86results about How to "Increase hole injection" patented technology

An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.

A white organic light emitting device includes: an anode formed on a substrate; a first emissive layer, in which a first sub-emissive layer and a second sub-emissive layer are stacked, formed on the substrate; a second emissive layer, in which a third sub-emissive layer and a fourth sub-emissive layer are stacked, formed on the first emissive layer; a first intermediate layer supplying electrons to the first emissive layer and a second intermediate layer supplying holes to the second emissive layer, wherein the first and second intermediate layers are formed between the first emissive layer and the second emissive layer; and a cathode formed on the second emissive layer.

The invention provides an electroluminescent display with an organic and inorganic mixed luminescent layer suitable for the technical field of panel display. The display comprises a TFT array backboard, the TFT array backboard is provided with a first electrode, and the first electrode is connected with a source or drain electrode of the TFT array backboard; the first electrode is provided with a pixel defining layer, the pixel defining layer comprises multiple pixel units, the pixel units comprise three sub pixel pits isolated from one another, and the sub pixel pits are placed on the first electrode so that part of the first electrode is exposed out of the pixel defining layer; the part, exposed out of the pixel defining layer, of the first electrode is provided with the organic and inorganic mixed luminescent layer which comprises a red light quantum dot luminescent layer, a green light quantum dot luminescent layer and a blue light organic luminescent layer; and a second electrode is arranged on the organic and inorganic mixed luminescent layer.

The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased.

The invention relates to a pyrene-containing organic compound and application in OLED, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). The compound provided by the invention has relatively strong hole transport capability, and the hole injection and transport performance is improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound is used asa functional layer material of an OLED light-emitting device, exciton utilization rate and high fluorescence radiation efficiency can be effectively improved, efficiency roll-off under high current density is reduced, device voltage is reduced, current efficiency of the device is improved, and service life of the device is prolonged.

An organic EL device is provided with a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer and an electron injection layer between an anode and a cathode, wherein the hole injection layer is obtained by doping a hole transport material with an electron-accepting impurity, and the ionization potential Ip(HIL) of the material of the hole injection layer that composes the hole injection layer (also referred to as a hole injection material in the present description), the ionization potential Ip(HTL) of the hole transport material, and the ionization potential Ip(EML) of the material of the light-emitting layer (also referred to as a light-emitting layer material in the present description) respectively satisfy the relationship of Ip(EML)>Ip(HTL)≧Ip(HIL)≧Ip(EML)−0.4 eV.

The invention proposes an LED epitaxial wafer and a forming method thereof. The forming method comprises a first step of providing a substrate and forming a buffer layer on the substrate; a second step of forming a semiconductor material layer of a first doping type on the buffer layer; a third step of forming a quantum well structure on the semiconductor material layer of the first doping type; a fourth step of forming an electron blocking layer on the quantum well structure; and a fifth step of forming a semiconductor material layer of a second doping type on the electron blocking layer. The fourth step comprises forming a first AlxGa1-xN layer on the quantum well structure, and forming a second AlxGa1-xN layer on the first AlxGa1-xN layer. In the formation of the first AlxGa1-xN layer, a component x of an Al is gradually changed from a first component value to a component value, and the second component value is larger than the first component value. In the formation of the second AlxGa1-xN layer, a component x of an Al is constant. The LED epitaxial wafer and the forming method thereof can improve the internal quantum efficiency of LED chips, promote the light-emitting efficiency of the epitaxial wafer, and are suitable for the needs of high-power epitaxial wafers.

A measure for improving the light emission efficiency of a light emitting element without degrading characteristics of anode materials used in prior art is provided in manufacture of an upward emission type light emitting element. The present invention is characterized in that nitride or carbide of a metal element belonging to one of Group 4, 5, and 6 in the periodic table (hereinafter referred to as metal compound) is used as the material for forming an anode of a light emitting element. The metal compound has a work function equal to or larger than the work function of conventional anode materials. Therefore, injection of holes from the anode can be improved ever more. Also, with regard to conductivity, the metal compound is smaller in resistivity than ITO. It therefore can fulfil the function as a wire and can lower the drive voltage in the light emitting element compared to prior art.

