Growing method for light-emitting diode epitaxial wafer

Abstract

The invention discloses a growing method for a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growing method comprises the following steps: growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type GaN layer, an N-type inserting layer, an active layer, an electron barrier layer and a P-type GaN layer in sequence on a substrate, wherein the growth temperature of the N-type GaN layer is greater than that of the N-type inserting layer which is greater than that of the active layer; the N-type inserting layer comprises a first sublayer, a second sublayer and a third sublayer which are laminated in sequence; the first sublayer is a superlattice structure formed by alternately laminating two GaN layers in which the doping concentrations of the N-type doping agents are different, and the doping concentration of the N-type doping agent in the first sublayer is smaller than that of the N-type doping agent in the N-type GaN layer; the second sublayer is an AlGaN layer or a superlattice structure formed by alternately laminating at least three AlGaN layers and at least three GaN layers; and the third sublayer is an InGaN layer. The N-type inserting layer in the invention plays a buffer role, and is beneficial for the growth of the active layer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for growing a light-emitting diode epitaxial wafer. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] An existing LED epitaxial wafer includes a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, an N-type GaN layer, an active layer, and a P-type GaN layer sequentially stacked on the substrate. [0004] In the process of realizing the present invention, the inventor finds that there are at least the following problems in the prior art: [0005] The growth temperature of the active...

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Problems solved by technology

[0005] The growth temperature of the active layer is low (below 1000°C), and the growth temperature of the N-type GaN layer is high (above 1000°C), which is not conducive to the growth of the active layer

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