The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a production method thereof, belonging to the technical field of semiconductors. The epitaxial wafer comprisesa substrate, a low-temperature buffer layer, a three-dimensional nucleating layer, a two-dimensional restoration layer, a gallium nitride-free layer, an N-type semiconductor layer, an active layer anda P-type semiconductor layer, wherein the low-temperature buffer layer, the three-dimensional nucleating layer and the two-dimensional restoration layer are sequentially stacked to the substrate, a first surface of the gallium nitride-free layer is paved on the two-dimensional restoration layer, and a plurality of pits are formed in a second surface of the gallium nitride-free layer, are respectively of an inverse cone shape and are distributed in the second surface of the gallium nitride-free layer at intervals; and the first surface of the N-type semiconductor layer is paved in the multiplepits and the second surface of the gallium nitride-free layer, a second surface of the N-type semiconductor layer is a plane, the active layer and the P-type semiconductor layer are sequentially stacked on the second surface of the N-type semiconductor layer, and the second surface is opposite to the first surface. According to the gallium nitride-based light-emitting diode epitaxial wafer, the light-emitting efficiency of an LED can be improved.