316results about How to "Lower injection barrier" patented technology

The invention relates to a flexible organic light emitting transistor display device, which comprises a substrate (1), a source electrode layer (2a), a drain electrode layer (2b), a charge injection layer (3), organic semiconductor layers (4, 5 and 6), a gate insulating layer (7) and a gate electrode layer (8), wherein the source and drain electrode layers (2a and 2b) are made of graphene. The charge injection layer is added, a charge injection material is selected, the drain and source electrode layers are made of the graphene, so that the flexible active matrix organic light emitting transistor display device is transparent and high in aperture opening ratio and brightness, low in operating voltage and long in service life.

The invention provides a QLED, a preparation method and a display apparatus. The QLED comprises a substrate, a positive electrode, a hole transport layer, a light emitting layer, an electron transport layer and a negative electrode in sequence; the light emitting layer comprises quantum dots and a dispersing agent with a dendritic molecular structure; and the quantum dots are dispersed among side chains of the dendritic molecules. Compared with long-chain ligands on the surfaces of the quantum dots, an insulating layer is not formed on the surfaces of the quantum dots in the dendritic molecular structure, so that charge injection potential barrier of impedance, holes and electrons to the quantum dots on the surfaces of the quantum dots can be greatly lowered; in addition, the spacings between the quantum dot molecules, between quantum dots and the electron transport layer, and between the quantum dots and the hole transport layer can be closer, thereby improving the concentration of the quantum dots in the light emitting layer, and the exciton energy transfer efficiency; and by virtue of the OLED, the dispersity and yield of the quantum dots can be ensured while the current carrier energy transfer validity can be reinforced, thereby enhancing the light emitting efficiency of the OLED and the luminance of the OLED display apparatus.

The invention discloses a NiO composite film and a quantum dot light-emitting device and the preparation and application thereof, which utilizes an M: NiO / NiO composite film structure, an M: NiO film layer of NiO doped by M metal and an M: NiO / NiO structure formed composite material film with NiO composition gradient composed by the NiO film layer, wherein M metal can be any metal of Li, Mg and Cu or an alloy. The M mole ratio in the M metal doped NiO film layer ranges between 1-5 mol %. The invention can not only solve the problem of hole injection, but also improves the balance of carrier injection in the device with the result being the improvement in the performance and stability of the device and the solution to the problem of short life of the existing quantum dot light-emitting device. In addition to the cathode using vacuum evaporation, all the function layers, including the inorganic hole composite layer, use the solution spin coating method for the film preparation. The materials can be obtained easily, the method is simple and the cost is low.

The invention provides an organic light-emitting display device. The organic light-emitting device comprises a positive electrode layer, a negative electrode layer and an organic light-emitting dielectric layer, wherein the organic light-emitting dielectric layer is arranged between the positive electrode layer and the negative electrode layer and comprises a hole injection layer, a hole transmission layer, a first hybrid layer, a light-emitting layer, an electron transmission layer and an electron injection layer which are sequentially arranged, the first hybrid layer comprises a bipolar main body material and is doped with at least one of a material with an electron blocking function and a material with a hole control function, and the bipolar main body material has a function of simultaneously transmitting holes and electrons. By the organic light-emitting device, injection barriers of carriers of the holes and the electrons in the organic light-emitting device can be reduced, the injection rate of the carriers and the position of a carrier combination region are controlled, the carrier combination efficiency is improved, so that the organic light-emitting device with high efficiency and long lifetime is obtained.

The invention discloses a hole injection layer manufacturing method, a hole injection layer and a QLED device. The method comprises the steps of A, cleaning an ITO substrate base plate, and then drying the ITO substrate base plate; B, carrying out surface treatment on the ITO substrate base plate; and C, attaching transition metal oxides to the surface of the ITO substrate base plate so as to act as a hole injection layer of the QLED device, wherein the transition metal oxides are attached to the surface of the ITO substrate base plate through a sol-gel method. According to the invention, the transition metal oxides, which mainly comprise molybdenum oxide, vanadium oxide, tungsten oxide and the like, are adopted to act as hole injection layer materials of the QLED device so as to adjust a work function of the ITO substrate, so that the work function of the hole injection layer materials of the QLED device is enabled to be effectively adjusted in a large range, and red, green and blue quantum dots are facilitated to be able to find hole injection layer materials with good energy level matching according to the positions of valence bands, thereby effectively reducing the injection barrier of holes, and improving the luminous efficiency of the device.

