The invention discloses a manufacturing method of an epitaxial
wafer of a GaN-based
light emitting diode, and belongs to the technical field of semiconductors. The manufacturing method includes the steps that a substrate is provided; a buffer layer, an undoped GaN layer, an n-type layer, a multi-
quantum well layer and a p-type layer are grown on the substrate in sequence, wherein the
multiple quantum well layer is of a
superlattice structure, each period includes a
quantum well layer and a
quantum barrier layer, and the growth temperature of at least two quantum barrier
layers tightly adjacent to the p-type layer is higher than that of the quantum barrier
layers except for the two quantum barrier
layers. The growth temperature of the quantum barrier layers close to the n-type layer is low,
crystal quality is poor, stress is relieved step by step, then the
piezoelectric polarization effect is weakened, and growth of the quantum barrier layers close to the p-type layer is facilitated. As the growth temperature of the quantum barrier layers close to the p-type layer is high, the
crystal quality is well improved, the
full width at half maximum is decreased, the
electron-hole composite probability is further improved, and then the light emitting efficiency of the GaN-based
light emitting diode is improved.