247results about How to "Increase chance of compounding" patented technology

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises a substrate, an anode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode in sequence from bottom to top, wherein the materials of the quantum dot light emitting layer include quantum dots and an amorphous insulating compound. The quantum dot light emitting layer is prepared by forming a film through spin coating of solution of the amorphous insulating compound containing the quantum dots, in order to weaken the electric field intensity at the quantum dot light emitting layer. Therefore, the possibility of electron recombination is improved while the electron and hole injection barriers are reduced, and thus, the efficiency and service life of QLED devices are increased effectively.

The invention discloses a method for enhancing the luminous efficiency of a multiquantum well of a semiconductor diode. A novel gradient growth method is adopted as a multiquantum well growth manner of an epitaxial wafer structure of a light emitting diode; in the multiquantum well structure, InGaN components in the first several periods are gradually increased, so that the stress generated in the growth process of suddenly transferring GaN to InGaN with high In components is eased, and thus the polarization effect is reduced, the crystal quality of the quantum well is improved, and the compounding possibility is increased. In addition, the thicknesses of barrier layers in the first several periods are gradually reduced, the speed of electrons and the traversing possibility of electrons can be reduced by the barrier layers with larger thickness, the traversing possibility of electron holes can be increased by the barrier layers with smaller thickness, so that the electrons and the electron holes are distributed more uniformly and the problem of the reduced efficiency under high current injection is avoided, and therefore the luminous efficiency of the multiquantum well is improved.

The invention discloses a fused ring compound comprising a structure shown as a formula (I) or (II). According to the fused ring compound, by controlling effective conjugation of aromatic rings and heterocyclic rings, the electron transport performance is balanced while the hole performance is improved. The compound has high triplet state energy level and glass transition temperature, is difficultin crystallization of material molecules, and is capable of ensuring high-efficiency transfer of energy to a guest material while serving as a host material of a luminous layer. The substituent groupof the fused ring compound is adjusted, the electron and hole transport performances are further improved, the singlet state and triplet state energy level difference is reduced, the compound area ofthe carrier is widened, and triplet state exciton annihilation is avoided. The invention further discloses an organic electroluminescence device. At least one functional layer contains the fused ringcompound, and the fused ring compound serves as the host material of the luminous layer and is matched with the energy level of an adjacent carrier transport layer. The luminous efficiency of the device is improved, and the driving voltage of the device is reduced.

The invention discloses a QLED, a manufacturing method therefor and an illuminating device. The QLED orderly comprises a substrate, a bottom electrode, a hole injection layer, a hole transmission layer, a first insulation layer, a quantum dot illumination layer, a second insulation layer, an electron transmission layer and a top electrode. According to the QLED, one insulation layer is added between the electron transmission layer / hole transmission layer and the quantum dot illumination layer, injection of electrons and holes into the quantum dot illumination layer can be controlled via the insulation layer, and therefore current carrier balance can be controlled and optimized; one insulation layer is added on each of two sides of the quantum dot illumination layer, the electrons and holes can effectively be limited in the quantum dot illumination layer, recombination probability can be increased, and overall efficiency of an apparatus can be improved.

The invention belongs to the technical field of natural polymer modification and discloses a preparation method of a starch and fatty acid compound. The method comprises the following steps: adding de-ionized water into starch and balancing moisture in a closed container; carrying out heat treatment to obtain the starch subjected to wet and hot treatment; then adding a buffering solution to prepare a starch solution; after pre-heating, adding 2 to 5u / g pullulanase liquid to react for 4 to 5 hours; after carrying out enzyme deactivation, centrifuging and separating to obtain enzyme treatment modified starch; then stirring and gelatinizing the starch in a boiled water bath for 25 to 45 minutes and cooling to 60 to 90 DEG C to obtain gelatinized starch; then transferring the gelatinized starch into a homogenizing machine and adding fatty acid to carry out homogenization and mixing; and keeping the heat of the water bath to synthesize for 30 to 40 minutes to obtain the starch and fatty acid compound. According to the preparation method, a greener and more environment-friendly new way is provided for synthesizing the starch and fatty acid compound through wet and hot treatment and controlled enzymolysis treatment by adopting a gelatinizing method.