The invention is applicable for the field of a light emitting diode, and provides a quantum dot light emitting diode containing a doped hole injection layer and a fabrication method of the quantum dot light emitting diode. The quantum dot light emitting diode comprises a substrate, an anode layer, the doped hole injection layer, a hole transfer layer, a quantum dot light emitting layer, an electron transfer layer and a cathode layer which are sequentially arranged in a lamination way, the doped hole injection layer is made of P-doped Poly-TPD, and a doping agent in the P-doped Poly-TPD is F4-TCNQ.

The invention provides an inverted type organic electroluminescence structure. The inverted type organic electroluminescence structure comprises a substrate, and a cathode layer, an electron injection layer, an electron transport layer, a luminous layer, a hole injection layer, a hole transport layer and an anode layer, which are sequentially arranged on the substrate from bottom to top, wherein the anode layer comprises a first conducting layer, a metal layer and a second conducting layer, and the cathode layer contains chemical compositions of magnesium, aluminum, silver, ytterbium and samarium and alloy of the above compositions, or the magnesium, the aluminum, the silver, the ytterbium and the samarium mixed with zinc oxide. The inverted type organic electroluminescence structure reduces the electron injection potential barrier, and improves hole injection capacity.

The present teachings provide methods for depositing and patterning organic light-emitting device (OLED) buffer layers. The method can use a thermal printing process and one or more additional processes, such as vacuum thermal evaporation (VTE), to create an OLED stack. OLED stack structures are also provided wherein which at least one of the charge injection or charge transport layers is formed by a thermal printing method at a high deposition rate. The organic layer can be subject to post-deposition treatment such as baking. The structure of the organic layer can be amorphous, crystalline, porous, dense, smooth, rough, or a combination thereof, depending on deposition parameters and post-treatment conditions. The organic layer can improve light out-coupling efficiency of an OLED, increase conductivity, decrease index of refraction, and / or modify the emission chromaticity of an OLED.

The invention discloses a quantum dot electroluminescent device and a preparation method thereof. In order to reduce the hole injection barrier of a quantum dot light emitting diode device, small molecular materials containing polar coordination groups of lone pair electrons, such as materials containing amino groups, mercapto groups or phosphorus groups, are dissolved in a proton solvent throughin-situ ligand replacement and the obtained product is applied to a filmed quantum dot layer after heat treatment during the preparation of the quantum dot light emitting diode device. Because of thepolar coordination groups (amino groups, mercapto groups and phosphorus groups) of lone pair electrons, a larger interface dipole is introduced, the hole injection barrier is reduced, the hole electron flow is balanced, and the device performance is improved. The surface defects of the quantum dot film are passivated, and exciton quenching is reduced. The method has the characteristics of wide applicability, high efficiency and simplicity.

The invention provides a core-shell quantum dot and a preparation method thereof as well as an electroluminescent device comprising the core-shell quantum dot. A core of the core-shell quantum dot isCdSeXS(1-X) and a shell layer of the quantum dot comprises a first shell layer and a second shell layer; the first shell layer is selected from one or more of ZnSe, ZnSeYS(1-Y) and Cd(Z)Zn(1-Z)S; thesecond shell layer which covers the first shell is Cd(Z)Zn(1-Z)S or ZnS; the maximum emission peak value of the core-shell quantum dot is less than or equal to 480nm, and X, Y and Z are all greater than 0 and less than 1. The bandwidth of a CdSeXS(1-X) core is relatively small and a HOMO energy level is relatively shallow, so that the core-shell quantum dot is easily injected into a hole; the material energy band of the first shell layer is located between the core and the second shell layer, so that the defects of the core are reduced and the photoluminescence efficiency of the quantum dot isimproved; the carrier injection potential barrier is reduced, and the efficiency and service life of an external quantum are improved; the quantum dot is passivated by the second shell layer, that the stability of a whole body is improved.

