and a cone river diversion port; the air filter is provided with a filter cylinder body which is internally provided with an exhaust duct; the filter cylinder body is internally provided with a filter core assembly; and the centrifugal fan is arranged on a coupler, the housing is arranged on the outer sides of the pump body and the air-cooled oil-pumping cooler, so as to form an air-cooled oil-pumping cooler and a pump body cooling air duct.

The invention relates to a clean energy utilization method for municipal solid wastes, belonging to the technical field of municipal solid waste treatment and utilization. The process comprises the following steps of: crushing municipal solid wastes and then mixing the municipal solid wastes with coal, wherein the weight ratio of the municipal solid wastes is 20-70 percent; then carrying out heat melting moulding processing to prepare blocks; and carrying out high-temperature pyrolytic carbonization under the airtight, high-temperature and reducing atmosphere by utilizing a coking production facility system, wherein pyrolytic carbonization products are respectively clean high-heat value fuels of solid coke, liquid tar and gas. The invention has the advantages that the municipal solid wastes with complicated components can be treated, complicated municipal waste sorting processes are not needed, the wastes are converted into the high value-added fuels, and meanwhile, the problem of dioxin pollution which is easy to generate in conventional waste energy treatment (the wastes are incinerated to generate electricity) is avoided, thereby having bigger popularization meaning.

The invention relates to design optimization of microprocessors using spare driver outputs for discrete input interfaces. An output driver or pre-FET driver is used to interface a discrete input for a microprocessor. To read the discrete interface, a fault detection mechanism of the pre-FET driver or the output driver is used. Monitoring the fault register of the output driver allows the condition of the external switch to be understood. The circuit is able to read either a switched to battery type interface or a switched to ground type interface, thereby eliminating hardware proliferation. The fault register is read through a serial peripheral interface (SPI) bus, thereby removing the need for a dedicated microprocessor pin required for the interface. Toggling the gate in the pre-FET driver interface permits adding diagnostic capability for the discrete input interface.

The invention discloses a dust-removing device special for construction. The device comprises a frame, a suction hood, an air feeding pipeline, a dust-removing box and a humidifying box, wherein the suction hood is arranged on a base plate of the frame through a suction hood mounting base; a bulb connecting hole is formed at the top of the suction hood mounting base; a universal ball which is in rotating fit with the bulb connecting hole is arranged in the bulb connecting hole; the universal ball is fixed on an end part of the suction hood through a rod; an expansion link is fixed on the surface of the suction hood; the bottom end of the expansion link is resisted against the base plate of the frame; a first fan is arranged in the suction hood; the suction hood is connected with the dust-removing box used for removing dust from air through the air feeding pipeline; and an outlet of the dust-removing box is connected with the humidifying box used for humidifying air. The dust-removing device special for construction has the beneficial effects that air containing a large amount of dust enters into the suction hood, enters into the dust-removing box through the air feeding pipeline, is de-dusted and then is humidified by the humidifying box and then is exhausted, so that the flying dust is reduced, the dust diffusion is eliminated and the environment is improved.

The invention concerns a device (100) for the detection and / or quantitative analysis of hydrogen, intended for monitoring an installation (1). Said device (100) comprises a first measuring optical fibre (10) intended to equip the installation (1), and an optical system (20) optically connected to the first measuring optical fibre (10) and adapted to measure the variation in at least one parameter of the first measuring optical fibre (10). The optical system (20) is adapted to measure the parameter along the first optical fibre (10) according to the principle of Brillouin measurement. The invention also concerns a method using such a device (100).

The invention provides a TMR read sensor with low-contact-resistance metal / metal, metal / oxide and oxide / metal interfaces. The low-contact-resistance metal / metal interfaces in a reference or sense layer structure are in-situ formed in a high-vacuum deposition module of a sputtering system, without exposures to low vacuum in a transfer module and damages caused by a plasma treatment conducted in an etching module. The low-contact-resistance metal / oxide interface is formed by utilizing a thin Co—Fe—B reference layer and a thick Co—Fe reference layer to reduce boron diffusion and segregation caused by annealing. The low-contact-resistance oxide / metal interface is formed by replacing a Co—Fe—B sense layer with a Co-rich Co—Fe sense layer to eliminate boron diffusion and segregation caused by annealing. With the low-contact-resistance metal / metal, metal / oxide and oxide / metal interfaces, the TMR read sensor exhibits a junction resistance-area product of below 0.6 Ω-μm2, while maintaining a low ferromagnetic coupling field and a high TMR coefficient.

A method for fabricating a semiconductor device. Specifically, a method that includes forming a source and drain region in a periphery transistor, exhibiting a channel width between the source and drain regions suitable for operation at predetermined voltages. After forming the source and drain regions, to eliminate diffusion of lightly doped drain regions resulting from a later formation of the source and drain regions, forming the lightly doped drain regions adjacent to the source and drain regions of the periphery transistor. After forming the lightly doped drain regions in the periphery transistor, the method includes forming a source region and a drain region in a core memory cell, independent of forming the source and drain regions in the periphery transistor.

