The purpose of the invention is to improve reliability of a light emitting apparatus including a TFT and organic light emitting elements. The light emitting apparatus according to the invention having a
thin film transistor and a light emitting element includes a first inorganic
insulation layer on the lower surface of a
semiconductor layer, a second inorganic
insulation layer on the upper surface of a gate
electrode, a first organic
insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, a wiring layer extending on the third inorganic insulation layer, a second organic insulation layer overlapped with the end of the wiring layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the wiring layer, a
cathode layer formed in contact with the wiring layer and having side end overlapped with the fourth inorganic insulation layer, and an
organic compound layer formed in contact with the
cathode layer and the fourth inorganic insulation layer and including light emitting material, and an
anode layer formed in contact with the
organic compound layer including the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with
silicon nitride or aluminum
nitride.