The invention relates to an nc-Si based luminescent device based on a controllable asymmetric quantum well structure doping with voltage barrier and a preparation method thereof, which belongs to the technical field of nano-electronics and nano-photoelectronic device material. The luminescent device is deposited with an amorphous carborundum thin film doping with boron as a cavity barrier layer on a semiconductor substrate; the cavity barrier layer is deposited with an nc-Si film which is generated by the anneal of an amorphous silicon film and is used as a luminescent active layer; the luminescent active layer is deposited with an amorphous silicon dioxide thin film doping with phosphor which is used as an electronic barrier layer; the electronic barrier layer is deposited with a conductive film which is left with an optical window and used as the cathode of the luminescent device, while the back side of the semiconductor substrate is deposited with a conductive film which is used as the anode of the luminescent device. The technical process of the invention relates to that a multi-layer film with the quantum well structure is prepared; then annealing and crystallization are processed and the electrodes of the device are prepared. The luminescent device has the advantages of high efficient and balanced current carrier injection structure and the Si / SiO2 luminescent system, which provides the possibility of the realization of a high efficient Si-based luminescent device.

The invention discloses an optical thin film based on an inorganic perovskite quantum dot and a conjugated organic small molecule eutectic structure. The optical thin film is characterized in that theoptical thin film based on the inorganic perovskite quantum dot and conjugated organic small molecule eutectic structure is obtained by commonly dispersing the inorganic perovskite quantum dot and aconjugated organic small molecule into an organic solvent to form a composite dispersion solution, and carrying out a dipping and drawing, inkjet printing or spin-coating technology on the composite dispersion solution to form the film. According to the optical thin film disclosed by the invention, components can be quantitatively controlled based on components of the composite dispersion solutionto form the eutectic structure, and multiple beneficial effects are provided for functionalized application of the thin film; the fluorescence quantum efficiency and the chemical stability of a quantum dot material can be improved; the thin film can be used for detecting high-energy rays based on absorption properties and a photophysical process of the material designed by the system; a conjugated organic small molecule material with high mobility can reduce energy loss caused by charge injection and transmission under a current driving condition.

The invention provides an inorganic perovskite quantum dot lighting diode tube, comprising an anode, a hole injection layer, a hole transmission layer, a quantum dot lighting layer, an electronic injection layer and a cathode which are laminated in order; the quantum dot lighting layer is made of halogen surface modified inorganic perovskite quantum dot, and the halogen surface modified inorganic perovskite quantum dot is the quantum dot after a part of organic ligand at the surface of the inorganic perovskite quantum dot is replaced by halogen, wherein the ratio between the halogen and the inorganic perovskite quantum dot is 0.5-12.5 mmol / L: 1 mg.

The invention relates to an organic light-emitting device (OLED). The hole transport layer used by the OLED comprises a first hole material layer, a transition layer formed by a first hole transport material and a second hole transport material, and a second hole material layer, wherein the first hole material layer, the transition layer, and the second hole material layer are stacked. The first hole material layer is arranged close to a first electrode layer. The dosage concentration of the second hole transport material in the transition layer is gradually increased along the direction far from the first hole transport material layer. An energy level difference between the HOMO of the second hole transport material HTL2 and the HOMO of the host material of a light-emitting layer is less than 0.5eV, namely HTL2HOMO-HOSTHUMO is less than or equal to 0.5eV. The energy gap Eg of the HTL2 is over 0.3eV greater than that of the light-emitting host, namely HTL2Eg-HOSTEg is less than or equal to 0.3eV. The energy gap of the host material of the light-emitting layer is from 2.5 to 3.5eV. The hole transport layer forms continuous concentration gradient structure by using the evaporation of a linear evaporator source so as to reduce the number of evaporation chamber evaporation sources and greatly reduce hole injection barrier. Therefore, the voltage of the device can be obviously decreased and efficiency is increased.

The invention belongs to the technical field of display application and provides a QLED device, a display device and a preparation method of the display device. The QLED device comprises a substrate,a bottom electrode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, a top electrode and a hole injection layer, wherein the substrate, the bottom electrode, the hole transport layer, the quantum dot light-emitting layer, the electron transport layer and the top electrode are sequentially arranged; the hole injection layer is prepared through doping a hole injection material and an interface-modified material; and the interface-modified material is a p-type conductive material. According to the QLED device, the hole injection layer is prepared through doping the hole injection material and the interface-modified material, so that the hole transport capacity and the ionization energy are improved and the hole injection barrier is reduced, thereby effectively improving the electric conductivity, reducing driving voltage, improving injection balance of charge carriers, simultaneously reducing charges of the device, improving the power efficiency ofthe device and prolonging the service life of the device.

