The invention relates to an LED structure with an aluminum-component-gradient electron blocking layer. Low-Al-component AlxGa1-xN is arranged on one side, which is in contract with an outer GaN barrier of a multiple-quantum well layer, of the aluminum-component-gradient electron blocking layer, the x is greater than or equal to 0 and smaller than or equal to 0.1, high-Al-component AlyGa1-yN is arranged on one side, which is in contact with a p-GaN layer, of the aluminum-component-gradient electron blocking layer, the y is greater than 0.1 and is smaller than or equal to 0.4, and the quantity of Al components in the middle of the aluminum-component-gradient electron blocking layer is gradually increased linearly. The low-Al-component AlGaN is arranged on one side, which is in contact with the GaN barrier, of the electron blocking layer, so that the density of polarization charges between interfaces of the electron blocking layer and the GaN barrier are effectively reduced, and a polarization field is weakened. Accordingly, the concentration of two-dimensional electron gas of the interfaces is greatly reduced, leakage current is decreased, the internal quantum efficiency of a device is improved in general, and the problem of attenuation of the quantum efficiency is solved.