The invention discloses a combined luminous element of an electronic barrier layer, which can be provided with an active luminous layer, an n-type gallium nitride layer, a p-type gallium nitride layer, and two III-V semiconductor layers with different energy gaps, wherein the semiconductor layers are periodically and repeatedly deposited on the active luminous layer as the electronic barrier layerwith higher potential barrier to obstruct excessive electronic active luminous layers. The combined luminous element can realize obstruction of electronic overflow through the electronic barrier layer to increase the composite probability of electrons and holes in the active luminous layer and discharge photons, and provides stress compensation through the combination of the III-V semiconductor layers with different crystal lattice sizes to reduce the accumulation of stress between the luminous element and the active luminous layer.

The invention discloses a fused ring compound, which has a structure shown as a formula (I) or a formula (II). The effective conjugation of aromatic rings and heterocyclic rings is controlled in the fused ring compound; the hole performance is improved; meanwhile, the electronic transmission performance is favorably balanced; the compound has high triplet state energy level and glass transition temperature; material molecules cannot easily crystallize; when the fused ring compound is used as a luminescent layer host material, the efficient transfer of energy to guest materials can be guaranteed. The substituent group of the fused ring compound is regulated, so that the electron and hole transmission performance is further improved; the singlet state and triplet state energy level difference is reduced; the compound region of carriers is expanded; the triplet state exciton annihilation is prevented. The invention also discloses an organic electroluminescence device; at least one function layer contains the fused ring compound; the fused ring compound is used as the host material of the luminescent layer and is matched with the adjacent carrier transmission layer energy level; the luminous efficiency of the device is improved; meanwhile, the driving voltage of the device is reduced.

The invention provides an LED epitaxial layer growing method and an LED epitaxial layer. The method for growing a P-type GaN layer comprises the steps that A, NH3 and Cp2Mg are introduced in a reaction chamber at the temperature of 900 DEG C to 950 DEG C, wherein pressure of a reaction cavity ranges from 200 mbar to 600 mbar, TMGa is closed, and pretreatment of doping Mg is carried out for 10 minutes-20 minutes; B, TMGa is introduced, Cp2Mg is closed, a GaN layer grows for 20 minutes-40 minutes, and the thickness of GaN is 5 nm-10 nm; the step A and the step B are repeated ten to twenty times until the total thickness of the P-type GaN layer is 80 nm-200 nm. According to the method, delta doping is used for growing the P-type GaN layer, the crystal quality of the P-type GaN layer is improved, the dislocation density is reduced, and hole concentration and the migration rate of P-type GaN are improved; more hole-electron pairs can be provided for light-emitting active areas of an LED device, the composite probability is improved, the brightness is promoted, and therefore photoelectric property of the LED device is improved.

The invention relates to a process of growing a nucleating layer on the surface of a patterned substrate at a low temperature to form an uneven surface. The invention overcomes the problem that in a conventional LED (Light-Emitting Diode) device structure, an active layer has a superstrong depolarization field, and thus, an energy band of a quantum well is inclined, an electron hole wave function is separated in space and the radiative recombination efficiency is reduced, so that the internal quantum efficiency of a LED is reduced. The invention also provides an epitaxial wafer structure of a gallium nitride-based LED and a preparation method of the epitaxial wafer structure, wherein the epitaxial wafer structure has high crystalline quality and a nonplanar active layer structure is implemented on a weak polarity surface of the epitaxial wafer structure. Therefore, the internal quantum efficiency of the LED is improved.