The invention relates to the use of a so-called flash-sintering technique for the synthesis and densification of iodine apatites or iodoapatites. The invention can be used in the recycling of used nuclear fuel for conditioning and storing into apatite the radioactive iodine present in the aqueous effluents from said recycling, in particular iodine 129.

The invention provides a method for preparing barium strontium titanate thin film material. The method adopts Ba(dfhd)2(tetraglyme), Sr(dfhd)2(tetraglyme) and TTIP-Ti(OC3H7)4 as the precursors; oxygen is taken as the reacting gas; argon is taken as the carrier gas; barium strontium titanate (BST) thin film is rapidly deposited by adopting a two-stage growth method, namely the arium strontium titanate (BST) thin film is in nucleation stage at the temperature of 650 to 700 DEG C, and is in growth stage at the temperature of 800 to 850 DEG C; then heat treatment is performed in an oxygen atmosphere at the temperature of 400 to 600 DEG C. Because quick temperature rise is adopted from the nucleation stage to the growth stage, non ideal nucleation and diffusion process can be eliminated. BST thin film with high orientation and even granule size is obtained by adopting the method. The thin film is an ideal material used for the dynamic random access memory, the monolithic microwave integrated circuit, the dielectric phase shifter and the uncooled infrared focal plane array.

The invention provides a semiconductor device and a manufacturing method therefor and an electronic apparatus, and relates to the technical field of a semiconductor. The manufacturing method comprisesthe steps of providing a semiconductor substrate, and forming a first fin structure, a second fin structure and a third fin structure in a pull-up transistor region, a pull-down transistor region anda transmission gate transistor region of the semiconductor substrate respectively; removing a first pseudo gate structure and a second pseudo gate structure to form a first gate groove and a second gate groove; forming a first P type work function layer at the bottom and on the side wall of the first gate groove in the pull-up transistor region; forming a second P type work function layer at thebottom and on the side wall of the first gate groove; forming a third P type work function layer at the bottoms and on the side walls of the first gate groove and the second gate groove in the pull-down transistor region; and forming an N type work function layer at the bottoms and on the side walls of the first gate groove and the second gate groove.

A crystal growth apparatus comprises a reaction vessel holding a melt mixture containing an alkali metal and a group III metal, a gas supplying apparatus supplying a nitrogen source gas to a vessel space exposed to the melt mixture inside the reaction vessel, a heating unit heating the melt mixture to a crystal growth temperature, and a support unit supporting a seed crystal of a group III nitride crystal inside the melt mixture.

The invention relates to a rotary-vane vacuum pump suitable for a tile vacuum extruder, which belongs to the technical field of vacuum pumps and is suitable for industries such as building materials, chemical engineering, medicines, electronics, ceramics and the like to be used as vacuumizing equipment and is especially suitable for being used in a tile vacuum extruder. The rotary-vane vacuum pump comprises an air inlet filter, a pump body stator, a rotor, a rotary vane, an exhaust valve assembly, a side-arranged oil tank, an exhaust oil mist filter, an oil temperature control system, a motorsupport seat, a motor and an electric control box, wherein the side-arranged oil tank is connected to the rear side of a pump body and is divided into an oil tank upper cavity and an oil tank lower cavity, the oil tank lower cavity is provided with an oil pumping filtering screen, and the oil tank upper cavity is provided with the exhaust oil mist filter; the pumping oil temperature control system comprises a pumping oil temperature sensor, an electronic temperature controller, an air-cooled pumping oil cooler and an electric heater additionally arranged in the oil tank; the air-cooled type pumping oil cooler comprises a pumping oil cooler, a fan and a motor; and the air inlet filter is provided with a vertical cylindrical cylinder.

The invention discloses a transmission method of a TS0 time slot signal, comprising: an RRU in a high-speed rail cell transmits a common channel signal and a preset pilot signal that lasts for the entire TS0 time slot on the TS0 time slot, wherein the common channel signal and The pilot signals are on mutually orthogonal code channels; the high-speed rail repeater located on the high-speed railway train, for any carrier, receives the pilot signal in the TS0 time slot, and estimates the time of TS0 according to the pilot signal saved by itself. The channel characteristic of each chip on the slot; according to the channel characteristic of each chip on the estimated TS0 time slot, carry out MMSE demodulation to the common channel signal on the TS0 time slot, and obtain the chip-level signal of the common channel signal; Carry the obtained chip-level signal on any carrier and send it to the UE on the high-speed railway train. By applying the present invention, Doppler spread can be overcome, and the signal receiving performance of the UE on the TS0 time slot in the high-speed rail cell can be improved.