32results about How to "Lower hole injection barrier" patented technology

A kind of solution method prepares the method for the low voltage driving organic light-emitting diode (OLED) of p-i-n structure, and this OLED device is made of transparent ITO glass substrate, p-type doped transmission layer, light-emitting layer, n-type doped transmission Layer, electron buffer layer and metal back electrode stacked composition. The invention introduces the composite material PTAA:AgNWs into the OLED device, which can effectively improve the transport performance of the hole transport layer and reduce the hole injection barrier, thereby reducing the driving voltage of the device; PEI:SnS is prepared by a solution method 2 ‑QDs serve as the electron transport layer of OLED devices, which further improves the electron injection and transport capabilities in the device. Finally, while reducing the device driving voltage, the luminous efficiency of the OLED device is effectively improved.

The invention relates to the field of display technology, and discloses an organic electroluminescent device and an organic electroluminescent device. The organic electroluminescent device includes a stacked first electrode layer, a carrier functional layer, a light emitting layer and a second electrode layer. In the electrode layer, at least one layer of the carrier functional layer close to the light emitting layer is doped with the material in the light emitting layer. The arrangement of the carrier functional layer helps to improve the mobility of the carriers, and the higher mobility of the carriers can effectively reduce the turn-on voltage of the device and improve the power efficiency of the device. Doping materials in the light-emitting layer in at least one carrier functional layer close to the light-emitting layer, thereby effectively improving the matching degree between the energy level of the light-emitting layer and the energy level of the carrier functional layer close to it, The energy level difference between the two is reduced, and the carrier injection potential barrier is reduced, thereby effectively reducing the turn-on voltage of the organic electroluminescent device.

The invention discloses an organic electroluminescent display device, which comprises a glass substrate and an ITO conductive layer arranged on the upper surface of the glass substrate, wherein an anode interface modification layer, a hole transport layer, an electron transport layer, a luminescent layer, a metal cathode Mg layer and a metal cathode Al layer are sequentially arranged on the ITO conductive layer, and the anode interface modification layer is ZnO-doping PEDOT: PSS. The device takes the ZnO-doping PEDOT: PSS as the anode interface modification layer so as to reduce the hole injection barrier of a PEDOT: PSS layer and an ITO interface and improve the composite efficiency of holes and electrons, and meanwhile, the ZnO-doping PEDOT: PSS is also taken as a light scattering layer,so that crystal scattering can increase the luminous flux of the PEDOT: PSS layer, reduces the possibility that total-internal emission occurs among organic layers of a luminescent device, and improves the luminescent efficiency and brightness of organic OLED.

The invention provides a quantum dot light-emitting diode, comprising an anode and a cathode arranged oppositely, a quantum dot light-emitting layer arranged between the anode and the cathode, and a quantum dot light-emitting layer arranged between the anode and the quantum dot light-emitting layer A hole functional stack between the hole functional stacks, which includes a hole injection layer, a hole transport layer arranged on the hole injection layer, and a hole transport layer arranged on the hole injection layer and the hole An interface layer between transport layers, wherein the hole injection layer is disposed adjacent to the anode, and the material of the hole injection layer contains transition metal oxide; the hole transport layer is adjacent to the quantum dot light-emitting layer set, and the material of the hole transport layer contains an organic hole transport material; the material of the interface layer is a graphene material.

The invention discloses a low-roll-off quasi-two-dimensional perovskite light-emitting diode and a preparation method thereof. A cathode, a hole transport layer, an interface modification layer between the hole transport layer and the light-emitting layer, and a perovskite light-emitting diode are sequentially arranged from bottom to top. Layer, light-emitting layer and electron transport interface modification layer, electron transport layer, electron injection layer, anode. The present invention not only reduces the hole injection barrier between the hole layer and the light-emitting layer by modifying the interface between the hole transport layer and the perovskite light-emitting layer, but also improves the hole injection efficiency, and can block the impact of the hole layer on the perovskite. The quenching of the mineral layer improves the luminous efficiency of the perovskite layer. The invention also modifies the interface between the perovskite light-emitting layer and the electron transport layer, which can not only passivate the defect states on the surface of the perovskite, but also improve the film quality of the light-emitting layer and inhibit non-radiative recombination, thereby further improving the luminous efficiency of the device.