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of photoelectron manufacture. The epitaxial wafer comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type contact layer, a stress release layer, an active layer, a P-type electron blocking layer and a P-type contact layer. The stress release layer, comprising a first sublayer, a second sublayer and a third sublayer, is arranged between the N-type contact layer and the active layer, wherein the second sublayer comprises InxGa1-xN layers and N-type doped second GaN layers laminated alternatively, so that the stress formed due to lattice mismatch of a bottom layer can be effectively released, the piezoelectric polarization effect is reduced, and anti-static performance and luminous efficiency of the epitaxial wafer are improved. The first sublayer, the second sublayer and the third sublayer are N-type doped layers, thereby facilitating current expanding, reducing resistance at the two sides of the stress release layer and increasing capacitance at the two sides of the stress release layer; and more electrons are accumulated, so that a better electron blocking effect is achieved, electric leakage channels are reduced, and furthermore, the antistatic capability is further improved.

The invention provides a three-group nitrogen-compound semiconductor LED, which comprises a substrate, a buffer layer, an N-type semiconductor material layer, conformation active layers and a P-type semiconductor material layer, wherein the N-type semiconductor material layer has a first surface and a second surface; the first surface is in direct contact with the buffer layer; the second surface has a plurality of concave parts; the conformation active layers are formed on the second surface and in the concave parts; and the stress between the conformation active layers and the N-type semiconductor material layer can be released through the concave parts.

The invention discloses a growing method for a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growing method comprises the following steps: growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type GaN layer, an N-type inserting layer, an active layer, an electron barrier layer and a P-type GaN layer in sequence on a substrate, wherein the growth temperature of the N-type GaN layer is greater than that of the N-type inserting layer which is greater than that of the active layer; the N-type inserting layer comprises a first sublayer, a second sublayer and a third sublayer which are laminated in sequence; the first sublayer is a superlattice structure formed by alternately laminating two GaN layers in which the doping concentrations of the N-type doping agents are different, and the doping concentration of the N-type doping agent in the first sublayer is smaller than that of the N-type doping agent in the N-type GaN layer; the second sublayer is an AlGaN layer or a superlattice structure formed by alternately laminating at least three AlGaN layers and at least three GaN layers; and the third sublayer is an InGaN layer. The N-type inserting layer in the invention plays a buffer role, and is beneficial for the growth of the active layer.

The invention provides an organic electroluminescence device and relates to the technical field of organic electroluminescence. According to the invention, compounds shown as chemical formula I and IIare applied to the organic electroluminescence device, are jointly used as a hole transport layer of the device and are adaptively combined with each other, so that heat stability and carrier transport property of the material are effectively promoted, compounding probability of carrier is promoted, driving voltage of device is effectively reduced, luminous efficiency of device is increased, service life of device is prolonged and the problems of low heat stability of material, short service life and low luminous efficiency of the organic electroluminescence device are effectively solved.

The invention relates to the field of a semiconductor, and discloses an LED epitaxial structure. The LED epitaxial structure comprises a substrate and porous SiNx layers laminated on the substrate, and further comprises n-type GaN nano rod arrays formed in apertures of the SiNx layers, multi-quantum well layers which are successively laminated and wrap each surface of the GaN nano rod arrays, and a P-type GaN layer. The GaN nano rod arrays, the multi-quantum well layer wrapping each surface of the GaN nano rod arrays, and the P-type GaN layer form a three-dimensional core shell structure, the specific surface area is large, compared to a thin film material, more photons can be generated under the same current density, and the internal quantum efficiency of the LED epitaxial structure is improved. At the same time, a patterned substrate is unnecessary for growth of the GaN nano rod arrays, and the technical cost is low. The preparation method of the three-dimensional LED epitaxial structure is simple, is easy to implement and low in technical cost and can effectively guarantee the product yield.

