85results about How to "Increase hole injection" patented technology

An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.

The invention provides an electroluminescent display with an organic and inorganic mixed luminescent layer suitable for the technical field of panel display. The display comprises a TFT array backboard, the TFT array backboard is provided with a first electrode, and the first electrode is connected with a source or drain electrode of the TFT array backboard; the first electrode is provided with a pixel defining layer, the pixel defining layer comprises multiple pixel units, the pixel units comprise three sub pixel pits isolated from one another, and the sub pixel pits are placed on the first electrode so that part of the first electrode is exposed out of the pixel defining layer; the part, exposed out of the pixel defining layer, of the first electrode is provided with the organic and inorganic mixed luminescent layer which comprises a red light quantum dot luminescent layer, a green light quantum dot luminescent layer and a blue light organic luminescent layer; and a second electrode is arranged on the organic and inorganic mixed luminescent layer.

An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)≧Ip(HIL)≧Ip(EML)−0.4 eV.

A measure for improving the light emission efficiency of a light emitting element without degrading characteristics of anode materials used in prior art is provided in manufacture of an upward emission type light emitting element. The present invention is characterized in that nitride or carbide of a metal element belonging to one of Group 4, 5, and 6 in the periodic table (hereinafter referred to as metal compound) is used as the material for forming an anode of a light emitting element. The metal compound has a work function equal to or larger than the work function of conventional anode materials. Therefore, injection of holes from the anode can be improved ever more. Also, with regard to conductivity, the metal compound is smaller in resistivity than ITO. It therefore can fulfil the function as a wire and can lower the drive voltage in the light emitting element compared to prior art.

The invention relates to a pyrene-containing organic compound and application thereof, and belongs to the technical field of semiconductors, wherein structure of the compound is represented by a general formula (1). The compound provided by the invention has relatively strong hole transport capability, and the hole injection and transport performance is improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound is applied to an OLED device, high film layer stability can be kept through device structure optimization, the photoelectric property of the OLED device can be effectively improved, and the service life of the OLEDdevice can be effectively prolonged.

The invention relates to a pyrene-containing organic compound and application thereof, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). The organic compound provided by the invention has relatively strong hole transport capability, and the hole injection and transport performance is improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound used as a light-emitting functional layer material of an OLED light-emitting device, the branched chains in the range of the invention can be matched to effectively improve the exciton utilization rate and radiation efficiency, reduce the efficiency roll-off under high current density, reduce the device voltage, improve the current efficiency of the device and prolong the service life of the device.

The invention relates to an amino-containing organic compound and application thereof, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). According to the invention, the compound has relatively strong hole transport capability, and hole injection and transport performances are improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound is appliedto an OLED device, high film layer stability can be kept through device structure optimization, the photoelectric property of the OLED device can be effectively improved, and the service life of the OLED device can be effectively prolonged.

The invention discloses a light emitting diode by taking a graphene film as a current carrier injection layer, which comprises a substrate, a current carrier injection layer, a luminescent layer, a graphene film, a lower metal electrode and an upper metal electrode, wherein the current carrier injection layer is manufactured on the substrate; the luminescent layer is manufactured on one side of the upper surface of the current carrier injection layer, and the width of the luminescent layer is smaller than the width of the current carrier injection layer to enable the current carrier injection layer to form a table top; the graphene film is manufactured on the luminescent layer; the lower metal electrode is manufactured on the table top of the current carrier injection layer; and the upper metal electrode is manufactured on the graphene film. According to the light emitting diode disclosed by the invention, a method that the graphene film is used as the current carrier injection layer is adopted, the hole injection is improved, the thickness of an electronic injection layer is reduced, and the cost is lowered.

A light emitting device is provided. The light emitting device includes a substrate, an N type semiconductor layer formed on the substrate, an active layer, an electron-blocking layer, and a P type semiconductor layer formed on the electron-blocking layer. An N side electrode is formed on a first portion of the N type semiconductor layer, and the active layer is formed on a second portion of the N type semiconductor layer. The electron-blocking layer is a super lattice multi-layer structure formed on the active layer, the P type semiconductor layer is formed on the electron-blocking layer, and a P side electrode is formed on a portion of the P type semiconductor layer.

The invention relates to an organic compound taking a dibenzofuran derivative as a core, and applications thereof, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). The invention also discloses a preparation method and applications of the compound. According to the invention, the compound has a high triplet state energy level, can effectively block energy loss, and is beneficial to energy transfer; the dibenzofuran derivative contained in the compound is used as a core, and is matched with a long-chain branch structure, so that the compound has the characteristics of strong rigidity, difficulty in crystallization and aggregation among molecules and good film-forming property; and when the compound is used asthe light-emitting functional layer material of an OLED light-emitting device, the service life and the efficiency of the device can be improved by matching with the branched chains within the rangeof the invention.

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a substrate, an anode layer, a hole injection functional layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer; a perfluorinated ion polymer is led into a hole injection layer or a hole transport layer, so that the hole injection functional layer can be formed. According to the quantum dot light-emitting diode and the preparation method thereof of the invention, the perfluorinated ion polymer is led into the hole injection layer or the hole transport layer, so that a work function gradually changed hole injection layer or hole transport layer can be formed, and therefore, a hole injection barrier at an interface can be reduced, and hole injection can be improved; and the structure of the device can be simplified, the use of a multilayer structure can be avoided, and therefore, hole injection can be improved, and preparation cost can be saved.

Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.

The invention discloses a compound taking a spirofluorene alkene structure as a core, a preparation method and applications thereof, wherein the structure of the compound is shown as a general formula(1). According to the invention, the compound has strong hole transport capability, wherein the hole injection and transport performance is improved under a proper HOMO energy level; under a proper LUMO energy level, the electron blocking effect is achieved so as to improve the recombination efficiency of excitons in a light-emitting layer; and with the application of the compound as the light-emitting functional layer material of an OLED light-emitting device, the utilization rate and the radiation efficiency of excitons can be effectively improved by matching with the branched chains in therange of the invention.

In a graphene-semiconductor heterojunction photodetector and a method of manufacturing the same according to the present inventive concept, a source electrode and a test electrode are formed to face each other on a graphene layer, and a drain electrode is formed in a direction perpendicular to a central region portion of the graphene layer, so that the drain electrode may be physically separated from the graphene layer. Further, charges formed at the central region portion of the graphene layer are transmitted to the drain electrode through a substrate, so that high photosensitivity may be secured, and a high output voltage may be secured for the applied light. Accordingly, the drain electrode is formed at a side surface of the graphene layer, so that the size of the drain electrode may be easily controlled, and a high output voltage may be obtained.