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Inorganic perovskite quantum dot lighting diode tube and preparation method thereof

A quantum dot light-emitting and inorganic calcium technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high electron injection barrier and poor performance of quantum dot light-emitting diode devices, and achieve excellent photoelectric performance and reduce Auger Combination probability, effect of guaranteeing colloid performance

Active Publication Date: 2017-02-22
TCL CORPORATION
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Problems solved by technology

[0004] The object of the present invention is to provide a kind of inorganic perovskite quantum dot light-emitting diode and preparation method thereof, aim at solving the problem of using inorganic perovskite quantum dot (CsPbX 3 , X=Cl, Br, I) as the light-emitting material of quantum dot light-emitting diodes, the electron injection barrier is relatively high, resulting in the poor performance of quantum dot light-emitting diode devices obtained

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  • Inorganic perovskite quantum dot lighting diode tube and preparation method thereof

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[0013] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0014] to combine figure 1 , an embodiment of the present invention provides an inorganic perovskite quantum dot light-emitting diode, including an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light-emitting layer 4, an electron injection layer 5 and a cathode stacked in sequence 6. The quantum dot light-emitting layer 4 is made of halogen surface-modified inorganic titanium quantum dots, and the halogen surface-modified modified inorganic perovskite quantum dots are part of the organic matter on the surface of the inorganic perovskite quantum dots. A quantum ...

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Abstract

The invention provides an inorganic perovskite quantum dot lighting diode tube, comprising an anode, a hole injection layer, a hole transmission layer, a quantum dot lighting layer, an electronic injection layer and a cathode which are laminated in order; the quantum dot lighting layer is made of halogen surface modified inorganic perovskite quantum dot, and the halogen surface modified inorganic perovskite quantum dot is the quantum dot after a part of organic ligand at the surface of the inorganic perovskite quantum dot is replaced by halogen, wherein the ratio between the halogen and the inorganic perovskite quantum dot is 0.5-12.5 mmol / L: 1 mg.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an inorganic perovskite quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Organic Light-Emitting Diode (OLED) and Quantum-dot Light-Emitting Diode (QLED) are considered to be two development directions in the display field in the future. Compared with OLED, which is already in the application and promotion stage, QLED is still in the stage of technology research and development and maturity. The device design and working principle of quantum dot light-emitting diode devices are similar to organic light-emitting diode devices. Compared with general organic light-emitting diode devices, quantum dot light-emitting diode devices are display devices that use quantum dots instead of organic light-emitting materials as light-emitting layer materials. Organic light-emitting diodes have limitations in terms of stability and col...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/005H01L33/06H01L2933/0008
Inventor 刘政杨一行曹蔚然钱磊向超宇
Owner TCL CORPORATION
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