126results about How to "Reduce migration rate" patented technology

The invention discloses special N-phthalate reinforced soft polyethylene plastics for a circulation loop, which comprises the following ingredients by weight parts: 100 weight parts of PVC resin powder, 20 to 50 weight parts of N-phthalate plasticizers, 5 to 35 weight parts of auxiliary stabilizing agents, 0.5 to 5.0 weight parts of stabilizing agents, 0.1 to 2.0 weight parts of lubricating agents and 0.1 to 1.0 weight part of antioxidants. The invention also discloses a preparation method of the special N-phthalate reinforced soft polyethylene plastics for the circulation loop. The method comprises the following steps: carrying out high-speed mixing on ingredients; using a double-screw extruding machine for plastification; and using a single screw for cooling and forming to obtain rubber grains. The recipe of the invention is suitable for the manufacture of the circulation loop, particularly the varieties with high processing precision and long operation time and the varieties needing ray sterilization.

The invention relates to a lithium ion battery made of a hollow porous nickel oxide composite material, and the negative electrode material of the lithium ion battery is wrapped by an N-doped carbon layer. The lithium ion battery comprises a negative electrode plate, a positive electrode plate, a bath solution and a membrane, and is characterized in that the active material of the negative electrode plate is the hollow porous nickel oxide composite material coated by an N-doped carbon layer and formed by taking an ionic liquid as a coating agent, the grain diameter of the hollow porous nickel oxide composite material is 200 to 300 nm, and the surface of the hollow porous nickel oxide composite material is coated with the N-doped carbon layer thin film distributed evenly. According to the lithium ion battery provided by the invention, the negative electrode material has a hollow porous structure coated by the unique N-doped carbon layer, the grain diameter is small, the dispersity is good, the conductivity performance of the material is good, lithium-ion and electron have a fast diffusion rate and transmission rate in the material, the lithium ion battery constructed on the basis of the material has the characteristics of good discharging performance, high cyclic stability and high capability. The invention further provides a preparation method of the lithium ion battery.

A method of reducing electromigration in a dual-inlaid copper interconnect line (3) by filling a via (6) with a Cu-rich Cu-Zn alloy (30) electroplated on a Cu surface (200 from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a reduced-oxygen Cu-Zn alloy as fill (30) for the via (6) in forming the dual-inlaid interconnect structure (35). The alloy fill (30) is formed by electroplating the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the fill (30) on the Cu surface (20); and annealing the electroplated Cu-Zn alloy fill (30); and planarizing the Cu-Zn alloy fill (30), thereby forming the dual-inlaid copper interconnect line (35).

The invention discloses a seasonal permafrost region self-thermoregulation returning energy-consuming slope supporting structure and a construction method and belongs to the technical field of seasonal permafrost anchor-plate retaining. The seasonal permafrost region self-thermoregulation returning energy-consuming slope supporting structure comprises a lattice beam, an anchor rod, a spring and a thermal insulation structure and is characterized in that the anchor rod is punched into a slope, anchoring slurry is injected with pressure, the anchor rod is anchored in a stable soil layer, a thermal insulation structure and a geogrid are sequentially paved from the slope surface to the exterior, a mortar surface layer is sprayed, a gird beam is constructed on the slope surface, the anchor rod penetrates a cross position of the gird beam, a base plate and a spring sequentially sleeve the anchor rod, the anchor rod is anchored on gird beam through an anchorage device, vertical water discharging channels are horizontally arranged with the interval of certain distance along the slope surface, a intercepting ditch is arranged at the slope top, and a drainage channel is constructed at a slope toe. The seasonal permafrost region self-thermoregulation returning energy-consuming slope supporting structure has self-thermoregulation thermal protection and heat insulation, expansion and shock reduction and self-returning supporting performances, timely discharges moisture, effectively solves slope instability caused by frost heaving thaw collapse disasters. The construction method is simple, strong in feasibility, quick in construction and low in cost.

