Process for manufacturing AlGaInP light-emitting diode with inclined side face
A technology of light-emitting diodes and aluminum gallium indium phosphide, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of poor heat dissipation and low light extraction efficiency of light-emitting diodes, and achieve the expansion of the range of light output angles, the increase of light output areas, and the light output. The effect of improving efficiency
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[0023] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
[0024] figure 2 As shown, a manufacturing method of laser lift-off GaN-based light-emitting devices using the synthetic separation method provides a gallium arsenide substrate 21; a distributed Bragg reflection layer 22 is formed on the top surface of the gallium arsenide substrate 21, and the distributed Bragg reflection layer 22 is composed of stacked material layers with alternating high and low refractive index; a first-type epitaxial layer 23 is formed on the distributed Bragg reflection layer 22; a light-emitting layer 24 is formed on the top surface of the first-type epitaxial layer 23; The second-type epitaxial layer 25; the P electrode 26 is formed on the top surface of the second-type epitaxial layer 24; the N electrode 27 is formed on the bottom surface of the gallium arsenide substrate 21 to form an LED chip; an inductively coupled plasma d...
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