The invention discloses a GaN-based light-emitting
diode epitaxial
wafer and a preparation method thereof, and belongs to the technical field of photoelectron manufacture. The epitaxial
wafer comprises a substrate, a buffer layer, a non-doped GaN layer, an N-type
contact layer, a stress release layer, an
active layer, a P-type
electron blocking layer and a P-type
contact layer. The stress release layer, comprising a first sublayer, a second sublayer and a third sublayer, is arranged between the N-type
contact layer and the
active layer, wherein the second sublayer comprises InxGa1-xN
layers and N-type doped second GaN
layers laminated alternatively, so that the stress formed due to
lattice mismatch of a bottom layer can be effectively released, the
piezoelectric polarization effect is reduced, and anti-
static performance and luminous efficiency of the epitaxial
wafer are improved. The first sublayer, the second sublayer and the third sublayer are N-type doped
layers, thereby facilitating current expanding, reducing resistance at the two sides of the stress release layer and increasing
capacitance at the two sides of the stress release layer; and more electrons are accumulated, so that a better
electron blocking effect is achieved, electric leakage channels are reduced, and furthermore, the antistatic capability is further improved.