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Quantum dot light emitting diode containing doped hole injection layer and fabrication method of quantum dot light emitting diode

A hole injection layer, quantum dot light-emitting technology, used in organic semiconductor devices, semiconductor/solid-state device manufacturing, electrical components and other directions, can solve the problems of easily corroded electrodes, high ionization potential, affecting the long-term stability of QLED, etc. The effect of injection efficiency, simplifying the preparation process, and improving long-term stability

Inactive Publication Date: 2015-12-16
TCL CORPORATION
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Problems solved by technology

[0007] The purpose of the present invention is to provide a quantum dot light-emitting diode containing a doped hole injection layer, aiming to solve the problem that existing hole injection materials cannot form effective hole injection due to high ionization potential, and are easy to corrode electrodes, Issues affecting the long-term stability of QLEDs

Method used

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  • Quantum dot light emitting diode containing doped hole injection layer and fabrication method of quantum dot light emitting diode
  • Quantum dot light emitting diode containing doped hole injection layer and fabrication method of quantum dot light emitting diode
  • Quantum dot light emitting diode containing doped hole injection layer and fabrication method of quantum dot light emitting diode

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[0024] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] as attached image 3 As shown, the embodiment of the present invention provides a quantum dot light-emitting diode containing a doped hole injection layer. The quantum dot light-emitting diode includes a substrate 1, an anode layer 2, a doped hole injection Layer 3, hole transport layer 4, quantum dot light-emitting layer 5, electron transport layer 6 and cathode layer 7, wherein the doped hole injection layer 3 is made of P-doped Poly-TPD, and the The dopant in P-doped Poly-TPD is F4-TCNQ.

[0026] In the embodiment of the present invention, the F4-TCNQ i...

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Abstract

The invention is applicable for the field of a light emitting diode, and provides a quantum dot light emitting diode containing a doped hole injection layer and a fabrication method of the quantum dot light emitting diode. The quantum dot light emitting diode comprises a substrate, an anode layer, the doped hole injection layer, a hole transfer layer, a quantum dot light emitting layer, an electron transfer layer and a cathode layer which are sequentially arranged in a lamination way, the doped hole injection layer is made of P-doped Poly-TPD, and a doping agent in the P-doped Poly-TPD is F4-TCNQ.

Description

technical field [0001] The invention belongs to the field of light emitting diodes, in particular to a quantum dot light emitting diode containing a doped hole injection layer and a preparation method thereof. Background technique [0002] Light-emitting diodes (LEDs) have received more and more attention due to their low energy consumption, low heat production, and long life in the contemporary era with strong awareness of environmental protection and energy conservation. They are gradually replacing traditional lighting technologies and becoming a new generation of lighting sources. . At present, phosphor luminescent materials have been widely used in LED lighting and display, but they are still limited by the disadvantages of large light attenuation, poor particle uniformity, and short service life. Organic Light Emitting Diode (OLED) is the research hotspot of the new generation of LED, but there are unavoidable problems in packaging technology and service life. Due to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/12H10K50/155H10K50/17H10K2102/331
Inventor 陈亚文付东
Owner TCL CORPORATION
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