303results about How to "Increase light emitting area" patented technology

An opposed terminal structure including a supporting substrate, a first terminal, a nitride semiconductor with a light-emitting layer, and a second terminal. The second terminal forms an opposed terminal structure with the first terminal, which can be formed in a variety of patterns.

A lamp is provided. The lamp includes a lamp housing; light emitting diodes (LEDs); a main reflector disposed so as to oppose to the LEDs for reflecting light emitted from the LEDs towards a front side of the lamp; a sub-reflector which is interposed between the LEDs and the main reflector, and which reflects and diffuses the light emitted from the LEDs towards the main reflector; an LED element assembly which extends in parallel with the sub-reflector and comprises a plurality of flat portions, each flat portion corresponding to one of the plurality of LEDs and on which the corresponding LED is mounted, adjacent ones of the flat portions being coupled together by at least one step portion; and a center portion which covers the LED element assembly and the LEDs such that the LEDs are not exposed to the front side of the lamp.

An alternating current (AC) light emitting assembly and an AC light emitting device are disclosed. The AC light emitting assembly includes a substrate; a rectifier unit comprising a plurality of rectifier components arranged in a Wheatstone Bridge, for rectifying an AC signal into a direct current (DC) signal, each of the rectifier components having a high breakdown voltage and a low forward voltage; a light emitting unit electrically connected to the rectifier unit and comprising a plurality of light emitting components formed on the substrate, for emitting light when receiving the DC signal outputted by the rectifier unit; and two conductive electrodes electrically connected to the rectifier unit for receiving and transmitting the AC signal to the rectifier unit. The AC light emitting device includes two stacked and electrically connected AC light emitting assemblies.

A high output light emitting diode (LED) and a method for fabricating the LED is disclosed. The LED includes a sidewall or surface that is inclined. A reflective film is formed on the inclined sidewall or surface to allow light to reflect from the reflective film and to emit the light upward or in a favorable direction with respect to the device, thereby being configured and enabled to improve a light output of the LED and dispense with an additional passivation process.

The present invention provides a light semiconductor device comprising a substrate and a first semiconductor structure on the substrate. A light emitting structure is on a first portion of the first semiconductor structure. A first contact structure is on a second portion of the first semiconductor structure. The second portion is separated from the first portion of the first semiconductor structure. The first contact structure has a first shape. A second semiconductor structure is on the light emitting structure. A transparent contact is on the second semiconductor structure and has a cut-off portion to expose the portion of second semiconductor structure and a second shape. A second contact structure is on the cut-off portion of the transparent contact. The second contact structure contacting the second semiconductor has a third shape. The second contact structure with the third shape is corresponded to both the transparent contact with the second shape and the first contact structure with the first shape whereby a relationship provides a plurality of current paths with substantially equal distances between the first contact structure and the second contact structure.

The invention discloses a manufacture method of an array type high-voltage LED device, which comprises the steps of: manufacturing a mask on a P type gallium nitride layer with an epitaxial structure, selectively etching the epitaxial structure to form an N type step structure; manufacturing a mask on the surface of an N type gallium nitride layer with an epitaxial structure, forming isolated deep trench; carrying out high-temperature sulfur phosphoric acid corrosion; depositing an insulation dielectric layer on the surface of the etched epitaxial structure; corroding the insulation dielectric layer outside the side wall of the deep trench; manufacturing a transparent conductive layer between adjacent N type step structures; partially corroding the transparent conductive layer on the surface of the P type gallium nitride layer on the N type step structure on the outermost side; and manufacturing a P metal electrode and an N metal electrode on the transparent conductive layer. According to the invention, electrode light absorption can be reduced, the light outlet area on the epitaxial side surface and the bottom of the chip is increased, the manufacture method is mutually matched with a post process, and thus the light emitting efficiency of a high-voltage LED chip can be increased.

The embodiment of the invention discloses a display panel and a display device. The display panel comprises a display area and a transparent display area; The transparent display area includes a plurality of sub-pixels and a transparent area, and the anode electrodes of at least two sub-pixels of the same color are connected. The embodiment of the invention solves the problem that the brightness difference exists in the display panel because the transparent display area should be compatible with the transparent and display functions in the existing full-screen display panel.

To provide a rear lamp unit for a vehicle which is provided with a desired cut pattern on an outer lens so that the light-emitting area can be increased. A rear lamp unit is provided with upper and lower outer lenses for guiding light emitted from light-emitting diodes to the outside the vehicle. The upper and lower inner lenses are provided between the light-emitting diodes and the upper and lower outer lenses, respectively, and the upper and lower inner lenses are disposed at locations apart from the upper and lower outer lenses, respectively.

A light emitting diode stack for a display includes a support substrate, a first LED stack, a second LED stack, and a third LED stack, a conductive growth substrate coupled to the second LED stack or the third LED stack, a first color filter interposed between the first and second LED stacks and transmitting light generated from the first LED stack while reflecting light generated from the second LED stack, and a second color filter interposed between the second and third LED stacks and transmitting light generated from the first and second LED stacks while reflecting light generated from the third LED stack, in which light generated from the first LED stack is emitted outside through the second LED stack, the third LED stack, and the conductive growth substrate, and light generated from the second LED stack is emitted outside through the third LED stack and the conductive growth substrate.

The invention discloses a LED, which comprises: a sapphire substrate, a GaN buffer layer, an N/P-type GaN/ohmic contact layer, an InGaN/GaN quantum trap active layer, and a concentric P-type ohmic contact transparent electrode with grooves between near ring electrodes manufactured by dry etching. This invention makes even current injection, increases probability of side-surface light, reduces reflection angle, and thereby decreases greatly light energy loss.

A vehicle headlamp has a first light source disposed on a first optical axis that extends in a front-to-rear direction of a vehicle, a first lens that projects light emitted from the first light source to a front of the vehicle, a second lens having a rear focal point on a second optical axis that is parallel to the first optical axis and disposed adjacent to the first lens, a second light source disposed on the second optical axis rearwards of the first light source, a reflector that reflects light emitted from the second light source towards the rear focal point of the second lens, and a sub-reflector disposed such that the sub-reflector does not interfere with an optical path which extends from the reflector to the second lens and that causes part of light emitted from the first light source to be incident on the second lens.

The invention discloses a single-mode high-power high-brightness GaSb-based bragg reflection master oscillator power amplifier (MOPA) integrated semiconductor laser and a manufacturing method thereof. The bragg reflection MOPA integrated semiconductor device comprises a substrate, an epitaxy structure, a gain amplification region, a master oscillator region, a bragg reflection region and optical limiting grooves, wherein the epitaxy structure grows on the substrate and comprises an N-type lower contact layer, an N-type lower limiting layer, a lower waveguide layer, an active region, an upper waveguide region, a P-type upper limiting layer and a P-type upper contact layer from bottom to top; the gain amplification region is located on the front part, namely a light outlet part, of the semiconductor laser, and is in a conical structure which is formed by etching the P-type upper contact layer downwards; the master oscillator region is located at the rear part of the gain amplification region and is in a ridge waveguide structure which is formed by etching the P-type upper limiting layer downwards; the bragg reflection region is located at the rear part of the master oscillator region and is in a periodical bragg grating structure which is formed by etching the P-type upper limiting layer downwards; and the optical limiting grooves are symmetrically distributed in two sides of the ridge waveguide and are obliquely arranged together with the ridge waveguide.