The present invention relates to the semiconductor device fabrication industry. More particularly a semiconductor device, having an interim reduced-oxygen Cu—Zn alloy thin film (30) electroplated on a blanket Cu surface (20) disposed in a via (6) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu—Zn alloy thin film (30); filling the via (6) with further Cu (26); annealing and planarizing the interconnect structure (35). The reduction of electromigration in copper interconnect lines (35) is achieved by decreasing the drift velocity in the copper line (35) / via (6), thereby decreasing the copper migration rate as well as the void formation rate, by using an interim conformal Cu-rich Cu—Zn alloy thin film (30) electroplated on a Cu surface (20) from a stable chemical solution, and by controlling the Zn-doping thereof, which improves also interconnect reliability and corrosion resistance.

The invention relates to lead-free electrocondution slurry used for a crystalline silicon solar cell back electrode. The lead-free electrocondution slurry used for the crystalline silicon solar cell back electrode consists of the following components in percentage by weight: 40-70wt% of silver plating copper powder, 2-10wt% of inorganic lead-free glass powder and 25-50wt% of organic carrier, wherein the organic carrier is the mixture of solvent, thickening agent and additive, and the prepared electrocondution slurry printing back electrode has the advantages of big thickness, small bulk resistance, excellent soldering resistance, strong welding adhesive force and silver ion migration resistance. Meanwhile, after cell pieces are subjected to series welding, an assembly has the advantages of higher stability and stronger anti-aging capability.

The invention discloses a growing method for a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The growing method comprises the following steps: growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type GaN layer, an N-type inserting layer, an active layer, an electron barrier layer and a P-type GaN layer in sequence on a substrate, wherein the growth temperature of the N-type GaN layer is greater than that of the N-type inserting layer which is greater than that of the active layer; the N-type inserting layer comprises a first sublayer, a second sublayer and a third sublayer which are laminated in sequence; the first sublayer is a superlattice structure formed by alternately laminating two GaN layers in which the doping concentrations of the N-type doping agents are different, and the doping concentration of the N-type doping agent in the first sublayer is smaller than that of the N-type doping agent in the N-type GaN layer; the second sublayer is an AlGaN layer or a superlattice structure formed by alternately laminating at least three AlGaN layers and at least three GaN layers; and the third sublayer is an InGaN layer. The N-type inserting layer in the invention plays a buffer role, and is beneficial for the growth of the active layer.

The invention discloses a particle source which comprises a base and a tip, wherein the base is provided with a gradual top, and the tip is provided wih a slight bulge on the base. The particle source disclosed by the invention can provide large beam flow density and small beam flow angle.

The invention relates to a nano iron phosphate hollow sphere / graphene composite material with graphene as a carrier, and the nano iron phosphate of a hollow spherical structure with the particle size 50-100nm grows on the graphene. The preparation method of the composite material provided by the invention comprises the following steps: carrying out a hydro-thermal reaction on a mixed liquid containing oxidized graphene, hexahydrate ammonium ferrous sulfate and phosphoric acid at 60-120 DEG C by using urea as a precipitator and adding a surfactant (lauryl sodium sulfate); washing the products;and carrying out vacuum drying, obtaining the nano iron phosphate hollow sphere / graphene composite material. The nano iron phosphate hollow sphere / graphene composite material provided by the invention has the advantages of unique nano hollow structure, excellent electrical conductivity and discharge stability, small particle size, good dispersity and suitability for the anode material of a lithium ion secondary electrode; and the preparation method based on a low-temperature hydro-thermal method is simple and economic, thereby being suitable for realization of industrial large-scale production.

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, which belong to the field of light emitting diode manufacturing. The well layer in the multi-quantum well layer comprises a first BInGaN sub-well layer, a first InGaN sub-well layer, an InN sub-well layer, a second InGaN sub-well layer and a second BInGaN sub-well layer which are sequentially stacked in the growth direction of the light emitting diode epitaxial wafer. More electrons are captured in the middle of the well layer, the migration rate of the electrons is reduced, and carriers are distributed more uniformly. The barrier layer comprises a first BInGaN sub-barrier layer, a first BGaN sub-barrier layer, a BN sub-barrier layer, a second BGaN sub-barrier layer and a second BInGaN sub-barrier layer which are sequentially stacked in the growth direction of the light emitting diode epitaxial wafer. Good transition is performed between the barrier layer and the well layer through the BInGaN material so that defects caused by lattice mismatch between the well layers and the barrier layers can be reduced, crystal quality of the well layers and the barrier layers can be enhanced and finally luminous efficiency of the light emitting diode can be enhanced.