The present invention discloses a red and yellow light emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of the semiconductor technology. The epitaxial wafer comprises a N-type substrate, a N-type buffer layer, a N-type reflection layer, a N-type restriction layer, an electronic blocking layer, a multiple quantum well layer, a cavity regulation layer, a P-type restriction layer, a P-type current extension layer and a P-type ohmic contact layer. The electronic blocking layer includes an AlGaInP layer and an AlInP layer; the cavity regulation layer includes a first sublayer and at least two second sublayers; the first sublayer is a non-doped AlInP layer, and a second sublayer includes a P-type doped AlInP layer and a non-doped AlInP layer; and the dosage concentration of the P-type doped AlInP layer is smaller than the P-type doped AlInP layer of the P-type restriction layer. The electronic blocking layer is used for delaying electrons to reach the multiple quantum well layer, and the cavity regulation layer is configured to allow the cavities to be uniformly distributed in the regions closed to the multiple quantum well layer so as to increase the recombination rate of the electrons and the cavities and improve the luminous efficiency of the light emitting diode.

The invention relates to a preparing method of a lotus seed amylase-aliphatic acid composite having a high composite index number, and belongs to the technical field of modified starch processing. The method includes preparing lotus seed amylase into submicron order particles through superfine grinding, and forming the single-screw V-type amylase-aliphatic acid composite through microwave pretreatment and ultrahigh pressure treatment in assistant. The composite has the ultra-high composite index number and an embedding rate. The method includes steps of preparing the amylase, performing superfine grinding, pretreating aliphatic acids, performing microwave pretreatment, performing ultrahigh pressure compositing, cooling and crystallizing at a low temperature, washing with an alcohol, centrifuging, freeze-drying, smashing and packaging. A product of the method is high in composite index number, good in digestion resistibility and high in embedding rate. Compared with traditional preparing methods, a process of preparing the composite is free of chemical agent addition and high in safety, the composite can provide a sense of satiety and reduce blood glucose when the composite is added into foods, and the composite has a good application prospect.

The invention provides a deep UV LED, which includes a substrate; an undoped buffer layer located on the surface of the substrate; an N type AlGaN layer on the undoped buffer layer and far away from the surface of the substrate; a multi-quantum well structure on the undoped buffer layer and far away from the surface of the substrate; and a P type AlGaN structure on the multi-quantum well structure and far away from the surface of the substrate, wherein the V type Al component of the P type AlGaN structure is gradually changed. The P type AlGaN structure with the gradually changed V type Al component is subjected to polarization doping. The Al component in the P type AlGaN structure with the gradually changed V type Al component is different from the Al component in the multi-quantum well structure. The P type AlGaN structure with the gradually changed V type Al component is far away from a P type GaN layer on the surface of the substrate. Based on the P type AlGaN structure with the gradually changed V type Al component, obtained electron holes are higher in concentration. Therefore, the internal quantum efficiency and the emission power of the UV LED are improved.

The invention discloses a light-emitting diode epitaxial slice and a manufacturing method thereof and belongs to the technical field of semiconductors. The epitaxial slice comprises a substrate, a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer and a P-type layer, wherein the low-temperature buffer layer, the high-temperature buffer layer, the N-type layer, the active layer and the P-type layer are sequentially laminated on the substrate. The high-temperature buffer layer comprises at least two GaN layers, and the Si doping concentration of the at least two GaN layers is increased layer by layer from 0 in the growth direction of the epitaxial slice and is smaller than that of the N-type layer. By increasing the Si doping concentration of the at least two GaN layers layer by layer from 0 in the growth direction of the epitaxial slice, electrons can be effectively provided, a current expanding area is increased, the current expansibility is improved, electron injection efficiency is improved, the probability of recombination of the electrons and holes is improved, resistance in a high-power chip is reduced, chip voltage is greatly reduced, the capability chip of resisting a high current is improved, and chip reliability is improved.

