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LED structure with aluminum-component-gradient electron blocking layer

A technology of electron blocking layer and aluminum component, which is applied in the field of optoelectronics, can solve the problems of reduced internal quantum efficiency and band bending, and achieve the effects of weakening energy band bending, weakening potential barriers, and improving carrier injection efficiency

Inactive Publication Date: 2012-12-12
JIANGSU YONGDING COMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The present invention aims at the phenomenon of built-in polarization electric field and energy band bending in current GaN LED devices, especially the conduction band bending at the interface between GaN barrier and traditional AlGaN EBL, and the formation of high-density two-dimensional electron gas leads to internal quantum efficiency. To reduce this serious problem, an Al composition-graded AlGaN EBL structure is proposed to eliminate the two-dimensional electron gas at the interface between the GaN barrier and the EBL

Method used

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  • LED structure with aluminum-component-gradient electron blocking layer
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  • LED structure with aluminum-component-gradient electron blocking layer

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Embodiment 1

[0052] The invention utilizes the MOCVD growth technology to grow the LED epitaxial structure containing graded Al composition EBL on the sapphire substrate. Specifically include the following steps:

[0053] 1) Nucleation layer and buffer layer: In the MOCVD reaction chamber, the substrate was heated to 1100°C, treated in a hydrogen atmosphere for 5 minutes, and then the temperature was lowered to 530°C to grow a GaN nucleation layer with a thickness of 40nm; then the temperature was raised to At 1070°C, hydrogen is used as a carrier gas to grow a non-doped GaN buffer layer with a thickness of 3 μm;

[0054] 2) In the MOCVD reaction chamber, adjust the temperature to 1050°C and grow a Si-doped n-type GaN layer with a thickness of 3.5 μm. The doping concentration range of Si is: 5×10 18 cm -3 ;

[0055] 3) In the MOCVD reaction chamber, metal-organic sources TMGa and TMIn are introduced to grow multiple quantum well layers. The multiple quantum well layers are alternately g...

Embodiment 2

[0060] The invention utilizes the MOCVD growth technology to grow the LED epitaxial structure containing graded Al composition EBL on the sapphire substrate. Specifically include the following steps:

[0061] 1) Nucleation layer and buffer layer: In the MOCVD reaction chamber, the substrate was heated to 1100°C, treated in a hydrogen atmosphere for 5 minutes, and then the temperature was lowered to 530°C to grow a GaN nucleation layer with a thickness of 40nm; then the temperature was raised to At 1070°C, hydrogen is used as a carrier gas to grow a non-doped GaN buffer layer with a thickness of 3 μm;

[0062] 2) In the MOCVD reaction chamber, adjust the temperature to 1050°C and grow a Si-doped n-type GaN layer with a thickness of 3.5 μm. The doping concentration range of Si is: 5×10 18 cm -3 ;

[0063] 3) In the MOCVD reaction chamber, metal-organic sources TMGa and TMIn are introduced to grow multiple quantum well layers. The multiple quantum well layers are alternately g...

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Abstract

The invention relates to an LED structure with an aluminum-component-gradient electron blocking layer. Low-Al-component AlxGa1-xN is arranged on one side, which is in contract with an outer GaN barrier of a multiple-quantum well layer, of the aluminum-component-gradient electron blocking layer, the x is greater than or equal to 0 and smaller than or equal to 0.1, high-Al-component AlyGa1-yN is arranged on one side, which is in contact with a p-GaN layer, of the aluminum-component-gradient electron blocking layer, the y is greater than 0.1 and is smaller than or equal to 0.4, and the quantity of Al components in the middle of the aluminum-component-gradient electron blocking layer is gradually increased linearly. The low-Al-component AlGaN is arranged on one side, which is in contact with the GaN barrier, of the electron blocking layer, so that the density of polarization charges between interfaces of the electron blocking layer and the GaN barrier are effectively reduced, and a polarization field is weakened. Accordingly, the concentration of two-dimensional electron gas of the interfaces is greatly reduced, leakage current is decreased, the internal quantum efficiency of a device is improved in general, and the problem of attenuation of the quantum efficiency is solved.

Description

technical field [0001] The invention relates to an LED structure using a graded electron blocking layer of aluminum components, and belongs to the field of optoelectronic technology. Background technique [0002] III V group wide band gap direct band gap semiconductor has a series of advantages of wide band gap, high electron mobility, high thermal conductivity, high hardness, stable chemical properties, small dielectric constant and high temperature resistance, so it is used in high brightness blue It has a wide range of practical applications and huge market prospects in electronic power devices such as color light-emitting diodes, blue semiconductor lasers, and radiation-resistant, high-frequency, high-temperature, and high-voltage devices. GaN is the basic material of semiconductor Group III nitrides. It has a hard texture and extremely stable chemical properties. It does not react with acids and alkalis at room temperature, is insoluble in water, and has a relatively hi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/00
Inventor 王成新王强徐现刚李树强曲爽
Owner JIANGSU YONGDING COMM
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