85results about How to "Increase hole injection" patented technology

Provided is a conducting polymer composition including a conducting polymer and an ionic conjugated polymer. The conducting polymer composition includes the ionic conjugated polymer having a conjugated structure, in addition to the conducting polymer, and thus, can enhance hole injection and transport capability. Furthermore, ionization potential and work function can be easily adjusted by chemically tuning the backbone of the ionic conjugated polymer. In addition, the conducting polymer composition can be dissolved in water, alcohol, or a polar organic solvent, thereby enabling a solution process and rendering spin-coating easier.

According to one aspect of the present invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide is applied as an electrode on the side of injecting a hole (a hole injection electrode; an anode) instead of the conventional conductive transparent oxide layer such as ITO. In addition, according to another aspect of the invention, a laminated structure of conductive transparent oxide layers containing silicon or silicon oxide, each of which content is different, is applied as a hole injection electrode. Preferably, silicon or a silicon oxide concentration of the conductive layer on the side where it is connected to a TFT ranges from 1 atomic % to 6 atomic % and a silicon or silicon oxide concentration on the side of a layer containing an organic compound ranges from 7 atomic % to 15 atomic %.

An object is to improve a positive hole injection efficiency into an active layer in a nitride semiconductor light-emitting device. The nitride semiconductor light-emitting device is formed by stacking nitride semiconductor crystals each of which contains Al and has a polar or semipolar surface either serving as a growth face. The device includes an active layer (103), and first and second composition-graded layers (102, 104). The active layer (103) is interposed between the first and second composition-graded layers (102, 104). Each one of the first and second composition-graded layers is composition-graded so that an Al composition value is rendered smaller as each one of the first and second composition-graded layers (102, 104) comes close to a side where a sum of spontaneous polarization and piezoelectric polarization is negative.

A white organic light emitting device includes: an anode formed on a substrate; a first emissive layer, in which a first sub-emissive layer and a second sub-emissive layer are stacked, formed on the substrate; a second emissive layer, in which a third sub-emissive layer and a fourth sub-emissive layer are stacked, formed on the first emissive layer; a first intermediate layer supplying electrons to the first emissive layer and a second intermediate layer supplying holes to the second emissive layer, wherein the first and second intermediate layers are formed between the first emissive layer and the second emissive layer; and a cathode formed on the second emissive layer.

The invention relates to a pyrene-containing organic compound and application in OLED, and belongs to the technical field of semiconductors, wherein the structure of the compound is represented by a general formula (1). The compound provided by the invention has relatively strong hole transport capability, and the hole injection and transport performance is improved under a proper HOMO energy level; under the proper LUMO energy level, the electron blocking effect is achieved, and the recombination efficiency of excitons in the light-emitting layer is improved; and when the compound is used asa functional layer material of an OLED light-emitting device, exciton utilization rate and high fluorescence radiation efficiency can be effectively improved, efficiency roll-off under high current density is reduced, device voltage is reduced, current efficiency of the device is improved, and service life of the device is prolonged.

A measure for improving the light emission efficiency of a light emitting element without degrading characteristics of anode materials used in prior art is provided in manufacture of an upward emission type light emitting element. The present invention is characterized in that nitride or carbide of a metal element belonging to one of Group 4, 5, and 6 in the periodic table (hereinafter referred to as metal compound) is used as the material for forming an anode of a light emitting element. The metal compound has a work function equal to or larger than the work function of conventional anode materials. Therefore, injection of holes from the anode can be improved ever more. Also, with regard to conductivity, the metal compound is smaller in resistivity than ITO. It therefore can fulfil the function as a wire and can lower the drive voltage in the light emitting element compared to prior art.

The invention discloses a NiO / SiC heterogeneous emitter junction structure. The invention also discloses a SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction. The SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction comprises a substrate and an insulating dielectric film; an n-SiC buffer layer is manufactured at the upper surface of the substrate; a p-SiC buffer layer is manufactured at the upper surface of the n-SiC buffer layer; a p-SiC long base region is manufactured at the upper surface of the p-SiC buffer layer; an n-SiC short base region is manufactured at the upper surface of the p-SiC long base region; a p-NiO emitter region is manufactured at the upper surface of the n-SiC short base region; the upper end surface of each lug boss of the p-NiO emitter region is covered with positive electrodes; and the lower end surface of the substrate is covered with negative electrodes. The SiC light-activated thyristor with the NiO / SiC heterogeneous emitter junction has a higher hole injection capacity; and the dredging performance is improved obviously.