Semiconductor laser and manufacturing method thereof

Abstract

The invention discloses a single-mode high-power high-brightness GaSb-based bragg reflection master oscillator power amplifier (MOPA) integrated semiconductor laser and a manufacturing method thereof. The bragg reflection MOPA integrated semiconductor device comprises a substrate, an epitaxy structure, a gain amplification region, a master oscillator region, a bragg reflection region and optical limiting grooves, wherein the epitaxy structure grows on the substrate and comprises an N-type lower contact layer, an N-type lower limiting layer, a lower waveguide layer, an active region, an upper waveguide region, a P-type upper limiting layer and a P-type upper contact layer from bottom to top; the gain amplification region is located on the front part, namely a light outlet part, of the semiconductor laser, and is in a conical structure which is formed by etching the P-type upper contact layer downwards; the master oscillator region is located at the rear part of the gain amplification region and is in a ridge waveguide structure which is formed by etching the P-type upper limiting layer downwards; the bragg reflection region is located at the rear part of the master oscillator region and is in a periodical bragg grating structure which is formed by etching the P-type upper limiting layer downwards; and the optical limiting grooves are symmetrically distributed in two sides of the ridge waveguide and are obliquely arranged together with the ridge waveguide.

Description

technical field [0001] The invention relates to a mid-infrared semiconductor laser, in particular to a single-mode high-power high-brightness GaSb-based Bragg reflector MOPA integrated semiconductor laser and a preparation method thereof. Background technique [0002] The 2-5μm band contains a very important atmospheric window, including the characteristic spectral lines of many gas molecules, which can be widely used in civil projects such as air pollution monitoring and gas detection; and high-power lasers working in this band can be expected to be used in lidar, It can play a better application effect in military projects such as photoelectric countermeasures. Traditional Si-based and GaAs-based materials have relatively wide band gaps and cannot meet the requirements for wavelength. The relatively narrow bandgap of GaSb material has inherent advantages. However, most F-P cavity semiconductor lasers with common structures work in multimode, and spectral broadening effect...

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Problems solved by technology

[0003] The common methods to achieve single longitudinal mode wavelength stabilization are DFB structure and DBR structure. For GaSb-based materials, the problem of easy oxidation caused by the high aluminum component in the waveguide layer and confinement layer makes the traditional burial method that requires secondary epitaxy. The production of grating DFB is very difficult

GaSb-based DFB uses the ridge waveguide and Bragg grating in the epitaxial layer to complete the refractive index guidance and gain guidance of light. However, in order to ensure the single-mode operation of the laser, the width of the ridge waveguide is on the order of several microns, and its The light output area is small, the optical power density is high, and it is easy to cause catastrophic optical mirror damage (COMD) on the cavity surface, which is not conducive to the stable operation of the laser, and its output power is also limited to a lower range. An effective method is to increase the strip width of the ridge waveguide region. However, the increase of the strip width will affect the stability of the single mode of the laser. prone to optical catastrophe

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