Quantum dot light emitting diode and preparation method thereof
A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc. Barrier increase and other issues to achieve the effect of increasing the recombination probability and weakening the electric field strength
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[0027] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0028] see figure 1 , figure 1 It is a schematic structural diagram of a preferred embodiment of a quantum dot light-emitting diode of the present invention. As shown in the figure, the quantum dot light-emitting diode sequentially includes a substrate (not shown in the figure), an anode 1, a hole The transport layer 2, the quantum dot light-emitting layer 3, the electron transport layer 4 and the cathode 5; wherein, the material of the quantum dot light-emitting layer 3 contains quantum dots and an amorphous insulating compound.
[0029] The materia...
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