The invention provides a low-voltage and high-efficiency organic LED. The low-voltage and high-efficiency organic LED comprises a glass substrate with an ITO, a hole-transmission layer, a p type doped luminescence layer, an i type intrinsic luminescence layer, an n type doped luminescence layer, an electronic transmission layer, a composite electron injection layer and a cathode which are sequentially overlapped to form an overlapping layer; the p type doped luminescence layer is prepared through hole transmission material in which blue fluorescent dye is doped; the i type intrinsic luminescence is prepared through blue fluorescent dye; the n type doped luminescence layer is prepared through the electron transmission material in which blue fluorescent dye is doped; the three luminescence layers are named p-i-n type luminescence layer; and the composite electronic injection layer is prepared through cesium carbonate in which a thin aluminum layer is inserted. The low-voltage and high-efficiency organic LED has the advantages that the composite electron injection layer with a thin aluminum layer inserted into the cesium carbonate layer and the p-i-n type luminescence layer are arranged, so that the luminescence efficiency is improved, and the reduction of the efficiency is delayed; the driving voltage is low, the luminance is high, the efficiency is high, the stability is improved, and the preparation process is simple.

To provide a device whose life is less likely to be reduced by deterioration of a light-emitting layer material, an EL display device includes: a pixel electrode, for each pixel, above a substrate; auxiliary wiring in a different region, above the substrate, from the pixel electrode; a transition metal oxide layer on the pixel electrode and the auxiliary wiring; a light-emitting layer in a region, above the transition metal oxide layer, corresponding to the pixel; a common electrode continuously above the auxiliary wiring and the light-emitting layer, and electrically connected to the auxiliary wiring; and a material deterioration suppressing layer continuously on a portion of the transition metal oxide layer above the auxiliary wiring and the light-emitting layer, mainly containing barium, and having a thickness equal to or greater than a size of a single barium atom and smaller than 10 nm.

The invention discloses an organic light emitting diode device, a display panel and a display device. The organic light emitting diode device is mainly characterized in that existing serial top-emitting OLED devices are improved, a homojunction structure is utilized and functional layers of the top-emitting OLED devices connected in series are improved, so that each function layer comprises a hole injection layer, a hole transmission layer, a hole side light-emitting layer, an electron injection layer, an electron transmission layer, an electron side light-emitting layer and at least one group of charge producing layers a and charge producing layers b located between the hole side light-emitting layer and the electron side light-emitting layer, the hole injection layer, the hole transmission layer and the hole side light-emitting layer are sequentially arranged on the side close to an anode, the electron injection layer, the electron transmission layer and the electron side light-emitting layer are sequentially arranged on the side close to a cathode. A first light-emitting unit ...and an Nth light-emitting unit of each serial top-emitting OLED device are of homojunction structures, the using categories of organic materials are decreased, injection potential barriers of charge carriers in the devices are eliminated, the charge carrier injection efficiency and the efficiency of the devices are improved, and drive voltage of the devices is reduced.

The invention provides a quantum dot light emitting diode comprising an anode, a hole injection layer, a hole transmission layer, a quantum dot luminescent layer, an electron transmission layer and a cathode which are arranged in turn. The quantum dot light emitting diode also comprises an anode modification layer which is arranged on the anode and the hole injection layer. The anode modification layer includes fluorine containing organic material. According to the quantum dot light emitting diode, the fluorine containing organic material acts as the anode modification layer which is arranged between the anode and the hole injection layer, and the fluorinated substituent exerts a high electron withdrawing effect by its high electronegativity so as to enhance hole injection; besides, the chemical property of the fluorine containing organic material is stable so that the luminous efficiency of the quantum dot light emitting diode can be stably enhanced and the service life can be prolonged.

