Group III nitride compound semiconductor LED and production method thereof

Abstract

The invention provides a three-group nitrogen-compound semiconductor LED, which comprises a substrate, a buffer layer, an N-type semiconductor material layer, conformation active layers and a P-type semiconductor material layer, wherein the N-type semiconductor material layer has a first surface and a second surface; the first surface is in direct contact with the buffer layer; the second surface has a plurality of concave parts; the conformation active layers are formed on the second surface and in the concave parts; and the stress between the conformation active layers and the N-type semiconductor material layer can be released through the concave parts.

Description

technical field [0001] The invention relates to a group III nitrogen compound semiconductor light emitting diode and its manufacturing method, in particular to a group III nitrogen compound semiconductor light emitting diode capable of releasing stress between an active layer and an N-type semiconductor material layer and its manufacturing method. Background technique [0002] As light-emitting diode elements are widely used in different products, in recent years, materials for making blue light-emitting diodes have become an important research and development object in the current optoelectronic semiconductor material industry. At present, the materials of blue light-emitting diodes include zinc selenide (ZnSe), silicon carbide (SiC) and indium gallium nitride (InGaN). above eV. Since the gallium nitride series is a light-emitting material with a direct gap, it can produce high-brightness illumination light, and has the advantage of longer life than zinc selenide, which al...

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Problems solved by technology

However, the AlN non-planar layer 34 needs a special heat treatment process to be formed on the N-type cladding layer 33, so it is easy to affect the quality of the original underlying crystal epitaxial growth

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