The invention provides a deep ultraviolet LED epitaxial structure, a preparation method thereof, and a deep ultraviolet LED. The deep ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron barrier layer, a P-type AlGaN layer and a P-type GaN layer, wherein the buffer layer, the N-type AlGaN layer, the multi-quantum well structure, the electron barrier layer, the P-type AlGaN layer and the P-type GaN layer are sequentially laminated upwards from the substrate. The P-type AlGaN layer comprises a first sub-layer, a second sub-layer and a third sub-layer, wherein the first sub-layer is P-type Al<x>Ga<1-x>N layer; the second sub-layer comprises non-doped Al<y>Ga<1-y>N layers and doped Al<y>Ga<1-y>N layers, which are stacked alternately, wherein the number of alternation times is greater than or equal to 1; the third sub-layer is P-type Al<z>Ga<1-z>N layer, wherein 1>x>y>z>0. According to the deep ultraviolet LED epitaxial structure provided by the invention, the luminous efficiency and the internal quantum efficiency of the ultraviolet LED are improved by changing the structure of the P-type AlGaN layer, so that the performance of the ultraviolet LED is improved.

The invention provides a heterocyclic compound and an organic electroluminescent device containing the heterocyclic compound, and relates to the technical field of organic electroluminescence. The heterocyclic compound disclosed by the invention has good film-forming property and thermal stability and relatively high glass-transition temperature, and the service life of the device can be prolonged when the heterocyclic compound is applied to an organic layer of the organic electroluminescent device; meanwhile, the structure has a deep HOMO energy level, so that holes can be effectively prevented from diffusing from the light-emitting layer to the electron transport layer and the recombination probability of the holes and electrons in the light-emitting layer can be effectively improved; and when the heterocyclic compound provided by the invention is applied to the electron transport or hole blocking layer, the light-emitting efficiency of a device can be effectively improved.

The invention discloses an aza-phenanthro-fluorene derivative and a preparation method thereof as well as an electrically-induced fluorescence luminescent device. The structural general formula of the aza-phenanthro-fluorene derivative is as shown in the specification, wherein Ar1 and Ar2 in the structural general formula are carbazole groups. The aza-phenanthro-fluorene derivative disclosed by the invention has the advantages that the aza-phenanthro-fluorene derivative has a relatively good non-planar rigid structure, due to the introduction of heteroatom, the electron transfer rate of the fluorene compound is increased, the device efficiency is improved, meanwhile the fluorene compound is connected to other carbazole groups with high fluorescence quantum efficiency and hole transfer rate through 9-site of the aza-phenanthro-fluorene, the molecular rigidity of the whole compound can be enhanced very well, the glass transition temperature of the compound is increased, the luminescent layer hole and the electron transfer rate of the device are promoted, the exciton recombination probability is increased, the stability of the luminescent device is further improved, meanwhile the pi-pi stacking between molecules of the compound is inhibited, the red shift degree of electroluminescent spectra is reduced, and the efficiency of the fluorescence luminescent device is improved.

The present invention discloses an organic electroluminescent light emitting device which comprises a glass substrate, an anode, a hole injection layer, a hole transmission layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transmission layer, an electron injection layer and a cathode which are stacked in order. The material of the electron blocking layer is the mixed material of a bipolar organic material and a zinc compound. The material of the hole blocking layer is the mixed material of a metal sulfide and a phosphorescent material. A hole can be blocked by the hole blocking layer of the organic electroluminescent light emitting device well, the recombination of the hole in the electron transmission layer can be avoided, the reflection of light is improved, and the light emitting efficiency is improved. Electrons can be effectively prevented from going into the hole transmission layer to recombine by the electron block layer, the transmission of the hole is facilitated, and finally the light emitting efficiency of the organic electroluminescent light emitting device is improved.

