The invention discloses an NiO-doped light-emitting
diode and a preparation method therefor, and the method comprises the steps: enabling
nickel salt, first doped salt and second doped salt to be mixed in deionized water or 2-methoxyethanol, adding
glycine or
acetylacetone, carrying out heating, and preparing LixMyNiO, wherein the first doped salt is
lithium salt, and the second doped salt is
magnesium salt,
copper salt or
zinc salt. In LixMyNiO, M is Mg, Cu or Zn, x is greater than zero but less than one, y is greater than zero but less than one. According to the invention, an LixMyNiO film is low in preparation temperature, and can be prepared under the temperature 150-200 DEG C. Moreover, a little of
ammonia water is added in the preparation process of the LixMyNiO film, thereby guaranteeing the stability of precursor solution. The method improves the stability of hole transmission under the condition of guaranteeing that the
work function of
nickel oxide is not reduced, and reduces the hole injection barrier. The method enables the light-emitting
diode to be higher in efficiency.