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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc. Barrier increase and other issues to achieve the effect of increasing the recombination probability and weakening the electric field strength

Active Publication Date: 2017-02-08
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the problem that when the efficiency of the existing device is high, the lighting voltage of the device increases, resulting in the injection of electrons and holes. The problem that the potential barrier increases and the recombination rate of electrons and holes decreases

Method used

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

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Embodiment Construction

[0027] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0028] see figure 1 , figure 1 It is a schematic structural diagram of a preferred embodiment of a quantum dot light-emitting diode of the present invention. As shown in the figure, the quantum dot light-emitting diode sequentially includes a substrate (not shown in the figure), an anode 1, a hole The transport layer 2, the quantum dot light-emitting layer 3, the electron transport layer 4 and the cathode 5; wherein, the material of the quantum dot light-emitting layer 3 contains quantum dots and an amorphous insulating compound.

[0029] The materia...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof. The quantum dot light emitting diode comprises a substrate, an anode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a cathode in sequence from bottom to top, wherein the materials of the quantum dot light emitting layer include quantum dots and an amorphous insulating compound. The quantum dot light emitting layer is prepared by forming a film through spin coating of solution of the amorphous insulating compound containing the quantum dots, in order to weaken the electric field intensity at the quantum dot light emitting layer. Therefore, the possibility of electron recombination is improved while the electron and hole injection barriers are reduced, and thus, the efficiency and service life of QLED devices are increased effectively.

Description

technical field [0001] The invention relates to the technical field of quantum dot light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Luminescent quantum dots are expected to become the next generation of new display materials due to their high fluorescence intensity and good color purity. When evaluating the relevant parameters of red, green and blue electroluminescent quantum dots, they are all based on QLED devices. The direct evaluation parameters include brightness, current efficiency, and external quantum efficiency. However, for the QLED device itself, the most direct factor affecting these parameters is the electron (e - ) and holes (h + ) Whether the injection in the light-emitting layer is balanced, such as electrons (e - ) and holes (h + ) recombination probability, electron (e - ) and holes (h + ) injection barrier. [0003] In QLED devices, in order to reduce the injec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/00H01L51/50H01L51/56
CPCH01L33/005H01L33/06H10K50/115H10K71/00
Inventor 程陆玲杨一行
Owner TCL CORPORATION
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