The invention provides a new quantum well structure, which can further effectively increase the recombination probability of carrier, improve quantum efficiency and realize optimization and improvement of efficiency of a photoelectric device. AlInGaN is used as a barrier, an In and Al component gradual barrier layer structure is designed to substitute barrier layer structure design of the conventional quantum well structure. The In component is doped into the barrier layer structure of the quantum well, the band bending of the quantum well is reduced, a quantum confined stark effect is weakened, the electron blocking efficiency of an electron barrier layer is improved, a hole injection efficiency of the quantum well is increased, spatial wave function overlap of electrons and space is increased, and these have a positive effect on improvement of luminous efficiency of an LED (Light Emitting Diode); meanwhile the Al component is doped into the barrier layer structure of the quantum well, so migration of the electrons to a P layer is effectively blocked; through the gradual component design of the AlInGaN, the influence of a polarization electric field can be reduced, and the spontaneous emission spectrum strength of the quantum well is improved.

The invention provides an LED epitaxial structure which comprises a substrate, a low-temperature buffer layer, a non-doped GaN layer, an Si-doped n-type GaN layer, an InxGa(1-x)N / GaN light emitting layer, an InX / Mg3N2 super-lattice inner roughed layer, a p-type AlGaN layer and a magnesium-doped p-type GaN layer, wherein the substrate, the low-temperature buffer layer, the non-doped GaN layer, the Si-doped n-type GaN layer, the InxGa(1-x)N / GaN light emitting layer, the InX / Mg3N2 super-lattice inner roughed layer, the p-type AlGaN layer and the magnesium-doped p-type GaN layer are successively laminated. The InX / Mg3N2 super-lattice inner roughed layer comprises 8-10 monomers which are arranged in an overlapped manner. Each monomer comprises an InN layer and a Mg3N2 layer. The LED epitaxial structure provided by the invention is advantageous in that the InX / Mg3N2 super-lattice inner roughed layer covers the light emitting layer; the InX / Mg3N2 material has an advantage of low mismatch with the GaN crystal lattice; high quality of the epitaxial layer crystal is realized; not only is light efficiency improved, but also antistatic capability can be improved; and LED product quality is improved. As an integral technical solution, the InX / Mg3N2 super-lattice inner roughed layer has advantages of increasing number of photons extracted from the LED in light unit time, reducing number of attenuation times of the photons in the LED, and correspondingly improving light extraction strength. The invention further discloses a growing method of the LED epitaxial structure. The growing method of the LED epitaxial structure has advantages of concise steps, easy process parameter control and convenient industrial production.

The invention provides an epitaxial structure of a near-infrared VCSEL laser. The structure comprises a GaAs substrate. A GaAs buffer layer, an N-type doped DBR, an active layer, an oxidation limiting layer, a P-type doped DBR and an ohmic contact layer are successively deposited on the GaAs substrate. The active layer successively comprises a limiting layer, a waveguide layer, a quantum well, a symmetrical waveguide layer and a symmetrical limiting layer. The quantum well is formed by multiple groups of quantum well layers. A thick barrier layer is arranged between the two adjacent groups of quantum well layers. A thickness of the thick barrier layer is greater than 50nm. In the epitaxial structure of the near-infrared VCSEL laser, through inserting the plurality of thick barrier layers in an active area quantum well, leakage losses of a carrier are reduced, a compound probability of an active area carrier is increased, a differential gain of the active area is improved and radiation power of the VCSEL laser is increased. Simultaneously, a limiting factor of active area photon is increased and a response rate of the VCSEL laser is improved.

