Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

QLED, manufacturing method therefor and illuminating device

A quantum dot light-emitting and insulating layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problem that the performance of QLED needs to be improved, and achieve the effect of increasing the recombination probability and improving the overall efficiency.

Inactive Publication Date: 2017-02-01
TCL CORPORATION
View PDF8 Cites 38 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a QLED, a preparation method and a light-emitting device, aiming to solve the problem that the performance of QLED in the prior art still needs to be improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • QLED, manufacturing method therefor and illuminating device
  • QLED, manufacturing method therefor and illuminating device
  • QLED, manufacturing method therefor and illuminating device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] 1) The glass substrate containing ITO (120nm) was subjected to cleaning agent, acetone, IPA (isopropanol) and deionized water for 15 minutes, then dried, and treated with ozone plasma for 10 minutes;

[0060] 2) Depositing a hole injection layer on the glass substrate, the material of the hole injection layer is PEDOT:PSS (thickness 40nm), and then heating at 150°C for 15 minutes;

[0061] 3) Deposit a hole transport layer on the hole injection layer. The material of the hole transport layer is TFB with a thickness of 25nm. Specifically, it is spin-coated in a glove box to form a film, and then heated at 150°C for 30 minute;

[0062] 4) Depositing a first insulating layer on the hole transport layer, the material of the first insulating layer is PMMA, the thickness is 5nm, the solvent is acetone solution, and heated at 50°C for 10 minutes after film formation;

[0063] 5) Deposit a quantum dot light-emitting layer on the first insulating layer, the material of the quan...

Embodiment 2

[0068] 1) The glass substrate containing ITO (120nm) was subjected to cleaning agent, acetone, IPA (isopropanol) and deionized water for 15 minutes, then dried, and treated with ozone plasma for 10 minutes;

[0069] 2) Depositing a hole injection layer on the glass substrate, the material of the hole injection layer is PEDOT:PSS (thickness 40nm), and then heating at 150°C for 15 minutes;

[0070] 3) Deposit a hole transport layer on the hole injection layer. The material of the hole transport layer is TFB with a thickness of 25nm. Specifically, it is spin-coated in a glove box to form a film, and then heated at 150°C for 30 minute;

[0071] 4) Depositing a first insulating layer on the hole transport layer, the material of the first insulating layer is SiO 2 , the thickness is 5nm, the sol solution is spin-coated to form a film, and heated at 150°C for 30 minutes after the film is formed;

[0072] 5) Deposit a quantum dot light-emitting layer on the first insulating layer, t...

Embodiment 3

[0077] 1) The glass substrate containing ITO (120nm) was subjected to cleaning agent, acetone, IPA (isopropanol) and deionized water for 15 minutes, then dried, and treated with ozone plasma for 10 minutes;

[0078] 2) Depositing a hole injection layer on the glass substrate, the material of the hole injection layer is PEDOT:PSS (thickness 40nm), and then heating at 150°C for 15 minutes;

[0079] 3) Deposit a hole transport layer on the hole injection layer. The material of the hole transport layer is TFB with a thickness of 25nm. Specifically, it is spin-coated in a glove box to form a film, and then heated at 150°C for 30 minute;

[0080] 4) Depositing a first insulating layer on the hole transport layer, the material of the first insulating layer is PMMA, the thickness is 8nm, the solvent is acetone solution, and heated at 50°C for 10 minutes after film formation;

[0081] 5) Depositing a quantum dot light-emitting layer on the first insulating layer, the material of the q...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a QLED, a manufacturing method therefor and an illuminating device. The QLED orderly comprises a substrate, a bottom electrode, a hole injection layer, a hole transmission layer, a first insulation layer, a quantum dot illumination layer, a second insulation layer, an electron transmission layer and a top electrode. According to the QLED, one insulation layer is added between the electron transmission layer / hole transmission layer and the quantum dot illumination layer, injection of electrons and holes into the quantum dot illumination layer can be controlled via the insulation layer, and therefore current carrier balance can be controlled and optimized; one insulation layer is added on each of two sides of the quantum dot illumination layer, the electrons and holes can effectively be limited in the quantum dot illumination layer, recombination probability can be increased, and overall efficiency of an apparatus can be improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a QLED, a preparation method and a light emitting device. Background technique [0002] Quantum dot light-emitting diodes (QLED), on the one hand, have excellent optical properties of quantum dots, such as high luminous efficiency, high color purity, etc., and have huge potential advantages in display; on the other hand, they can be prepared by printing, which is more suitable for Production of large-size displays with low production costs. These technical characteristics make QLED a strong contender for next-generation display technology. [0003] In recent years, the device performance of QLED has improved very rapidly, especially the efficiency and life indicators of red and green devices are rapidly approaching the level of OLED. For the improvement of QLED performance, the optimization of device structure plays a very important role. The Bulovic group at MIT first propos...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/00H10K50/11H10K71/00
Inventor 钱磊杨一行曹蔚然向超宇
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com