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NiO composite film, quantum dot light-emitting device and the preparation and application of the same

A technology of quantum dot light emitting and composite material thin film, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of short life of quantum dot light emitting devices, improve performance and stability, improve hole injection ability, accelerate The effect of migration speed

Active Publication Date: 2017-10-10
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of the prior art, the object of the present invention is to overcome the deficiencies in the prior art, provide a NiO composite thin film, quantum dot light-emitting device and its preparation and application, adopt M:NiO / NiO composite thin film structure, both can solve Hole injection problem, improve the carrier injection balance in the device, and then improve the performance and stability of the device, and solve the problem of short life of the existing quantum dot light-emitting devices

Method used

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  • NiO composite film, quantum dot light-emitting device and the preparation and application of the same
  • NiO composite film, quantum dot light-emitting device and the preparation and application of the same

Examples

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Embodiment 1

[0033] In the present embodiment, a kind of preparation method of Cu:NiO / NiO composite film comprises the following steps:

[0034] a. Mix 0.97mmol of nickel acetate tetrahydrate and 0.03mmol of copper acetate monohydrate and dissolve them in 10ml of absolute ethanol, add 60.4μl of ethanolamine dropwise while stirring as a stabilizer, stir at 70°C for 4h, and then Stir at room temperature for 8h to obtain Cu:NiO solution for subsequent use;

[0035] b. Dissolve 1 mmol of nickel acetate tetrahydrate in 10 ml of absolute ethanol, add dropwise 60.4 μl of ethanolamine as a stabilizer while stirring, stir at 70°C for 4 hours, and then stir at room temperature for 8 hours to obtain a NiO solution for later use;

[0036] c. draw the Cu:NiO solution prepared in the step a of 120 μl on the ITO substrate with a pipette gun, spin-coat 50s with a speed of 4000rpm, prepare Cu:NiO coating liquid film on the ITO substrate, The Cu:NiO coating liquid film was dried and solidified at 400°C in ...

Embodiment 2

[0040] This embodiment is basically the same as Embodiment 1, especially in that:

[0041] In the present embodiment, a kind of preparation method of Li:NiO / NiO composite film comprises the following steps:

[0042] a. Mix 0.97mmol of nickel acetate tetrahydrate and 0.03mmol of lithium chloride and dissolve in 10ml of absolute ethanol, add dropwise 60.4μl of ethanolamine as a stabilizer while stirring, stir at 70°C for 4h, then at room temperature Stir 8h, obtain Li:NiO solution, standby;

[0043] b. This step is the same as in Embodiment 1;

[0044] c. draw the Li:NiO solution prepared in the step a of 120 μl on the ITO substrate with a pipette gun, spin-coat 50s with a speed of 4000rpm, prepare Li:NiO coating liquid film on the ITO substrate, Dry and solidify the Li:NiO coated liquid film in air at 400°C, and then perform an annealing treatment for 20 minutes to obtain a Li:NiO cured film. After the Li:NiO cured film is cooled to room temperature, O 3 -Plasma treatment fo...

Embodiment 3

[0048] This embodiment is basically the same as the previous embodiment, and the special features are:

[0049] In the present embodiment, a kind of preparation method of Mg:NiO / NiO composite thin film comprises the following steps:

[0050] a. Mix 0.97mmol of nickel acetate tetrahydrate and 0.03mmol of magnesium acetate tetrahydrate and dissolve in 10ml of absolute ethanol, add dropwise 60.4μl of ethanolamine as a stabilizer while stirring, stir at 70°C for 4h, and then Stir at room temperature for 8h to obtain Mg:NiO solution for subsequent use;

[0051] b. This step is the same as in Embodiment 1;

[0052] c. draw the Mg:NiO solution prepared in the step a of 120 μl on the ITO substrate with a pipette gun, spin-coat 60s with a speed of 4000rpm, prepare Mg:NiO coating liquid film on the ITO substrate, The Mg:NiO coating liquid film was dried and solidified at 400°C in air, and then annealed for 20 minutes to obtain a Mg:NiO cured film. After the Mg:NiO cured film was coole...

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Abstract

The invention discloses a NiO composite film and a quantum dot light-emitting device and the preparation and application thereof, which utilizes an M: NiO / NiO composite film structure, an M: NiO film layer of NiO doped by M metal and an M: NiO / NiO structure formed composite material film with NiO composition gradient composed by the NiO film layer, wherein M metal can be any metal of Li, Mg and Cu or an alloy. The M mole ratio in the M metal doped NiO film layer ranges between 1-5 mol %. The invention can not only solve the problem of hole injection, but also improves the balance of carrier injection in the device with the result being the improvement in the performance and stability of the device and the solution to the problem of short life of the existing quantum dot light-emitting device. In addition to the cathode using vacuum evaporation, all the function layers, including the inorganic hole composite layer, use the solution spin coating method for the film preparation. The materials can be obtained easily, the method is simple and the cost is low.

Description

technical field [0001] The invention relates to a compound hole injection layer, a light-emitting device and its preparation and application, in particular to a NiO compound hole injection layer, a quantum dot light-emitting device and its preparation and application, which are applied in the technical field of manufacturing new display devices. Background technique [0002] Quantum dot light-emitting diode (QLED) has the advantages of narrow emission half-peak width, adjustable color, high luminous quantum efficiency and long luminous lifetime, and has become a hot field for the next generation of new LED displays with broad development prospects. [0003] The current typical QLED device structure is a sandwich structure, that is, the quantum dot light-emitting layer is sandwiched between the hole transport layer and the electron transport layer. The transport layer can be composed of small organic molecules or polymers, or inorganic metal oxides. Whether the injection of ...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/14H01L33/26
CPCH01L33/005H01L33/06H01L33/14H01L33/145H01L33/26
Inventor 杨绪勇曹璠
Owner SHANGHAI UNIV
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