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45results about How to "Enhanced photoluminescence intensity" patented technology

Method for preparing TiO2 (titanium dioxide) nano-pillar array on surface of LED (light-emitting diode) epitaxial wafer

The invention discloses a method for preparing a TiO2 (titanium dioxide) nano-pillar array on a surface of an LED (light-emitting diode) epitaxial wafer. The method comprises the following steps: (1) preparing a GaN (gallium nitride) epitaxial wafer on a sapphire substrate; (2) evaporating a titanium layer on a surface of a P-type GaN layer of the epitaxial wafer, and carrying out calcination to transform titanium into TiO2 which is taken as a seeding layer; (3) adopting a hydrothermal method to prepare the TiO2 nano-pillar array, placing an HCl (hydrogen chloride) solution into an autoclave, stirring at a room temperature and adding tetrabutyl titanate to prepare a mixture solution; placing an epitaxial wafer with the TiO2 seedling layer into the mixture solution, leaning against a lining wall of the autoclave in a heeling condition, reacting for 1-24 hours at 120 DEG C-180 DEG C and cooling to the room temperature. The method is simple and practicable and has the advantages of low cost, high controllability, good homogenization and a periodical array is easy to form; in addition, the method can be utilized to improve the light-emitting efficiency of an LED, and the photoluminescence intensity of the LED can be improved by 7-8 times.
Owner:SHANDONG UNIV

Method for preparing OLED light-emitting device with metal-enhanced fluorescence outer conversion layer

Provided is a method for preparing an OLED light-emitting device with a metal-enhanced fluorescence outer conversion layer. The invention provides a preparing method for a metal-enhanced fluorescence layer and an OLED device based on the method. The preparing method for the metal-enhanced fluorescence light-emitting layer includes the following steps of firstly, preparing a nanometer metal particle layer, wherein the nanometer metal particle layer is obtained by forming a metal film through vacuum evaporation and then conducting thermal treatment; secondly, preparing an organic fluorescence material solution, and evenly mixing the fluorescence material in high-molecular polymers; thirdly, preparing the metal-enhanced fluorescence outer conversion layer. The structure is prepared on the outer side of glass of an OLED, surface plasmas are formed on light waves emitted by the OLED device and metal nanometer particles on the outer side of the glass through the structure, and therefore the luminous intensity of fluorescent molecules is enhanced through the strong partial enhancing characteristic of the surface plasmas, the photoluminescence of the metal-enhanced fluorescence outer conversion layer of the OLED device is greatly enhanced. The OLED device with the metal-enhanced fluorescence outer conversion layer is simple in preparation process, low in device requirement and short in preparation cycle.
Owner:SHANGHAI UNIV

Method for improving photoluminescence of nano anatase TiO#-[2]

The invention disclose a method for improving photoluminescence of nano anatase TiO#-[2] by employing an electron beam co-radiation method in the environment of atmospheric temperature and normal atmosphere, wherein methyl methacrylate is grafted on the nanocrystalline surface of the anatase titanium dioxide (Anatase. A-TiO2). The processed anatase TiO2 nano powder can be combined firmly with methyl methacrylate (MMA) through chemical bonds.
Owner:UNIV OF ELECTRONIC SCI & TECH OF CHINA

Hepatocarcinoma early diagnosis kit based on ZnO nano-bar array

The present invention provides a ZnO nanorod array detection kit which is used for early diagnosis of the liver cancer. The kit adopts anti-AFP protein, anti-AFP (alpha-fetoprotein) protein, anti-sugar protein 19-9 and anti-sugar protein 125; the kit consists of an improved ZnO nanorod array film which is coated by the four kinds of protein, a bottom plate, a micro field device (with an electrophoresis tank and a pair of electrodes) and buffer solution; the invention also relates to the utilizing and detecting method of the kit. The kit can be used for the diagnosis of benign and malignant primary liver cancer tumors, in particular for the detection of the early clinical primary liver cancer, and can be used for the chemotherapeutic monitoring and the prognostic evaluation after the operation on the liver cancer. The invention has the characteristics of high speed, sensitivity, accuracy, reliability, simple operation, and suitability for the primary health care units and the hospitals of various levels.
Owner:SICHUAN UNIV

Preparation method of quasi-two dimensional perovskite precursor solution

The invention discloses a preparation method of a quasi-two dimensional perovskite precursor solution. The preparation method comprises the following steps: step one, dissolving lead bromide (PbBr2) and methylammonium bromide (NABr) or formamidine ammonium bromide (FABr) according to the molar ratio of 1:(0.5-1) into a polar solvent to prepare and obtain a three-dimensional perovskite precursor solution; step three, dissolving phenethyl ammonium bromide (PEABr) into the polar solvent to prepare and obtain a ligand precursor solution; and step three, mixing the three-dimensional perovskite precursor solution with the ligand precursor solution to prepare and obtain the quasi-two dimensional perovskite precursor solution. The preparation method has the advantages that the preparation method is simple and easy to operate, the preparation time is short, the using amount of precursor materials is small, other materials do not need to be introduced and the preparation cost is low; the quantity of single-layer and double-layer perovskite is obviously reduced in a perovskite film prepared based on the precursor solution provided by the invention, and the photoluminescence intensity is obviously promoted; and the performance of a perovskite light-emitting diode prepared based on the precursor solution provided by the invention is obviously promoted.
Owner:NANJING UNIV OF POSTS & TELECOMM