The invention provides a quantum dot, an ink and a quantum dot light emitting display device. The quantum dot of the core-shell structure includes C / B1 / A1...... / Bn / An / Bn+1 / An+1, or C / B1 / A1...... / Bn / An / Bn+1, wherein C is a core, B1 to Bn+1 shell layers are Class B shell layers, A1 to An+1 shell layers are Class A shell layers, the shell layers are arranged away from the C core in an ascending order, and the Class A shell layers and the Class B shell layers are crosswise arranged to form a plurality of adjacent A / B shell groups, n is an integer and n is greater than or equal to 1; the C core and the Class A shell layers are used for luminescence; in the C / B core shell group and any A / B shell group, the conduction band bottom of the B type shell layer is higher than the conduction band bottom of the A shell layer or the C core, and the valence band top of the B shell layer is lower than the valence band top of the A shell layer or the C core. Each shell layer of the quantum dot forms a multi-layer structure with alternating band gaps, and achieves the effect of improving the luminous efficiency while maintaining the stability of the quantum dots.

The invention belongs to the technical field of organic synthesis, and particularly relates to a phenyl branching luminescent material and an organic electroluminescent device thereof. According to the invention, through fine design of a hole-transport material subjected to branching twisting, a core light-emitting layer material is further selected, and a high-refraction low-absorption covering layer material is introduced, so that compared with the prior art, the device is obviously improved in comprehensive performance such as starting voltage, light emitting brightness, current efficiency,light color and thermal stability, and is obviously improved in performance stability under a state that the device is operated and heat is accumulated.

The invention provides an organic electroluminescent light emitting device which comprises a conductive anode substrate, a hole injection layer, a hole transmission layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transmission layer, an electron injection layer and a cathode which are stacked in order. The material of the electron blocking layer is a mixture of a first compound and a phosphorescent material. The first compound is a bipolar metal oxide, a lithium salt or a silicone small molecule. According to the organic electroluminescent light emitting device, the transmission rate of a hole can be improved by the electron blocking layer, electrons can be blocked at one side of electron blocking layer close to the light emitting layer, the hole can be blocked at one side of the hole blocking layer close to the light emitting layer by the hole blocking layer, thus the recombination area of excitons are controlled in the light emitting layer, and the light emitting efficiency of the organic electroluminescent light emitting device is improved. In addition, the invention also provides the preparation method of the organic electroluminescent light emitting device.

The invention provides an OLED device. The OLED device structurally comprises a substrate (1), a transparent anode (2), a hole injection layer (3), a luminescent layer (4), an electron injection layer (5) and a cathode (6), wherein the luminescent layer (4) is formed by host fluorescent materials and object phosphor materials in a doping mode, and polyfluorene materials which have both hole transport groups and electro-transport groups are adopted by the host fluorescent materials. The OLED device can effectively reduce barriers of hole injection and electron injection and has high quantum efficiency and carrier transport capability.

The invention provides an oil-soluble blue-light quantum dot and a preparation method thereof. The oil-soluble blue-light quantum dot comprises a water-soluble blue-light quantum dot, a water-soluble metallic nano-particle layer coating the surface of the water-soluble blue-light quantum dot, and an oil-soluble ligand layer formed on the surface of the water-soluble metallic nano-particle layer. The preparation method comprises the following steps: providing a mixed solution of the water-soluble blue-light quantum dot and water-soluble metallic nano-particles, adjusting a pH value to 7 to 10, subjecting the obtained mixed solution to intense agitation and carrying out a reaction at a room temperature for 3 to 10 h so as to obtain the water-soluble blue-light quantum dot coated by the metallic nano-particles; and providing an oil-soluble surface modifying agent containing a mercapto group, dissolving and mixing the water-soluble blue-light quantum dot coated by the metallic nano-particles and the oil-soluble surface modifying agent containing the mercapto group, and carrying out heat treatment in an inert atmosphere so as to obtain the oil-soluble blue-light quantum dot.