The invention provides micro-nano compound silver-copper alloy welding paste used for low-temperature sintering and interconnection and a production method. The production method comprises the following steps: evenly mixing an organic solvent, a thickener, a dispersant, a coupling agent and a defoamer according to a certain ratio to produce an organic carrier of the micro-nano compound silver-copper alloy welding paste; and then evenly mixing silver-copper nano-alloy particles and silver microparticles which are produced through a chemical reduction method, and a certain amount of the organic carrier to obtain the micro-nano compound silver-copper alloy welding paste used for low-temperature sintering and interconnection. According to the micro-nano compound silver-copper alloy welding paste used for low-temperature sintering and interconnection and the production method, by adopting a solid solution alloy principle to dope a silver phase with copper atoms, the single-phase silver-copper alloy particles are obtained; the problem of oxidation of copper is solved, meanwhile, due to doping of the copper atoms, the atom diffusion rate is reduced, the problem of massive volume shrinkage of pure nanometer welding paste in sintering processes is solved, and meanwhile, cost reduction and yield raising are facilitated, so that the micro-nano compound silver-copper alloy welding paste used for low-temperature sintering and interconnection and the production method are suitable for mass production; and the micro-nano compound silver-copper alloy welding paste can be substituted for traditional Sn-based solder and pure nano-Ag paste in low-temperature connection of third-generation semiconductors, and has higher reliability.

The invention discloses a high selective separability nanofiltration membrane preparation method which comprises the following steps: (1) preparing a separation layer with high flux and a low inorganic salt removing rate; (2) preparing a separation layer with high negative charge density. The high selective separability nanofiltration membrane preparation method disclosed by the invention has theadvantages that the defined amount of dendritic polyfunctional group membrane material is added into a water phase solution to form a polypiperazine-amide separation layer with smaller osmotic resistance; then interface polymerization reaction is utilized to finish residual acyl chloride groups on the surface of an initial polypiperazine-amide membrane, reacting with strong-electronegativity compound containing hydroxyl or amino and utilizing a chemical bond mode to durably enhance membrane surface electronegativity to obtain a high selective separability nanofiltration membrane. In addition,as the introduced strong-electronegativity compound contains sulfonic acid groups or phosphate groups, an isoelectric point is lower than that of a general polypiperazine-amide nanofiltration membrane, and the electronegativity of the membrane surface can be kept under a lower pH value; thus, a wider pH value application range is obtained.

The invention discloses an N-doped carbon layer wrapped hollow-porous nickel oxide composite material, which adopts an ionic liquid as a coating agent to form an N-doped carbon layer after carbonization coated upon a nano nickel oxide surface of a hollow-porous structure with a particle size of 200-300 nm. The preparation method for the composite material comprises the steps as follows: dispersing carbamide, nickel chloride hexahydrate and sodium acetate into ethylene-glycol, conducting a solvothermal reaction and obtaining a precursor body of a spherical carbonic acid hydrogen nickel; dispersing the precursor body into a 1-butyl-3-methylimidazole tetrafluoroborate ionic liquid, treating through adopting a solvothermal method, conducting a thermal treatment with argon gas to the product and obtaining the composite material. The N-doped carbon layer wrapped hollow-porous nickel oxide composite material provided by the invention adopts the unique nano hollow and porous structure, and is small in particle size and good in dispersity, excellent in electric conductivity and electric discharge stability, is applicable to anode materials of lithium ion secondary electrodes; the adopted solvothermal preparation method is simple, economical, and suitable for industrialized mass production.

