QLED, manufacturing method therefor and illuminating device
A quantum dot light-emitting and insulating layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problem that the performance of QLED needs to be improved, and achieve the effect of increasing the recombination probability and improving the overall efficiency.
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Embodiment 1
[0059] 1) The glass substrate containing ITO (120nm) was subjected to cleaning agent, acetone, IPA (isopropanol) and deionized water for 15 minutes, then dried, and treated with ozone plasma for 10 minutes;
[0060] 2) Depositing a hole injection layer on the glass substrate, the material of the hole injection layer is PEDOT:PSS (thickness 40nm), and then heating at 150°C for 15 minutes;
[0061] 3) Deposit a hole transport layer on the hole injection layer. The material of the hole transport layer is TFB with a thickness of 25nm. Specifically, it is spin-coated in a glove box to form a film, and then heated at 150°C for 30 minute;
[0062] 4) Depositing a first insulating layer on the hole transport layer, the material of the first insulating layer is PMMA, the thickness is 5nm, the solvent is acetone solution, and heated at 50°C for 10 minutes after film formation;
[0063] 5) Deposit a quantum dot light-emitting layer on the first insulating layer, the material of the quan...
Embodiment 2
[0068] 1) The glass substrate containing ITO (120nm) was subjected to cleaning agent, acetone, IPA (isopropanol) and deionized water for 15 minutes, then dried, and treated with ozone plasma for 10 minutes;
[0069] 2) Depositing a hole injection layer on the glass substrate, the material of the hole injection layer is PEDOT:PSS (thickness 40nm), and then heating at 150°C for 15 minutes;
[0070] 3) Deposit a hole transport layer on the hole injection layer. The material of the hole transport layer is TFB with a thickness of 25nm. Specifically, it is spin-coated in a glove box to form a film, and then heated at 150°C for 30 minute;
[0071] 4) Depositing a first insulating layer on the hole transport layer, the material of the first insulating layer is SiO 2 , the thickness is 5nm, the sol solution is spin-coated to form a film, and heated at 150°C for 30 minutes after the film is formed;
[0072] 5) Deposit a quantum dot light-emitting layer on the first insulating layer, t...
Embodiment 3
[0077] 1) The glass substrate containing ITO (120nm) was subjected to cleaning agent, acetone, IPA (isopropanol) and deionized water for 15 minutes, then dried, and treated with ozone plasma for 10 minutes;
[0078] 2) Depositing a hole injection layer on the glass substrate, the material of the hole injection layer is PEDOT:PSS (thickness 40nm), and then heating at 150°C for 15 minutes;
[0079] 3) Deposit a hole transport layer on the hole injection layer. The material of the hole transport layer is TFB with a thickness of 25nm. Specifically, it is spin-coated in a glove box to form a film, and then heated at 150°C for 30 minute;
[0080] 4) Depositing a first insulating layer on the hole transport layer, the material of the first insulating layer is PMMA, the thickness is 8nm, the solvent is acetone solution, and heated at 50°C for 10 minutes after film formation;
[0081] 5) Depositing a quantum dot light-emitting layer on the first insulating layer, the material of the q...
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