LED epitaxial layer growing method and LED epitaxial layer
A growth method and epitaxial layer technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of LED device voltage rise, poor anti-static ability, aggravated compensation effect, etc., to reduce the working voltage, good contact, defects low density effect
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[0046] see figure 2 , the present invention uses AixtronMOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa), triethylgallium (TEGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100mbar and 800mbar.
[0047] A method for growing an LED epitaxial layer, which sequentially includes processing a substrate, growing a low-temperature buffer GaN layer, growing a non-doped GaN layer, growing a Si-doped GaN layer, growing an active layer MQW, growing a P-type AlInGaN layer, and growing a P-type GaN layer layer step, its opera...
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