The invention discloses a method for preparing nano copper powder in a micromolecular viscous medium. The method comprises the steps of: by taking a surface active agent, salt, a complexing agent, an antifoaming agent, an antioxidant, cupric salt, a reducing agent and deionized water as raw materials and according to the proportion of (0.001-95 percent) : (0.001-95 percent) : (0.001-80 percent): (0.001-75 percent): (0.001-70 percent): (0.001-75 percent): (0.001-70 percent): (0.001-98 percent), preparing the micromolecular viscous medium by using the surface active agent, the salt, the complexing agent, the antifoaming agent, the antioxidant and the deionized water; adding the cupric salt and uniformly mixing; adding the reducing agent and mixing; adding the deionized water to dilute so asto reduce the degree of viscosity according to a mass ratio of 1:0.5-10 of the total quantity of all materials abovementioned to the deionized water after the reaction completes; and obtaining nano copper powder through filter-pressing, deionized water washing, acetone washing and vacuum drying. According to the method disclosed by the invention, the raw materials selected in the invention are easily available, the manufacturing technique is simple and short, the production efficiency is high, the production cost and the energy compunction are low, and powder has low possibility of agglomeration and has good dispersibility, therefore the method is suitable for large-scale production and solves the problems of easy oxidation and easy agglomeration of the nano copper powder existing in the traditional chemical preparation method.

A degradable nontoxic seed coating agent comprises basic materials of water-soluble chitosan of 1.0-1.5wt%, gelatine of 0.05-0.1wt%, glycerol of 0.05-0.1wt%, PVA of 1.0-1.5wt% and plant extract of remainder, with the tensile strength of 18.7MPa, elongation of 10.1%, vapor transmission rate of 12.69g.mm / mm2.hr.mmHg, air permeability of (CO2)0.358*10-10ml.cm / cm2s.cmHg, air permeability of (O2)0.215*10-10ml.cm / cm2s.cmHg, hygroscopic rate of 47% and apparent viscosity of 290cp; uses water-soluble chitosan, PVA and plant extract to form seed coating film to not only meet performance requirement of conventional seed coating agents, but remarkably improve performance of film.

The invention discloses an active covering method for the in-situ remediation of sediments, relates to an active covering method for carrying out in-situ remediation on contaminated sediments, and is designed for solving the technical problem that an existing in-situ covering technology has a poor treatment capacity on combined pollutions due to thick covering. The method comprises the following steps: uniformly scattering pretreated ferrihydrite powder in a water body, so that the pretreated ferrihydrite powder is covered on sediments at the bottom of the water body; uniformly scattering pretreated calcite sand in the water body, so that the calcite sand is covered on the ferrihydrite powder layer; submerging pretreated geotechnical cloth in the bottom of the water body, so that the geotechnical cloth is uniformly covered on the calcite sand layer; uniformly scattering pretreated local river sand in the water body, so that the local river sand is covered on the geotechnical cloth. Ferrihydrite, calcite and local river sand used in the method are all natural materials, easy to obtain, and low in cost; the geotechnical cloth is pollution-free and low in cost, therefore, the method is technically economical and feasible. The invention belongs to the field of in-situ remediation of sediments.

The invention discloses a long-acting anti-icing coating as well as a preparation method and application thereof, and belongs to the technical field of coating preparation. The preparation method comprises the steps of firstly, carrying out hydrophobic and oleophylic modification on porous powder, then carrying out oil storage treatment to enable silicone oil to fully enter pores of the porous powder, then mixing a diluent, resin, a curing agent and the modified porous powder according to a certain proportion to obtain an anti-icing coating, and carrying out drop coating, blade coating or spincoating on the anti-icing coating, and curing the coating to obtain the long-acting anti-icing coating. The anti-icing coating prepared by the invention has anti-icing property and durable wear resistance, is strong in paint film adhesion, easy in method operation, low in cost, simple and effective, is suitable for various substrate materials, and can be applied to the surface of an aircraft, theinner wall of refrigeration equipment and outdoor facilities in cold regions.

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the field of semiconductor technology. The LED epitaxial wafer comprises a substrate, abuffer layer, an undoped GaN layer, an N-type layer, a stress relief layer, an electric field regulating layer, a multiple quantum well layer and a P-type layer, wherein the electric field regulatinglayer is a sandwich structure of Mg doped GaN / AlN / GaN. The LED epitaxial wafer comprises a substrate, a buffer layer, an undoped GaN layer, an N-type layer, a stress relief layer, an electric field regulating layer and a P-type layer. Doped with Mg in the electric field control layer, holes can be generated to consume some electrons in advance, reduce the electron concentration, and prevent the electrons from overflowing into the P-type layer due to the high concentration after moving to the multiple quantum well layer. At the same time, it can also reduce the intensity of the built-in electric field of the multiple quantum well layer, reduce the blocking effect on the holes, and improve the hole injection efficiency. And the AlN layer in the electric field control layer can raise the electron barrier, reduce the electron migration rate, and reduce the electron overflow. Finally, more electrons and holes can recombine in the multi-quantum well layer, which improves the luminescence efficiency of LEDs.

