Si-substrate LED epitaxial wafer and preparation method therefor

An LED epitaxial wafer and substrate technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of large lattice mismatch and thermal mismatch between Si substrate and GaN, increased piezoelectric polarization effect, and internal quantum efficiency. low problems, to achieve the effect of improving internal quantum efficiency, improving optical output power, and increasing wave function overlap

Active Publication Date: 2016-03-16
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the lattice mismatch and thermal mismatch between the Si substrate and GaN are relatively large, resulting in a large stress between the InGaN/GaN multiple quantum well regional well

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Si-substrate LED epitaxial wafer and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0015] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0016] Such as figure ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an Si-substrate LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device with a special crystal structure and a preparation method for the device. The epitaxial wafer comprises an Si substrate and an epitaxial layer positioned on the surface of the Si substrate; and the epitaxial layer comprises an AlN/AlGaN buffer layer, an non-intentional-doped U-shaped GaN layer, an Si-doped N type GaN layer, an InGaN/Gan multiple-quantum well luminous layer, an electronic battier layer and an Mg-doped P type GaN layer from the bottom up in sequence. According to the epitaxial wafer, the internal quantum efficiency is improved, the piezoelectric polarization electric field is reduced and the wave function alternation of electrons and holes is increased, so that the radiation recombination probability is improved, and the internal quantum efficiency is further improved.

Description

technical field [0001] The invention relates to the technical field of a device with a special crystal structure and a preparation method thereof, in particular to a Si substrate LED epitaxial wafer and a preparation method thereof. Background technique [0002] LED is a solid-state semiconductor device that directly converts electrical energy into light energy. Compared with traditional light sources, LED has the characteristics of small size, long service life, fast response speed, and high luminous efficiency. Therefore, LED has become a new type of high-profile Green light sources have entered the field of lighting. Among them, LEDs on Si substrates have attracted widespread attention because of their low cost. However, the lattice mismatch and thermal mismatch between the Si substrate and GaN are large, resulting in a large stress between the InGaN / GaN multiple quantum well regional well barriers, and an increase in the piezoelectric polarization effect, resulting in a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/12H01L33/06H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/12H01L33/32
Inventor 刘波房玉龙王波袁凤坡潘鹏汪灵白欣娇周晓龙王静辉
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap