Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing near-infrared light-emitting ZnO film doped with lithium and erbium

A near-infrared and thin-film technology, applied in the direction of luminescent materials, chemical instruments and methods, etc., can solve the problems of near-infrared luminescent ZnO thin film preparation and very little research on photoelectric properties, and achieve good surface morphology, high crystal quality, and low cost Effect

Inactive Publication Date: 2006-07-12
ZHEJIANG UNIV
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are very few studies on the preparation and optoelectronic properties of near-infrared luminescent ZnO thin films.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing near-infrared light-emitting ZnO film doped with lithium and erbium
  • Method for preparing near-infrared light-emitting ZnO film doped with lithium and erbium
  • Method for preparing near-infrared light-emitting ZnO film doped with lithium and erbium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1) Take 25.0g (0.307mol) of ZnO powder with a purity of 99.99%, 1.5480g (0.00808mol) of Er with a purity of 99.99% 2 o 3 powder and 0.2994 g (0.00808 mol) of Li with a purity of 99.9% 2 CO 3 Powder, mixed with alcohol in a milling jar and milled with agate balls for 24 hours. After drying, put it into a silicon carbide rod furnace and pre-fire it at 800°C for 1 hour, and then put it into a ceramic mortar and grind it with a binder for 1 hour. Then put it into a mold and press it into a disc with a diameter of about 5 cm and a thickness of about 2 mm. Put the wafer into a silicon carbide rod furnace and sinter at 1200°C for 2 hours to make a ceramic target.

[0020] 2) Put the ceramic target prepared above into the growth chamber of the pulsed laser deposition device, adjust the growth parameters as follows: laser energy 336mJ, frequency 3Hz, distance between target and Si(111) substrate 4.5cm, oxygen pressure 1Pa, The substrate was heated to 750° C. and the growth ...

Embodiment 2

[0024] 1) Take 25.0g (0.307mol) of ZnO powder with a purity of 99.99%, 0.587g (0.00310mol) of Er with a purity of 99.99% 2 o 3 powder and 0.114 g (0.00310 mol) of Li with a purity of 99.9% 2 CO 3 Powder, mixed with alcohol in a ball mill jar and milled with agate balls for 24 hours. After drying, put it into a silicon carbide rod furnace and pre-fire it at 900°C for 1 hour, and then put it into a ceramic mortar and grind it with a binder for 1 hour. Then put it into a mold and press it into a disc with a diameter of about 5 cm and a thickness of about 2 mm. Put the wafer into a silicon carbide rod furnace and sinter at 1500°C for 2 hours to make a ceramic target.

[0025] 2) Put the ceramic target prepared above into the growth chamber of the pulsed laser deposition device, adjust the growth parameters as follows: laser energy 336mJ, frequency 3Hz, target and SiO 2 / Si substrate distance 4.5cm, oxygen pressure 0.1Pa, substrate heating to 550°C, growth time 45min, to obtai...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for using lithium erbium codoping to prepare for near-infrared luminous ZnO thin film, which comprises the following steps: 1) ball abrading mixing the ZnO, Er2O3 and Li2CO3 powder with the mole rate 95-98:1-2.5:1-2.5, pre-firing them on the silicon carbide rod oven at the temperature of 700-900 deg., adding adhesive to do milling extrusion molding and firing to obtain the ceramic material; 2) arranging the ceramic material in the generating room of the pulsed laser deposit appliance to generate the ZnO thin film with erbium; 3) annealing the ZnO thin film with erbium in the oxygen atmosphere at the temperature of 700-1500 deg.

Description

technical field [0001] The invention relates to a method for preparing a near-infrared luminescent ZnO film, in particular to a method for preparing a near-infrared luminescent ZnO film by co-doping lithium and erbium. Background technique [0002] Erbium-doped ZnO thin film can emit near-infrared luminescence of about 1.5 μm, which corresponds to the wavelength band with the smallest transmission loss of silica fiber, and has great application prospects in the field of optical communication, so it has attracted much attention. However, due to the very small solid solubility of Er in ZnO, it is difficult to obtain strong luminescence at 1.5 μm. French scientist Rafael Pérez-Casero and others used pulsed laser deposition technology to prepare ZnO:Er thin films of different components in 2005, and studied the relationship between the photoluminescence intensity of 1.5 μm and Er content, and found that when the Er content was 2at%. When the film has the strongest luminous inte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K11/78
Inventor 朱丽萍顾修全叶志镇赵炳辉
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com