The invention relates to a pyrene-containing organic compound and application thereof, and belongs to the technical field of semiconductors, wherein structure of the compound is represented by a general formula (1). The compound provided by the invention has relatively strong hole transport capability, and the hole injection and transport performance is improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound is applied to an OLED device, high film layer stability can be kept through device structure optimization, the photoelectric property of the OLED device can be effectively improved, and the service life of the OLEDdevice can be effectively prolonged.

Provided is an organic compound which is useful as a material for a highly efficient and durable organic EL element. The organic compound has excellent hole injection / transport performance and electron-stopping power, and is stable in the form of thin film and resistant to heat. Also provided is a highly efficient and durable organic EL element using the compound. An arylamine compound with triphenylamine structure, as represented by general formula (1) or (2); and an organic electroluminescent element which includes one pair of electrodes and one or more organic layers disposed therebetween, characterized in that the compound is used in at least one of the organic layers as the constituent material.

The invention relates to a pyrene-containing organic compound and application thereof, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). The organic compound provided by the invention has relatively strong hole transport capability, and the hole injection and transport performance is improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound used as a light-emitting functional layer material of an OLED light-emitting device, the branched chains in the range of the invention can be matched to effectively improve the exciton utilization rate and radiation efficiency, reduce the efficiency roll-off under high current density, reduce the device voltage, improve the current efficiency of the device and prolong the service life of the device.

A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.

The invention relates to an amino-containing organic compound and application thereof, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). According to the invention, the compound has relatively strong hole transport capability, and hole injection and transport performances are improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound is appliedto an OLED device, high film layer stability can be kept through device structure optimization, the photoelectric property of the OLED device can be effectively improved, and the service life of the OLED device can be effectively prolonged.

The invention discloses a light emitting diode by taking a graphene film as a current carrier injection layer, which comprises a substrate, a current carrier injection layer, a luminescent layer, a graphene film, a lower metal electrode and an upper metal electrode, wherein the current carrier injection layer is manufactured on the substrate; the luminescent layer is manufactured on one side of the upper surface of the current carrier injection layer, and the width of the luminescent layer is smaller than the width of the current carrier injection layer to enable the current carrier injection layer to form a table top; the graphene film is manufactured on the luminescent layer; the lower metal electrode is manufactured on the table top of the current carrier injection layer; and the upper metal electrode is manufactured on the graphene film. According to the light emitting diode disclosed by the invention, a method that the graphene film is used as the current carrier injection layer is adopted, the hole injection is improved, the thickness of an electronic injection layer is reduced, and the cost is lowered.

The invention discloses a compound taking triarylamine as a core, and application of the compound, and belongs to the technical field of semiconductors, wherein the structure of the compound providedby the invention is as represented by a general formula (1). The compound provided by the invention has high glass transition temperature and molecular thermal stability, proper HOMO and LUMO energy levels and high mobility, and by optimizing the structure of the device, the photoelectric property of an OLED device can be effectively improved, and the service life of the OLED device can be effectively prolonged.

The invention relates to a novel arylamine compound which, if used as a hole transport layer (HTL), a light emitting auxiliary layer (HT prime) or a hole injection layer (HIL), can increase hole injection and transport characteristics, thereby providing high efficiency and long life of a device.

A light emitting device is provided. The light emitting device includes a substrate, an N type semiconductor layer formed on the substrate, an active layer, an electron-blocking layer, and a P type semiconductor layer formed on the electron-blocking layer. An N side electrode is formed on a first portion of the N type semiconductor layer, and the active layer is formed on a second portion of the N type semiconductor layer. The electron-blocking layer is a super lattice multi-layer structure formed on the active layer, the P type semiconductor layer is formed on the electron-blocking layer, and a P side electrode is formed on a portion of the P type semiconductor layer.