The invention discloses a PEIE intervention standard inverted QLED device and a preparation method thereof. The preparation method comprises the following steps: (1) depositing a ZnO electron injection layer on a flexible substrate; (2) spin-coating a PEIE solution on the ZnO electron injection layer to prepare an interface modification layer A; (3) depositing a quantum dot light-emitting layer onthe interface modification layer A, wherein the quantum dot light-emitting layer is made of ZnCdSeS / ZnS green light quantum dots; (4) depositing a PEIE solution on the quantum dot light-emitting layer to prepare an interface modification layer B; (5) depositing a hole transport layer and a hole injection layer on the interface modification layer B, wherein the hole transport layer is one or moreof PVK, TFB, poly-TPD, TCTA and CBP, and the hole injection layer is PEDOT: PSS; and (6) evaporating a top electrode, wherein the top electrode is an Al, Ag, Cu, Au or alloy electrode, and after evaporation of the device is completed, packaging the device.

The invention provides a preparation method of an In-doped MoO3 thin film and application of the In-doped MoO3 thin film in a QLED. The preparation method of the In-doped MoO3 thin film comprises the steps of: providing indium salts and MoO3, dissolving the indium salts and the MoO3 in an organic solvent to form a mixed solution, adding inorganic acid into the mixed solution, then carrying out heat treatment on the solution to obtain a precursor solution, wherein the temperature of heat treatment ranges from 50 to 80 DEG C; and providing a substrate, depositing the precursor solution on the substrate by adopting a solution processing method, and then carrying out annealing treatment to obtain the In-doped MoO3 thin film, wherein the annealing temperature ranges from 150 to 350 DEG C, and the time ranges from 15 to 30 min.

The invention discloses a short-circuit-preventing top-emission OLED device and a manufacturing method thereof. Specifically, the OLED device comprises a substrate, a short-circuit-preventing reflective anode, a hole-injection layer, a hole-transporting layer, a light emitting layer, an electronic transmission layer also serving as a spacing layer, an electronic injection layer and a semi-transparent cathode. The manufacturing method comprises the following steps of (1) preprocessing the substrate; (2) performing vapor plating on an aluminum layer in the anode; (3) performing vapor plating on a silver layer in the anode; (4) performing vapor plating on the hole-injection layer; (5) performing vapor plating on the hole-transporting layer; (6) performing vapor plating on the light emitting layer; (7) performing vapor plating on the electronic transmission layer; (8) performing vapor plating on the electronic injection layer; (9) and performing vapor plating on the cathode. The device which adopts an aluminum / silver composite anode makes the high reflectivity characteristics of silver fully developed and meanwhile has the advantage of silver overcoming a device short circuit problem. The short-circuit problem of a pure silver anode is thoroughly solved. Meanwhile, the cathode thickness is optimized. Good conductive capabilities and relatively high light transmittance are further kept.

The invention provides a class of ethylize-pyrazine and quinoxaline derivative and a preparation method thereof, and belongs to the technical field of research of photoluminescence. Ethyl-pyrazine and quinoxaline are used by these derivatives as molecular light nuclei, and the derivatives are connected with the functional groups with different structures and different levels of conjugates at the location of nuclear 9, 10; the synthesis method comprises the steps that 4, 7-dibromine-2,1,3-diazosulfide is used as the raw material, after a series of processes of nitration, reduction and condensation, and the like, the light nuclei connecting two bromide ethyl pyrazine and quinoxaline molecular is synthesized at the location of 9, 10, and then through the Suzuki coupling reaction of the carbazole phenylboronic acid with the neighbor and the space in between, the target derivatives are prepared. These derivatives in the ultraviolet-visible light zone have strong absorption abilities and the diluted solutions are able to emit strong fluorescence, the emission wavelengths are respectively at 450 nm or so, and are within the range of blue-ray, and can be used as materials for organic electroluminescence devices.

The invention discloses an organic light emission diode and a preparation method thereof. The organic light emission diode comprises a substrate, an anode layer, an organic function layer and a cathode layer which are in stack combination in sequence. The organic function layer comprises a hole transfer layer, a light-emitting layer, an organometallic complex barrier layer, an n-dopant-doped organometallic complex barrier layer and an electron transfer layer which are in stack combination in sequence. A preparation method comprises the steps of providing the substrate, preparing the anode layer, preparing the organic function layer comprising the n-dopant-doped barrier layer, and preparing the cathode layer and the like. The organic light emission diode has excellent use stability, long service life, and excellent luminous efficiency; the process is simple and easy to control the condition; the qualified rate of the finished product is high; the production efficiency is improved effectively; the production cost is reduced; and the organic light emission diode and the preparation method are suitable for industrialized production.