The invention relates to a preparation method of high-molecular surface active agent, which is characterized in that: 2 - {[(dodecyl thio) formyl thio] thio} succinic acid alkyl, acrylic acid, absolute ethyl alcohol are reacted with 4, 4'-azo-bis (4 - cyano acid) under the protection of argon gas at the temperature of 55 to 95 DEG C to obtain polyacrylic acid; absolute ethyl alcohol, 4, 4'-azo-bis (4 - cyano acid) and butyl acrylate are added in the polyacrylic acid, the temperature is increased to 55 to 95 DEG C to be reacted for 2 to 8 hours and to be decompressed and distilled after introducing argon gas, and wheat product, i.e. high-molecular surface active agent is obtained after being dried. The prepared molecular surface active agent not only can be used for emulsifying acrylate monomer, but also can be used as emulsifier for polymerizing emulsion. Amphipathy embedded copolymer is riveted on emulsion particles in the emulsion polymerization, and hydrophilic chain section extends into water phase, so the emulsion particles are stable through the space steric effect and the static effect so as to improve the electrolytic-resistant capacity and the frozen stability of the emulsion.

The invention provides an aluminum oxide ceramic. The aluminum oxide ceramic is prepared from aluminum oxide, calcined kaolin, bentonite, heavy magnesium carbonate, calcium carbonate, barium carbonate, glycerol, emulsified wax, titanium dioxide, zirconium dioxide and lanthanum oxide. The invention also provides a preparation method for the aluminum oxide ceramic. The preparation method comprises the following steps: mixing all the raw materials, adding water, carrying out ball milling, adding an aqueous polyvinyl alcohol solution with a mass fraction of 10%, continuing ball milling to obtain slurry, carrying out spray granulation to obtain a ceramic material, carrying out dry pressing molding, and performing roasting to obtain the aluminum oxide ceramic. According to the invention, Al2O3-SiO2-MgO-CaO composed of aluminum oxide, kaolin, bentonite, heavy magnesium carbonate and calcium carbonate is used as a basic system; barium carbonate, zirconium dioxide and lanthanum oxide are addedto serve as grain inhibitors; titanium dioxide serves as a solid solvent; glycerol and emulsified wax serve as dispersing agents; so the aluminum oxide ceramic with high bending strength is prepared.

The invention discloses a data migration method and device, equipment and a storage medium. The method comprises the steps that access information and the current data migration rate between a first storage area and a second storage area are obtained, and the access information comprises current system access information and historical data access information; inputting the current system access information and the current data migration rate into an adaptive control model to obtain a migration control factor; inputting the historical data access information into a migration data analysis model to obtain to-be-migrated data information; threshold parameters of the migration data analysis model are determined by migration control factors; and based on the to-be-migrated data information, executing a data migration operation between the first storage area and the second storage area. According to the technical scheme, data migration can be adaptively controlled according to the data access information and the current data migration rate, the migration rate is reduced in the peak access period, the migration rate is improved in the low peak access period, and therefore the influence of data migration on system services is reduced.

The invention belongs to the technical field of semiconductors, and particularly relates to a semiconductor light emitting element. The semiconductor light emitting element comprises a substrate, and a nitride buffer layer, an n-type layer, a shallow quantum well layer, a multiple quantum well layer and a p-type layer formed on the substrate sequentially. The semiconductor light emitting element is characterized in that a composite structure layer is also inserted between the shallow quantum well layer and the multiple quantum well layer; the composite structure layer at least comprises a p-type doped GaN layer, an n-type doped GaN layer, and an isolation layer located between the p-type doped GaN layer and the n-type doped GaN layer. The feature that p-type impurities in the composite structure layer are migrated to the shallow quantum well layer and the multiple quantum well layer is used, light emitting of the shallow quantum well layer and the composite structure layer is promoted while the light-emitting strength of the multiple quantum well layer is enhanced, the light outgoing area of the semiconductor element is increased, and the light-emitting strength is further enhanced.