The invention relates to an organic compound taking triarylamine as a core, and a preparation method and an application thereof, and belongs to the technical field of semiconductors. The structure ofthe compound is represented by general formula (1) shown in the description. The invention also discloses the preparation method and the application of the compound. The compound has a high hole transport capability, and has improved hole injection and transport performances under a proper HOMO energy level; the compound has an electron blocking effect under a proper LUMO energy level to improve the recombination efficiency of excitons in a light-emitting layer; and when the compound is used as a light-emitting functional layer material of an OLED device, the exciton utilization rate and the radiation efficiency can be effectively improved by matching with the branched chains in the range of the invention.

The invention relates to an organic compound taking a dibenzofuran derivative as a core, and applications thereof, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). The invention also discloses a preparation method and applications of the compound. According to the invention, the compound has a high triplet state energy level, can effectively block energy loss, and is beneficial to energy transfer; the dibenzofuran derivative contained in the compound is used as a core, and is matched with a long-chain branch structure, so that the compound has the characteristics of strong rigidity, difficulty in crystallization and aggregation among molecules and good film-forming property; and when the compound is used asthe light-emitting functional layer material of an OLED light-emitting device, the service life and the efficiency of the device can be improved by matching with the branched chains within the rangeof the invention.

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprises a substrate, an anode layer, a hole injection functional layer, a quantum dot light-emitting layer, an electron transport layer and a cathode layer; a perfluorinated ion polymer is led into a hole injection layer or a hole transport layer, so that the hole injection functional layer can be formed. According to the quantum dot light-emitting diode and the preparation method thereof of the invention, the perfluorinated ion polymer is led into the hole injection layer or the hole transport layer, so that a work function gradually changed hole injection layer or hole transport layer can be formed, and therefore, a hole injection barrier at an interface can be reduced, and hole injection can be improved; and the structure of the device can be simplified, the use of a multilayer structure can be avoided, and therefore, hole injection can be improved, and preparation cost can be saved.

The invention discloses a NiO / SiC heterogeneous emitter junction structure. The invention also discloses a SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction. The SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction comprises a substrate and an insulating dielectric film; an n-SiC buffer layer is manufactured at the upper surface of the substrate; a p-SiC buffer layer is manufactured at the upper surface of the n-SiC buffer layer; a p-SiC long base region is manufactured at the upper surface of the p-SiC buffer layer; an n-SiC short base region is manufactured at the upper surface of the p-SiC long base region; a p-NiO emitter region is manufactured at the upper surface of the n-SiC short base region; the upper end surface of each lug boss of the p-NiO emitter region is covered with positive electrodes; and the lower end surface of the substrate is covered with negative electrodes. The SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction has a higher hole injection capacity; and the dredging performance is improved obviously.

The invention relates to synthesis of a cyclic metal iridium coordination compound. Fluorene with hole transmitting capacity and triphenylamino group are simultaneously introduced into a cyclic metal ligand, thereby effectively enhancing the hole injection and transmitting capacities of the luminescent layer and being beneficial to improving the electroluminescent property of the devices. The cyclic metal iridium coordination compound is a luminescent material, and can obtain the high-efficiency orange-yellow-light organic electrophosphorescence devices when being used for preparing organic electroluminescent devices. The cyclic metal iridium coordination compound and traditional blue-light iridium coordination compound FIrPic are proportionally mixed as the luminescent layer to obtain the high-efficiency white-light organic electroluminescent devices, thereby providing a material base for application of the organic electroluminescent devices in white-light illumination.

Method for manufacturing organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process.

The invention discloses a compound taking a spirofluorene alkene structure as a core, a preparation method and applications thereof, wherein the structure of the compound is shown as a general formula(1). According to the invention, the compound has strong hole transport capability, wherein the hole injection and transport performance is improved under a proper HOMO energy level; under a proper LUMO energy level, the electron blocking effect is achieved so as to improve the recombination efficiency of excitons in a light-emitting layer; and with the application of the compound as the light-emitting functional layer material of an OLED light-emitting device, the utilization rate and the radiation efficiency of excitons can be effectively improved by matching with the branched chains in therange of the invention.