736 results about "Charge injection" patented technology

A semiconductor memory cell includes a floating body region configured to be charged to a level indicative of a state of the memory cell; a first region in electrical contact with said floating body region; a second region in electrical contact with said floating body region and spaced apart from said first region; a gate positioned between said first and second regions; and a back-bias region configured to inject charge into or extract charge out of said floating body region to maintain said state of the memory cell. Application of back bias to the back bias region offsets charge leakage out of the floating body and performs a holding operation on the cell. The cell may be a multi-level cell. Arrays of memory cells are disclosed for making a memory device.

The invention is to provide an organic EL device having a long life time that can reduce the driving voltage of the organic EL device, and to provide a material having a small ionization potential and exhibiting a large hole mobility by using as a layer or a zone. The organic electroluminescence device comprises a pair of electrodes and an organic light emitting layer sandwiched in the electrodes, characterized in that a hole transporting zone provided between the electrodes comprises the phenylenediamine derivative represented by the specific structural formulae, and the phenylenediamine derivative has a hole mobility of 10−4 cm2 / V·s or more upon using as a layer or a zone, with the organic light emitting layer containing a charge injection auxiliary.

Method and apparatus on charges injection using piezo-ballistic-charges injection mechanism are provided for nonvolatile memory device. The device has a strain source, an injection filter, a tunneling gate, a ballistic gate, a charge storage region, a source, and a drain with a channel defined between the source and drain. The strain source permits piezo-effect in ballistic charges transport to enable the piezo-ballistic-charges injection mechanism. The injection filter permits transporting of charge carriers of one polarity type from the tunneling gate through the blocking material and the ballistic gate to the charge storage region while blocking the transport of charge carriers of an opposite polarity from the ballistic gate to the tunneling gate. The present invention further provides an energy band engineering method permitting the memory device be operated without suffering from disturbs, from dielectric breakdown, from impact ionization, and from undesirable RC effects.

A charge pump circuit capable of preventing coupling and charge injection without increasing a layout area and power consumption is provided. The charge pump circuit includes a pull-up current source, a pull-down current source, a first switching device, and a second switching device. The pull-up current source sources pump-up current to the output node. The pull-down current source includes a current mirror and sinks pump-down current from the output node. In particular, the first switching device is connected between a supply voltage node and the pull-up current source and is switched in response to a pump-up control signal. The second switching device is connected between the second current source and a ground voltage node and is switched in response to a pump-down control signal. The current pump circuit may further include a first dummy capacitor one end of which is connected to a junction between the first switching device and the first current source and a second dummy capacitor one end of which is connected to a junction between the second switching device and the second current source.

In a nonvolatile memory cell having a trap layer, programming or erasing is made in a sequence of first charge injection with a given wait time being secured and second charge injection executed after the first charge injection. Surrounding charge that deteriorates the data retention characteristic is reduced by use of initial variation occurring immediately after programming (charge loss phenomenon due to binding of injected charge with the surrounding charge in an extremely short time), and then the charge loss due to the initial variation is compensated, to thereby improve the data retention characteristic.

A tunneling charge injector includes a conducting injector electrode, a grid insulator disposed adjacent the conducting injector electrode, a grid electrode disposed adjacent said grid insulator, a retention insulator disposed adjacent said grid electrode, and a floating gate electrode disposed adjacent said retention insulator. In the tunneling charge injector, charge is injected from the conducting injector electrode onto the floating gate. Electrons are injected onto the floating gate when the conducting injector electrode is negatively biased with respect to the grid electrode, and holes are injected onto the floating gate when the conducting injector electrode is positively biased with respect to the grid electrode. The tunneling charge injector is employed in a nonvolatile memory cell having a nonvolatile memory element with a floating gate such as a floating gate MOS transistor. In the nonvolatile memory cell, the floating gate of the tunneling charge injector is coupled to or forms a part of the floating gate of the nonvolatile memory element. The tunneling charge injector is employed to inject charge onto the floating gate of the nonvolatile memory element. A memory device includes an array of nonvolatile memory cells wherein each of the memory cells comprises a nonvolatile memory element with a floating gate such as a floating gate MOS transistor and a tunneling charge injector having a floating gate that is either coupled to the floating gate of the nonvolatile memory element or forms a portion of the floating gate of the nonvolatile memory element.

The present invention is a micro-machined electrode for neural-electronic interfaces which can achieve a ten times lower impedance and higher charge injection limit for a given material and planar area.