The invention provides anti-precipitation environment-friendly flame-retardant plastic masterbatches and a preparation method thereof. The preparation method comprises the following steps: preparing anano montmorillonite gel at first, homogeneously mixing the nano montmorillonite gel with a halogen flame retardant, then carrying out spray-drying and granulating to obtain a halogen flame retardantencapsulated by the nano montmorillonite gel, and finally blending and granulating the halogen flame retardant with a flame-retardant synergist EVA, a coupling agent, chlorinated paraffin, a stabilizer and modified polyamide to obtain the anti-precipitation flame-retardant plastic masterbatches. According to the invention, the nano montmorillonite gel is used for encapsulating the flame retardant, so that the migration resistance between the flame retardant and resin is increased, the migration rate of the low-molecular-weight halogen flame retardant is reduced, the anti-precipitation effectcan be achieved, the phenomenon of 'frosting' on the surface of the material is eliminated, the apparent quality of the product is improved, a polyolefin material is endowed with a long-acting flame retardant effect, the nano montmorillonite gel carrier has the characteristic of high specific surface area, and the smoke amount during combustion can be reduced.

The invention relates to a low-expansion alloy and a preparation method thereof, and relates to the technical field of low-expansion alloys. According to the mainly adopted technical scheme, the volume fraction of annealing twin crystals in the low-expansion alloy is larger than or equal to 20%, and the linear expansion coefficient of the low-expansion alloy within the temperature range of -160 DEG C to 25 DEG C is 0.8*10<-6> / DEG C to 1.5*10<-6> / DEG C. The preparation method of the low-expansion alloy comprises the step of sequentially carrying out solution treatment, cold rolling deformationtreatment and annealing treatment on a low-expansion alloy body so as to obtain the low-expansion alloy, wherein in the cold rolling deformation treatment step, the total deformation of the alloy is 65-99%, and in the annealing step, the annealing temperature ranges from 800 DEG C to 900 DEG C, and the annealing time ranges from 5 min to 30 min. According to the low-expansion alloy, annealing twincrystals can be effectively introduced into the low-expansion alloy, so that the low-expansion alloy is strengthened on the premise that the linear expansion coefficient of the alloy is hardly influenced. The contradictory relation between the expansion performance and the strength of the alloy is fundamentally solved, and application of the low-expansion alloy in precise structural parts is facilitated.

The invention relates to an axial vibrating flat sheet membrane device capable of improving membrane flux and effectively controlling membrane pollution. When the membrane technology is used for microalgae recycle or water treatment, membrane pollution is an inevitable problem all the time. Membrane pollution will reduce membrane flux and reduce the filtering efficiency, besides, cleaning of a membrane will consume more manpower and materials, the membrane is damaged, and the service life of the membrane is shortened. The axial vibrating flat membrane device quickly vibrates up and down to generate shear force on the surface of the membrane, deposition of pollutants on the surface of the membrane can be effective prevented, accordingly membrane pollution can be slowed down, and the membrane flux can be improved. According to the device, the vibration amplitude can be adjusted by punching in a rotary plate in turn, the rotary plate and a motor rotary shaft are connected, the rotary plate rotates along with the motor rotary shaft, and the vibration amplitude can be increased from 1 mm to 40 mm. A motor is connected with a frequency regulator, and the vibration frequency of a vibrating film can be adjusted by the frequency regulator. When the vibration amplitude is set to be 1-40 mm, the frequency of a vibrating device can be adjusted to be 0-60 Hz. According to the device, only a membrane assembly is driven to vibrate up and down, an aqueous solution in a reactor does not need to be driven, and accordingly energy consumption for vibration can be reduced.