Test system for improving photoluminescence test effect of semiconductor material

The invention relates to a test system for improving photoluminescence test effect of semiconductor material, which comprises a laser device, a spectral measurement system and light path components, wherein the light path components comprise a reflecting mirror, a lens and a paraboloidal mirror and constitute a test light path. A laser excited from the laser device turns a direction by the reflecting mirror and then directly irradiates the tested sample after being focused by the lens; and the laser reflected by the tested sample is collected by the paraboloidal mirror to turn the direction and be collimated, and then sent to the spectral measurement system in the form of broad beam. The laser device in the invention selects appropriate emission wavelength according to the characteristics of the semiconductor material, thereby obtaining high photoluminescence strength, enhancing the photoluminescence test capacity and improving the test sensitivity. In addition, the invention does not have limits and special requirements for the spectral measurement system, and thus, the realization mode is very flexible.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Method for raising radiation of silicone based crystal thin film by use of process of plasma

Specially, the invention is related to method for raising luminescence of silicon based crystal thin film by using process of plasma. The method includes steps: (1) preparing Er-Si-O sol according to certain ratio of chemical dose; (2) spin coating a layer of thin film of Er-Si-O dried gel xerogel on conventional processed silicon substrate; (3) high sintering to reach total thickness of thin film of Er-Si-O dried gel xerogel, and generating thin film of Er-Si-O crystal in situ; (4) processing thin film of silicon based Er-Si-O crystal by using N plasma produced by equipment of plasma enhanced chemical vapor deposition (PECVD); (5) two times of annealing thin film of Er-Si-O crystal processed by plasma in order to diffuse N element in thin film well, lower symmetry of crystal field around Er3+ ions, and raise intensity of photoluminescence.
Owner:INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI

Method for constructing high-stability perovskite quantum dot illuminant through in-situ polymerization

The invention discloses a method for constructing a high-stability perovskite quantum dot illuminant through in-situ polymerization, which comprises the steps of preparing a perovskite quantum dot stock solution by using a thermal injection method, and polymerizing quantum dots to prepare a photoluminescence block by using a high-molecular polymerization method, so that the stability of the quantum dots in air and water can be effectively improved, and the photoluminescence property of the prepared luminescent block is almost not reduced after the prepared luminescent block is stored in air for several months. Meanwhile, the perovskite quantum dots with different colors prepared from different raw materials can be effectively polymerized with polymer monomers in situ, so that the photoluminescence block with almost the whole visible light range from purple to near infrared is obtained.
Owner:NANJING UNIV OF SCI & TECH

Preparing Er-doped alumina optical waveguide film by Er ion injected boehmite method

In the field of optoelectronic materials and devices, a method for preparing erbium-doped alumina optical waveguide thin films by implanting erbium ions into boehmite, characterized by in-situ synthesis of erbium-doped Al by sol-gel and ion implantation composite processes 2 o 3 Optical waveguide film, by pulling method or spinning method on SiO 2 / Si substrate is coated with γ-AlOOH xerogel film, then erbium ions are injected into the γ-AlOOH xerogel film, and erbium-doped Al is synthesized in situ by high temperature sintering 2 o 3 Optical waveguide film, process: on SiO 2 / Si substrate coated with γ-AlOOH xerogel film; erbium ions implanted into the γ-AlOOH xerogel film; repeating the first and second steps to obtain the final total thickness and total implantation of the γ-AlOOH xerogel film doped with erbium ions Erbium ion dosage; sinter the γ-AlOOH xerogel film doped with erbium ions at 600-1000°C, pass 2Er+2γ-AlOOH→(Al, Er) 2 o 3 +H 2 The chemical and physical recombination process of O to prepare erbium-doped Al 2 o 3 Optical waveguide film. Advantages: Compared with the prior art, this type of thin film has high erbium ion distribution uniformity and dispersion, and the photoluminescence intensity is increased by 3 to 6 times.
Owner:DALIAN UNIV OF TECH

GaN-based light-emitting diode epitaxial wafer and manufacturing method thereof

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a production method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprisesa substrate, a low-temperature buffer layer, a three-dimensional nucleating layer, a two-dimensional restoration layer, a gallium nitride-free layer, an N-type semiconductor layer, an active layer anda P-type semiconductor layer, wherein the low-temperature buffer layer, the three-dimensional nucleating layer and the two-dimensional restoration layer are sequentially stacked to the substrate, a first surface of the gallium nitride-free layer is paved on the two-dimensional restoration layer, and a plurality of pits are formed in a second surface of the gallium nitride-free layer, are respectively of an inverse cone shape and are distributed in the second surface of the gallium nitride-free layer at intervals; and the first surface of the N-type semiconductor layer is paved in the multiplepits and the second surface of the gallium nitride-free layer, a second surface of the N-type semiconductor layer is a plane, the active layer and the P-type semiconductor layer are sequentially stacked on the second surface of the N-type semiconductor layer, and the second surface is opposite to the first surface. According to the gallium nitride-based light-emitting diode epitaxial wafer, the light-emitting efficiency of an LED can be improved.
Owner:HC SEMITEK ZHEJIANG CO LTD
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