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Deep ultraviolet LED epitaxial structure, preparation method thereof, and deep ultraviolet LED

An epitaxial structure, deep ultraviolet technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of restricting the development of commercialization and low luminous efficiency, and achieve improved hole injection rate, high luminous efficiency, and improved internal quantum efficiency and the effect of transmit power

Active Publication Date: 2019-08-09
MAANSHAN JASON SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although the market potential and application prospect of deep ultraviolet LED are huge, its commercial development is seriously restricted due to its low luminous efficiency.

Method used

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  • Deep ultraviolet LED epitaxial structure, preparation method thereof, and deep ultraviolet LED
  • Deep ultraviolet LED epitaxial structure, preparation method thereof, and deep ultraviolet LED

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Embodiment 1

[0054] This embodiment provides a deep ultraviolet LED epitaxial structure, such as figure 1 and figure 2 As shown, it includes a substrate and a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer that are sequentially stacked upward from the substrate;

[0055] Wherein, from the substrate upwards, the P-type AlGaN layer includes a first sublayer, a second sublayer and a third sublayer which are sequentially stacked; the first sublayer is P-type Al x Ga 1-x N layer; the second sub-layer includes non-doped Al alternately stacked y Ga 1-y N layer and doped Al y Ga 1-y N layer, alternating times ≥ 1; the third sublayer is P-type Al z Ga 1-z N layers, 1>x>y>z>0.

[0056] The preparation process of the deep ultraviolet LED epitaxial structure is as follows:

[0057] 1. Place the c-plane sapphire substrate on the carrier plate in the MOCVD reaction chamber, and process at 1000-1200° ...

Embodiment 2

[0069] This embodiment provides a deep ultraviolet LED epitaxial structure, such as figure 1 and figure 2 As shown, it includes a substrate and a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer that are sequentially stacked upward from the substrate;

[0070] Wherein, from the substrate upwards, the P-type AlGaN layer includes a first sublayer, a second sublayer and a third sublayer which are sequentially stacked; the first sublayer is P-type Al x Ga 1-x N layer; the second sub-layer includes non-doped Al alternately stacked y Ga 1-y N layer and doped Al y Ga 1-y N layer, alternating times ≥ 1; the third sublayer is P-type Al z Ga 1-z N layers, 1>x>y>z>0.

[0071] The preparation process of the deep ultraviolet LED epitaxial structure is as follows:

[0072] 1. Place the c-plane sapphire substrate on the carrier plate in the MOCVD reaction chamber, and process at 1000-1200° ...

Embodiment 3

[0084] This embodiment provides a deep ultraviolet LED epitaxial structure, such as figure 1 and figure 2 As shown, it includes a substrate and a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer that are sequentially stacked upward from the substrate;

[0085] Wherein, from the substrate upwards, the P-type AlGaN layer includes a first sublayer, a second sublayer and a third sublayer which are sequentially stacked; the first sublayer is P-type Al x Ga 1-x N layer; the second sub-layer includes non-doped Al alternately stacked y Ga 1-y N layer and doped Al y Ga 1-y N layer, alternating times ≥ 1; the third sublayer is P-type Al z Ga 1-z N layers, 1>x>y>z>0.

[0086] The preparation process of the deep ultraviolet LED epitaxial structure is as follows:

[0087] 1. Place the c-plane sapphire substrate on the carrier plate in the MOCVD reaction chamber, and process at 1000-1200° ...

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Abstract

The invention provides a deep ultraviolet LED epitaxial structure, a preparation method thereof, and a deep ultraviolet LED. The deep ultraviolet LED epitaxial structure comprises a substrate, a buffer layer, an N-type AlGaN layer, a multi-quantum well structure, an electron barrier layer, a P-type AlGaN layer and a P-type GaN layer, wherein the buffer layer, the N-type AlGaN layer, the multi-quantum well structure, the electron barrier layer, the P-type AlGaN layer and the P-type GaN layer are sequentially laminated upwards from the substrate. The P-type AlGaN layer comprises a first sub-layer, a second sub-layer and a third sub-layer, wherein the first sub-layer is P-type Al<x>Ga<1-x>N layer; the second sub-layer comprises non-doped Al<y>Ga<1-y>N layers and doped Al<y>Ga<1-y>N layers, which are stacked alternately, wherein the number of alternation times is greater than or equal to 1; the third sub-layer is P-type Al<z>Ga<1-z>N layer, wherein 1>x>y>z>0. According to the deep ultraviolet LED epitaxial structure provided by the invention, the luminous efficiency and the internal quantum efficiency of the ultraviolet LED are improved by changing the structure of the P-type AlGaN layer, so that the performance of the ultraviolet LED is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a deep ultraviolet LED epitaxial structure, a preparation method thereof and a deep ultraviolet LED. Background technique [0002] As a new type of ultraviolet light source, deep ultraviolet LED has the advantages of low energy consumption, small size, good integration, long life, environmental protection and non-toxicity, etc., and has broad application prospects in the fields of sterilization, printing, communication, detection, and ultraviolet curing. , is currently one of the fields and industries with the most potential for development of III-nitride semiconductors. [0003] Although the market potential and application prospect of deep ultraviolet LED are huge, its commercial development is seriously restricted due to its low luminous efficiency. In view of this, how to provide a deep ultraviolet LED epitaxial structure to improve the luminous efficie...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/00
CPCH01L33/007H01L33/14H01L33/145
Inventor 徐孝灵黄小辉王小文康健郑远志陈向东
Owner MAANSHAN JASON SEMICON CO LTD
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