106results about How to "Small increase in lifetime of device" patented technology

Methods of managing memory devices, and devices so managed. A value of a parameter, that is used to program one or more memory cells, is adapted to a monitored condition of the cell(s). Either the number of bits per cell is held fixed or the monitored condition is an intrinsic condition of the cell(s). The initial value of the parameter is optimized for those specific cells, relative to a pre-selected criterion, by programming the cell(s) in accordance with candidate values of the parameter.

A nitride semiconductor device includes an n-type semiconductor layer, p-type semiconductor layer and an active layer of a quantum well structure that is sandwiched between said p-type and n-type nitride semiconductor layer, wherein the active layer has a first barrier layer, a second barrier layer and a third barrier layer. The first barrier layer is nearest to the p-type nitride semiconductor layer among the first, second and third barrier layers. The second barrier layer is nearest to the n-type nitride semiconductor layer among the first, second and third barrier layers. The third barrier layer is between the first and second barrier layers, and includes an upper barrier layer that contacts with a p-side surface of the well layer and a lower barrier layer that contacts with an n-side surface of said well layer. The upper and lower barrier layers having different composition or impurity concentrations.

A Thin Layer Inorganic Light Emitting device is disclosed comprising a substrate, a first electrode, a coated layer comprising substantially undoped zinc sulfide nanoparticles, and a second electrode. On applying a voltage between the two electrodes the device emits light with an emission maximum of electroluminescence at a wavelength above 450 nm.

Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift.

In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

Since the conventional electron transporters have low thermal stability, the organic electroluminescent devices using them are not sufficient in terms of the compatibility of their luminance and luminous efficiency with device lifetime.A 1,3,5-triazine derivative of formula (1) is obtained by a metal catalyst-aided coupling reaction of a compound of formula (2) with a compound of formula (3), and this is used as a composing component of an organic electroluminescent device.[In the formulae, Ar1 and Ar2 represent phenyl group or the like, R1 and R2 represent hydrogen atom or the like, R3 represents methyl or the like, m is an integer of 0 to 2, X represents 2,4-pyridylene or the like, p is 1 or 2, a and b are 1 or 2, a+b is 3, q is 0 or an integer of p or less, M represents —MgR4 group or the like, R4 represents chlorine atom or the like, r is p-q, and Y represents a leaving group.]

An axially-movable rotary switch includes a casing, a fixing base, a substrate and a knob. The fixing base is fixed in the hollow casing. The substrate is fixed below the fixing base. The knob is pivotally disposed on the upper end of the hollow casing. The switching rod of the knob eccentrically penetrates a positioning hole of the fixing base. The elastic piece is disposed at the distal end of the switching rod and is brought into contact with the electrical contacts of the substrate. With the elastic piece of the switching rod being arranged to correspond to the electrical contacts of the substrate, a user can switch the states between a closed circuit and an open circuit by axially drawing / pressing the knob. Further, the contact between the elastic piece and the electrical contacts will not generate unnecessary frictional interference, so that the lifetime of the device can be extended.