Preparation method of gate oxide
A gate oxide layer and oxide layer technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of volatilization of nitrogen atoms on the surface, negative impact of carrier migration speed, and difficult process control, etc., to achieve Eliminates diffusion, improves electrical properties, effects of high nitrogen content
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[0036] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0037] see figure 1 , figure 1 Shown is a flow chart of the method for preparing the gate oxide layer of the present invention. The preparation method of the gate oxide layer includes:
[0038] Executing step S1: providing a silicon-based substrate, and performing thermal oxidation treatment and heat treatment process on the silicon-based substrate, so as to form the silicon dioxide gate oxide layer on the surface of the silicon-based substrate;
[0039] Executing step S2: performing nitrogen implantation on the silicon dioxide gate oxide layer formed on the surface of the silicon-based substrate using a plasma nitridation process to form the SiON gate oxide layer;
[0040] Executing step S3: performing laser treatment on the surface ...
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