The invention belongs to the field of electroluminescence devices and discloses an organic electroluminescence device and preparation method thereof. The organic electroluminescence device comprises an anode substrate, a hole injection layer, a hole transport layer, an electron barrier layer, a luminescent layer, a buffer layer and a cathode layer, wherein the anode substrate, the hole injection layer, the hole transport layer, the electron barrier layer, the luminescent layer, the buffer layer and the cathode layer are sequentially laminated. The material of the buffer layer is metal fluoride. By arranging the buffer layer between cathodes and the luminescent layer, permeation on the luminescent layer from the cathodes can be effectively avoided, and transmission performance of electrons is protected. Meanwhile, fluorine in the buffer layer can form bonding effect with material of the cathode layer so that Fermi level of the buffer layer and the cathode layer can be reduced to the same level, the band of the buffer layer can be bent, contact potential barriers of the luminescent layer and the cathode layer can be effectively reduced, energy needing to be overcome when the electrons are transmitted to the luminescent layer is reduced, transmission capacity of the electrons in the organic electroluminescence device is improved, and therefore luminous efficiency of the organic electroluminescence device is achieved.

The invention provides a water and oxygen self-blocking type quantum dot comprising a quantum dot and an aluminum oxide layer covering the surface of the quantum dot. According to the water and oxygenself-blocking type quantum dot, the surface of the quantum dot is covered with the aluminum oxide layer capable of blocking water and oxygen, and the water and oxygen self-blocking performance is given to the quantum dot. According to the water and oxygen self-blocking type quantum dot, the surface of a quantum dot material layer does not need to be additionally provided with a water and oxygen blocking layer, therefore, the device manufacturing and applying cost can be remarkably reduced, meanwhile, surface defect modes of the quantum dot can be reduced by introducing the aluminum oxide covering layer, therefore, electrons and holes can directly and effectively emit light compositely, the compositing probability of interface electrons and holes is improved, therefore the using efficiencyof the quantum dot is improved, and the service life of the quantum dot is prolonged.

The invention discloses an inverted type full inorganic nanometer oxide quantum dot light-emitting diode and a manufacturing method of the inverted type full inorganic nanometer oxide quantum dot light-emitting diode. The inverted type full inorganic nanometer oxide quantum dot light-emitting diode comprises a cathode, an electronic transmission layer, a hole transmission layer, a quantum dot light-emitting layer and an anode. One end of the quantum dot light-emitting layer is connected with the hole transmission layer connected with the anode, and the other end of the quantum dot light-emitting layer is connected with the electronic transmission layer connected with the cathode. Titanium dioxide is adopted as the electronic transmission layer, and nickel oxide is adopted as the hole transmission layer. The manufacturing method comprises the following steps that the cathode is manufactured on a glass sheet, and the cathode is coated with titanium dioxide precursor solutions in a spin mode to manufacture the inorganic electronic transmission layer; quantum dots are manufactured in a high temperature metal decomposition method, and the quantum dot light-emitting layer is manufactured on the electronic transmission layer; the nickel oxide is manufactured on the light-emitting layer as the hole transmission layer; the anode is manufactured on the hole transmission layer. According to the light-emitting diode, a light-emitting face is the front face, the inverted type structure and inorganic materials can reduce sensitivity of the light-emitting diode to oxygen and water, and the light-emitting service life of the light-emitting diode is prolonged under the same condition.

The invention discloses a manufacturing method of an epitaxial wafer of a GaN-based light emitting diode, and belongs to the technical field of semiconductors. The manufacturing method includes the steps that a substrate is provided; a buffer layer, an undoped GaN layer, an n-type layer, a multi-quantum well layer and a p-type layer are grown on the substrate in sequence, wherein the multiple quantum well layer is of a superlattice structure, each period includes a quantum well layer and a quantum barrier layer, and the growth temperature of at least two quantum barrier layers tightly adjacent to the p-type layer is higher than that of the quantum barrier layers except for the two quantum barrier layers. The growth temperature of the quantum barrier layers close to the n-type layer is low, crystal quality is poor, stress is relieved step by step, then the piezoelectric polarization effect is weakened, and growth of the quantum barrier layers close to the p-type layer is facilitated. As the growth temperature of the quantum barrier layers close to the p-type layer is high, the crystal quality is well improved, the full width at half maximum is decreased, the electron-hole composite probability is further improved, and then the light emitting efficiency of the GaN-based light emitting diode is improved.