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QLED device, display device and preparation method of display device

A device and interface modification technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of short service life, unbalanced carrier injection, low power efficiency, etc., and achieve less transmission loss, The effect of improving the overall efficiency and reducing the driving voltage

Inactive Publication Date: 2018-11-02
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a QLED device, a display device and a preparation method thereof, aiming at solving the problems of unbalanced carrier injection, low power efficiency and short service life in existing QLED devices

Method used

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  • QLED device, display device and preparation method of display device
  • QLED device, display device and preparation method of display device

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Embodiment 1

[0034] A QLED device, comprising a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron transport layer 5 and a top electrode 6 arranged in sequence, and also includes a 5wt% doped by PEDOT:PSS:PFI Hole injection layer 7 made of DMSO. Wherein, the substrate 1 is a glass substrate; the material of the bottom electrode 2 is ITO, and the thickness is 120nm; the thickness of the hole injection layer 7 is 40nm, and the weight ratio of PEDOT:PSS:PFI is 1:2.5:11.2; the hole transport layer The material of 3 is TFB with a thickness of 25nm; the material of quantum dot light-emitting layer 4 is CdSe / ZnS QDs with a thickness of 40nm; the material of electron transport layer 5 is nano-zinc oxide with a thickness of 20nm; the material of top electrode 6 is Al.

[0035] In the embodiment of the present invention, PEDOT:PSS:PFI is doped with 5wt% DMSO, so that the work function of the hole injection layer 7 is improved from 4.7eV com...

Embodiment 2

[0037]A QLED device, comprising a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot luminescent layer 4, an electron transport layer 5 and a top electrode 6 arranged in sequence, also includes a PEDOT:PSS film doped with a thickness of 40nm A hole injection layer 7 made of 0.1 wt% multi-walled carbon nanotubes. Among them, the substrate 1 is a glass substrate; the material of the bottom electrode 2 is ITO with a thickness of 120nm; the material of the hole transport layer 3 is TFB with a thickness of 25nm; the material of the quantum dot light-emitting layer 4 is CdSe / ZnS QDs with a thickness of 40nm; the material of the electron transport layer 5 is nano zinc oxide with a thickness of 20nm; the material of the top electrode 6 is Al.

[0038] In this embodiment, by doping 0.1wt% multi-walled carbon nanotubes through the PEDOT:PSS thin film, the electrical conductivity of the hole injection layer 7 is improved compared to the electrical conductivity of ...

Embodiment 3

[0040] A QLED device, comprising a substrate 1, a bottom electrode 2, a hole transport layer 3, a quantum dot luminescent layer 4, an electron transport layer 5 and a top electrode 6 arranged in sequence, also includes a PEDOT:PSS film doped with a thickness of 40nm A hole injection layer 7 made of 6 wt% liquid bromine. Among them, the substrate 1 is a glass substrate; the material of the bottom electrode 2 is ITO with a thickness of 120nm; the material of the hole transport layer 3 is TFB with a thickness of 25nm; the material of the quantum dot light-emitting layer 4 is CdSe / ZnS QDs with a thickness of 40nm; the material of the electron transport layer 5 is nano zinc oxide with a thickness of 20nm; the material of the top electrode 6 is Al.

[0041] In this embodiment, the PEDOT:PSS thin film is doped with 6wt% liquid bromine, so that the electrical conductivity of the hole injection layer 7 is increased by 300 times compared to the electrical conductivity of the hole inject...

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Abstract

The invention belongs to the technical field of display application and provides a QLED device, a display device and a preparation method of the display device. The QLED device comprises a substrate,a bottom electrode, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, a top electrode and a hole injection layer, wherein the substrate, the bottom electrode, the hole transport layer, the quantum dot light-emitting layer, the electron transport layer and the top electrode are sequentially arranged; the hole injection layer is prepared through doping a hole injection material and an interface-modified material; and the interface-modified material is a p-type conductive material. According to the QLED device, the hole injection layer is prepared through doping the hole injection material and the interface-modified material, so that the hole transport capacity and the ionization energy are improved and the hole injection barrier is reduced, thereby effectively improving the electric conductivity, reducing driving voltage, improving injection balance of charge carriers, simultaneously reducing charges of the device, improving the power efficiency ofthe device and prolonging the service life of the device.

Description

technical field [0001] The invention belongs to the field of display application technology, and in particular relates to a QLED device, a display device and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diode (QLED) has the advantages of high color purity, thinness and flexibility, and can be prepared by solution method. It is a next-generation display technology with high expectations. [0003] At present, QLED devices generally use quantum dots as light-emitting materials. At the same time, in order to improve the charge mobility of QLED devices, PEDOT (polymer of 3,4-ethylenedioxythiophene monomer): PSS (sodium polystyrene sulfonate) is usually used. as a hole-injecting material. However, due to the high ionization energy of the quantum dot material and the low work function of the ITO anode modified by PEDOT:PSS, effective hole injection cannot be formed, and the hole mobility of the quantum dot itself is lower than the electron...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/17H10K71/00
Inventor 钱磊杨一行曹蔚然向超宇陈崧
Owner TCL CORPORATION
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