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Short-circuit-preventing top-emission OLED device and manufacturing method thereof

A top-emission, anti-short-circuit technology, applied in the field of microelectronics, can solve the problems of increasing process complexity, large roughness, tip discharge, etc., and achieve the effect of saving raw material costs, loose selection, and good electrical conductivity.

Active Publication Date: 2015-12-02
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor wetting of silver to the glass substrate, the roughness is too large when it is evaporated on the glass substrate as an anode material
The device is prone to tip discharge during operation, resulting in a short circuit
In the preparation of OLED devices, silicon dioxide is usually sputtered as a buffer layer on the glass substrate, which undoubtedly increases the complexity of the process

Method used

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  • Short-circuit-preventing top-emission OLED device and manufacturing method thereof
  • Short-circuit-preventing top-emission OLED device and manufacturing method thereof
  • Short-circuit-preventing top-emission OLED device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Example 1: Preparation of a short-circuit-proof top-emitting OLED device.

[0058] The description of the experimental materials and instruments is as follows:

[0059] Use a conventional vacuum thermal evaporator (background vacuum reading below 4×10 -6 Torr) was evaporated, and the whole device was prepared in the same chamber under uninterrupted vacuum conditions; the substrate was placed on the slot of a turntable driven by a gear motor to rotate at a constant speed (about 30RPM) to be inverted (evaporation source The evaporated materials are sequentially deposited on the bottom, the substrate on the top) to form the final device; the organic layer and the metal electrode layer are evaporated by replacing the mask respectively; the film thickness is monitored by a quartz crystal oscillator (SI-TM606A); The ellipsometer (Alpha-SESpectroscopicEllipsometer) calibrates the actual evaporated film thickness.

[0060] The specific operation steps are as follows:

[0061...

Embodiment 2

[0071] Example 2: Preparation of a short-circuit-proof top-emitting OLED device.

[0072] The specific operation steps are as follows:

[0073] (1) Substrate pretreatment: ordinary optical glass (effective area of ​​0.09cm 2 , that is, 0.3cm×0.3cm) in acetone, absolute ethanol and deionized water for 5 minutes, followed by ultrasonic cleaning for 5 minutes, and drying at 110°C for 30 minutes;

[0074] (2) Evaporation of the aluminum layer in the anode: Cut a high-purity small aluminum block (about 5-6mm in diameter, purchased from alfa, with a purity of 99.999%) into small pieces of about 2-3mm square, and put them into the nitriding In the boron crucible, use tantalum skin to evaporate, adjust the current heating power, and control the evaporation rate to 0.3~0.5nm / s until the aluminum layer evaporated on the glass substrate reaches 60nm;

[0075] (3) Evaporation of the silver layer in the anode: use high-purity silver particles (about 1mm in diameter, purchased from alfa, ...

Embodiment 3

[0083] Example 3: Preparation of a short-circuit-proof top-emitting OLED device.

[0084] The specific operation steps are as follows:

[0085] (1) Substrate pretreatment: ordinary optical glass (effective area of ​​0.09cm 2 , namely 0.3cm×0.3cm) in acetone, absolute ethanol and deionized water for 20 minutes, followed by ultrasonic cleaning for 20 minutes, and drying at 150°C for 10 minutes;

[0086] (2) Evaporation of the aluminum layer in the anode: Cut a high-purity small aluminum block (about 5-6mm in diameter, purchased from alfa, with a purity of 99.999%) into small pieces of about 2-3mm square, and put them into the nitriding In the boron crucible, use tantalum skin to evaporate, adjust the current heating power, and control the evaporation rate to 0.3~0.5nm / s until the aluminum layer evaporated on the glass substrate reaches 50nm;

[0087] (3) Evaporation of the silver layer in the anode: use high-purity silver particles (about 1mm in diameter, purchased from alfa, ...

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Abstract

The invention discloses a short-circuit-preventing top-emission OLED device and a manufacturing method thereof. Specifically, the OLED device comprises a substrate, a short-circuit-preventing reflective anode, a hole-injection layer, a hole-transporting layer, a light emitting layer, an electronic transmission layer also serving as a spacing layer, an electronic injection layer and a semi-transparent cathode. The manufacturing method comprises the following steps of (1) preprocessing the substrate; (2) performing vapor plating on an aluminum layer in the anode; (3) performing vapor plating on a silver layer in the anode; (4) performing vapor plating on the hole-injection layer; (5) performing vapor plating on the hole-transporting layer; (6) performing vapor plating on the light emitting layer; (7) performing vapor plating on the electronic transmission layer; (8) performing vapor plating on the electronic injection layer; (9) and performing vapor plating on the cathode. The device which adopts an aluminum / silver composite anode makes the high reflectivity characteristics of silver fully developed and meanwhile has the advantage of silver overcoming a device short circuit problem. The short-circuit problem of a pure silver anode is thoroughly solved. Meanwhile, the cathode thickness is optimized. Good conductive capabilities and relatively high light transmittance are further kept.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a short-circuit-proof top-emitting OLED device and a preparation method thereof. Background technique [0002] Organic light-emitting diode (Organic Light-Emitting Diode, OLED) is a new generation of light-emitting devices with great potential, and has very broad applications in flat-panel display technology and large-area lighting. It has the characteristics of self-illumination, full solid-state, wide viewing angle, fast response, low temperature resistance, low-voltage drive and flexible display, showing strong competitiveness and development potential. [0003] In display applications, active-matrix organic light-emitting diodes (AMOLEDs) are the main development trend, and their driving is controlled by thin-film transistors. If the traditional bottom emission method is used, when the light exits from the substrate, it must be blocked by the circuit met...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/171H10K50/16H10K50/81H10K2102/341H10K71/00
Inventor 钱敏廖良生王照奎史晓波马杰柳渊
Owner SUZHOU UNIV
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