The invention discloses a light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, a carrier adjusting layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the carrier adjusting layer, the active layer and the P-type semiconductor layer are laminated on the substrate in sequence; and the carrier adjusting layer is made from magnesium-doped aluminum-indium-gallium-nitrogen. The magnesium-doped aluminum-indium-gallium-nitrogen layer is inserted between the N-type semiconductor layer and the active layer, and an electronic barrier layer with wide forbidden band is formed, so that electronsare avoided from overflowing; simultaneously, hole consumption electrons are provided, so that the time that the electrons are injected into the active layer is prolonged; and moreover, built-in electric fields formed inside the active layer are reduced, so that the injection efficiency of holes is improved. Above all, the magnesium-doped aluminum-indium-gallium-nitrogen layer is inserted betweenthe N-type semiconductor layer and the active layer, and the distribution of carriers can be changed, so that the quantity of electrons injected into the active layer is matched with hole quantity, and finally the light-emitting efficiency of an LED is improved.

The present invention discloses an ultrathin metal shell lithium ion battery and a preparation method thereof. The battery comprises an ultrathin metal shell and an internal battery cell, the internalbattery cell is composed of a positive pole piece, a negative pole piece, an isolating membrane and an electrolyte, and a lithium metal layer is embedded in the inner wall of the ultrathin metal shell to form a lithium electrode; a lithium electrode terminal capable of being connected with an external power supply is arranged on the outer wall of the ultrathin metal shell, the terminal of the negative pole piece is set as a battery cell negative pole, the battery cell negative pole is provided with a negative lead, and the terminal of the positive pole piece is set as a battery cell positivepole which is provided with a positive lead; and the lithium electrode terminal is connected with the negative lead or the positive lead through direct conductive connection or an external power supply, so that lithium metal lost electrons on the inner wall of the metal shell are changed into lithium ions, migrated through electrolyte and pre-embedded into the negative pole piece. The metal shellis arranged to be the lithium electrode, the lithium pre-embedding process of the negative electrode is accelerated under the auxiliary effect of external voltage, the first charging and discharging efficiency of the battery is further improved, and the cycle life of the battery is further prolonged.

The invention discloses an antibacterial antifogging agent, and an antibacterial long-acting antifogging wet tissue prepared from the same. The antibacterial long-acting antifogging wet tissue is prepared from, by mass, 0.1-0.5% of a special film forming agent, 0.05-0.1% of an antibacterial agent, 0.01-0.05% of a chelating agent, 0.1-0.5% of alkyl glycoside, 0.01-0.1% of an emulsifier, 0.01-0.1% of a fluorocarbon surfactant, 0.01-0.1% of sodium chloride, 0.05-0.1% of citric acid, 10-40% of absolute ethyl alcohol, and the balance of water. The product prolongs the antifogging time to a great extent, and is suitable for various types of lenses.

The invention relates to a brightness improved LED luminescent layer epitaxial structure and a preparation method thereof, and belongs to the technical field of semiconductor device preparation. The brightness improved LED luminescent layer epitaxial structure comprises a substrate layer, a Buffer layer, a U type GaN layer, an N type GaN layer, a quantum well stress releasing layer, an improved brightness increasing LED luminescent layer, a P type AlGaN layer and a P type GaN layer. The improved brightness increasing LED luminescent layer comprises multiple normal quantum well layers, and multiple AlyGa(1-y)N / GaN / AlxGa(1-x)N type quantum barrier layers whose component and thickness are changed gradually in a reciprocal way. The thickness of the GaN layer in the AlyGa(1-y)N / GaN / AlxGa(1-x)Ntype quantum barrier layers is increased and then decreased with increase of the period number of quantum wells, the quantum barrier which is thicker in the middle can reduce the electron migration rate effectively, the number of electrons which cross the barrier is reduced, direct non-irradiation combination with cavities is avoided, and the light emitting efficiency is improved.

The invention relates to an anti-seepage concrete material in a plateau region and a preparation method of the concrete material. The anti-seepage concrete material in the plateau region is prepared from the following components, in percentages by mass: 18.6%-20.2% of cement, 6.1%-6.5% of water, 65.3%-71.9% of aggregate, 1.0%-2.0% of an alkaline activator, 0.1%-0.3% of a polycarboxylic acid high-efficiency water reducing agent and 2.0%-6.0% of an anti-seepage emulsion in the plateau region, wherein the anti-seepage emulsion in the plateau region includes paraffin. According to the concrete material and method provided by the invention, the seepage resistance of concrete in the plateau region can be effectively improved by a synergistic effect on concrete internal phase-change temperature control, anti-cracking operation and improvement of concrete compactness.