GaN-based light-emitting diode epitaxial wafer and preparation method thereof
A light-emitting diode, gallium nitride-based technology, applied in electrical components, electric solid-state devices, circuits, etc., can solve the problems of limited improvement of antistatic properties and luminous efficiency of epitaxial wafers, and inability to release stress, and improve antistatic performance. and luminous efficiency, increase the probability of recombination, reduce the effect of leakage channels
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[0025] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0026] An embodiment of the present invention provides an epitaxial wafer of a gallium nitride-based light-emitting diode, figure 1 It is a structural diagram of an epitaxial wafer of a gallium nitride-based light-emitting diode provided by an embodiment of the present invention, as shown in figure 1 As shown, the epitaxial wafer includes a substrate 10, a buffer layer 20, an undoped GaN layer 30, an N-type contact layer 40, an active layer 60, a P-type electron blocking layer 70, and a P-type contact layer 80 stacked in sequence. The sheet also includes a stress release layer 50 interposed between the N-type contact layer 40 and the active layer 60, figure 2 is a structural diagram of a stress release layer provided by an embodiment...
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