The invention provides an all-inorganic light-emitting device based on a
perovskite thin film and a preparation method thereof, and belongs to the technical field of
semiconductor light-emitting devices. The all-inorganic light-emitting device is composed of an ITO glass substrate, a ZnO
electron transmission layer, an inorganic
perovskite CsPbX3 thin film light-emitting layer, an NiO hole transmission layer and an Au and Al
anode electrode layer which are laminated in turn from the bottom to the top, wherein the ZnO
electron transmission layer is prepared on the ITO conductive film of the ITOglass substrate, the ITO conductive film acts as a
cathode electrode layer, and X is Cl, Br or I element. The surface of the
perovskite CsPbX3 thin film is flat without pinhole, and the grain size issmall and efficient
radiation composite
luminescence can be easily realized so that the
luminescence purity is high and the
luminescence range is adjustable by adjusting and controlling the
doping proportion of the
halogen atoms. The inorganic material ZnO / NiO of stable property is used as the
electron / hole transmission layer of the device so that the requirement of the
working environment of thedevice is ensured to be low and the performance is stable.